TWI809100B - 半導體裝置、及半導體裝置的製造方法 - Google Patents

半導體裝置、及半導體裝置的製造方法 Download PDF

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Publication number
TWI809100B
TWI809100B TW108116298A TW108116298A TWI809100B TW I809100 B TWI809100 B TW I809100B TW 108116298 A TW108116298 A TW 108116298A TW 108116298 A TW108116298 A TW 108116298A TW I809100 B TWI809100 B TW I809100B
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TW
Taiwan
Prior art keywords
insulator
conductor
oxide
transistor
addition
Prior art date
Application number
TW108116298A
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English (en)
Chinese (zh)
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TW202005059A (zh
Inventor
山崎舜平
伊藤大吾
方堂涼太
安藤善範
掛端哲彌
Original Assignee
日商半導體能源研究所股份有限公司
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Publication of TW202005059A publication Critical patent/TW202005059A/zh
Application granted granted Critical
Publication of TWI809100B publication Critical patent/TWI809100B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Surgical Instruments (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
TW108116298A 2018-05-18 2019-05-10 半導體裝置、及半導體裝置的製造方法 TWI809100B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2018095917 2018-05-18
JP2018-095850 2018-05-18
JP2018095850 2018-05-18
JP2018-095917 2018-05-18

Publications (2)

Publication Number Publication Date
TW202005059A TW202005059A (zh) 2020-01-16
TWI809100B true TWI809100B (zh) 2023-07-21

Family

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Family Applications (1)

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TW108116298A TWI809100B (zh) 2018-05-18 2019-05-10 半導體裝置、及半導體裝置的製造方法

Country Status (4)

Country Link
US (1) US20210242207A1 (https=)
JP (1) JP7235418B2 (https=)
TW (1) TWI809100B (https=)
WO (1) WO2019220266A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734419B2 (en) 2018-10-31 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Imaging device with uniform photosensitive region array
US11721767B2 (en) 2020-06-29 2023-08-08 Taiwan Semiconductor Manufacturing Company Limited Oxide semiconductor transistor structure in 3-D device and methods of forming the same
KR20250022704A (ko) * 2022-06-10 2025-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 기억 장치, 및 반도체 장치의 제작 방법
WO2026028042A1 (ja) * 2024-08-01 2026-02-05 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011613A1 (en) * 2000-07-11 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20150187814A1 (en) * 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20170033111A1 (en) * 2015-07-29 2017-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Circuit Board, and Electronic Device
TW201742175A (zh) * 2016-04-08 2017-12-01 半導體能源硏究所股份有限公司 半導體裝置及半導體裝置的製造方法

Family Cites Families (11)

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Publication number Priority date Publication date Assignee Title
JP4190612B2 (ja) * 1998-04-09 2008-12-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4748967B2 (ja) * 2003-11-04 2011-08-17 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP6231735B2 (ja) * 2011-06-01 2017-11-15 株式会社半導体エネルギー研究所 半導体装置
US9190525B2 (en) * 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
WO2015060133A1 (en) * 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2015149414A (ja) 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
JP6545976B2 (ja) * 2014-03-07 2019-07-17 株式会社半導体エネルギー研究所 半導体装置
KR102373263B1 (ko) 2014-05-30 2022-03-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 제조하기 위한 방법
JP6853663B2 (ja) 2015-12-28 2021-03-31 株式会社半導体エネルギー研究所 半導体装置
US9905657B2 (en) 2016-01-20 2018-02-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020011613A1 (en) * 2000-07-11 2002-01-31 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US20150187814A1 (en) * 2013-12-26 2015-07-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US20170033111A1 (en) * 2015-07-29 2017-02-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Circuit Board, and Electronic Device
TW201742175A (zh) * 2016-04-08 2017-12-01 半導體能源硏究所股份有限公司 半導體裝置及半導體裝置的製造方法

Also Published As

Publication number Publication date
TW202005059A (zh) 2020-01-16
JP7235418B2 (ja) 2023-03-08
US20210242207A1 (en) 2021-08-05
WO2019220266A1 (ja) 2019-11-21
JPWO2019220266A1 (ja) 2021-06-10

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