TW202410195A - 半導體裝置的製造方法 - Google Patents

半導體裝置的製造方法 Download PDF

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Publication number
TW202410195A
TW202410195A TW112121991A TW112121991A TW202410195A TW 202410195 A TW202410195 A TW 202410195A TW 112121991 A TW112121991 A TW 112121991A TW 112121991 A TW112121991 A TW 112121991A TW 202410195 A TW202410195 A TW 202410195A
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TW
Taiwan
Prior art keywords
insulator
conductor
oxide
addition
transistor
Prior art date
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TW112121991A
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English (en)
Chinese (zh)
Inventor
山崎舜平
遠藤俊弥
方堂涼太
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日商半導體能源研究所股份有限公司
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Publication of TW202410195A publication Critical patent/TW202410195A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H10P14/6339—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/038—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers covering conductive structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/0698—Local interconnections

Landscapes

  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
TW112121991A 2022-06-20 2023-06-13 半導體裝置的製造方法 TW202410195A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022098829 2022-06-20
JP2022-098829 2022-06-20

Publications (1)

Publication Number Publication Date
TW202410195A true TW202410195A (zh) 2024-03-01

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ID=89169390

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112121991A TW202410195A (zh) 2022-06-20 2023-06-13 半導體裝置的製造方法

Country Status (5)

Country Link
US (1) US12581747B2 (https=)
JP (1) JP2024000519A (https=)
KR (1) KR20230174174A (https=)
CN (1) CN117276190A (https=)
TW (1) TW202410195A (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12581747B2 (en) * 2022-06-20 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2026009123A1 (ja) * 2024-07-05 2026-01-08 株式会社半導体エネルギー研究所 半導体装置、半導体装置の作製方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060197092A1 (en) * 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
TWI770659B (zh) * 2008-07-31 2022-07-11 日商半導體能源研究所股份有限公司 半導體裝置及半導體裝置的製造方法
US9666719B2 (en) * 2008-07-31 2017-05-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8344387B2 (en) * 2008-11-28 2013-01-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP5564331B2 (ja) * 2009-05-29 2014-07-30 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2011068028A1 (en) * 2009-12-04 2011-06-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element, semiconductor device, and method for manufacturing the same
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101809105B1 (ko) 2010-08-06 2017-12-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 집적 회로
CN113793872A (zh) * 2014-12-10 2021-12-14 株式会社半导体能源研究所 半导体装置及其制造方法
KR102865410B1 (ko) 2015-02-06 2025-09-26 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9882061B2 (en) * 2015-03-17 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP6887243B2 (ja) * 2015-12-11 2021-06-16 株式会社半導体エネルギー研究所 トランジスタ、半導体装置、電子機器及び半導ウエハ
JPWO2018215878A1 (ja) * 2017-05-26 2020-03-26 株式会社半導体エネルギー研究所 半導体装置、および半導体装置の作製方法
US11088286B2 (en) * 2017-09-15 2021-08-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR102668377B1 (ko) * 2017-12-08 2024-05-27 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11133420B2 (en) * 2017-12-27 2021-09-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
JP7186732B2 (ja) 2018-02-08 2022-12-09 株式会社半導体エネルギー研究所 表示装置
KR102755187B1 (ko) * 2018-02-23 2025-01-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11245040B2 (en) * 2018-03-02 2022-02-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
KR20200127993A (ko) * 2018-03-07 2020-11-11 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
US11257960B2 (en) * 2018-03-29 2022-02-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US11508850B2 (en) * 2018-09-05 2022-11-22 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
TW202339171A (zh) * 2021-09-21 2023-10-01 日商半導體能源研究所股份有限公司 半導體裝置
TW202329333A (zh) * 2021-11-30 2023-07-16 日商半導體能源研究所股份有限公司 半導體裝置、半導體裝置的製造方法
CN119325749A (zh) * 2022-06-10 2025-01-17 株式会社半导体能源研究所 半导体装置、存储装置及半导体装置的制造方法
US12581747B2 (en) * 2022-06-20 2026-03-17 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device

Also Published As

Publication number Publication date
KR20230174174A (ko) 2023-12-27
US20230411500A1 (en) 2023-12-21
JP2024000519A (ja) 2024-01-05
CN117276190A (zh) 2023-12-22
US12581747B2 (en) 2026-03-17

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