JP7235418B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP7235418B2
JP7235418B2 JP2020519204A JP2020519204A JP7235418B2 JP 7235418 B2 JP7235418 B2 JP 7235418B2 JP 2020519204 A JP2020519204 A JP 2020519204A JP 2020519204 A JP2020519204 A JP 2020519204A JP 7235418 B2 JP7235418 B2 JP 7235418B2
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insulator
oxide
conductor
transistor
film
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Japanese (ja)
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JPWO2019220266A1 (ja
JPWO2019220266A5 (https=
Inventor
舜平 山崎
大吾 伊藤
涼太 方堂
善範 安藤
哲弥 掛端
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Surgical Instruments (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
JP2020519204A 2018-05-18 2019-05-08 半導体装置の作製方法 Active JP7235418B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2018095917 2018-05-18
JP2018095850 2018-05-18
JP2018095850 2018-05-18
JP2018095917 2018-05-18
PCT/IB2019/053757 WO2019220266A1 (ja) 2018-05-18 2019-05-08 半導体装置、および半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPWO2019220266A1 JPWO2019220266A1 (ja) 2021-06-10
JPWO2019220266A5 JPWO2019220266A5 (https=) 2022-05-13
JP7235418B2 true JP7235418B2 (ja) 2023-03-08

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JP2020519204A Active JP7235418B2 (ja) 2018-05-18 2019-05-08 半導体装置の作製方法

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US (1) US20210242207A1 (https=)
JP (1) JP7235418B2 (https=)
TW (1) TWI809100B (https=)
WO (1) WO2019220266A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10734419B2 (en) 2018-10-31 2020-08-04 Taiwan Semiconductor Manufacturing Co., Ltd. Imaging device with uniform photosensitive region array
US11721767B2 (en) 2020-06-29 2023-08-08 Taiwan Semiconductor Manufacturing Company Limited Oxide semiconductor transistor structure in 3-D device and methods of forming the same
KR20250022704A (ko) * 2022-06-10 2025-02-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치, 기억 장치, 및 반도체 장치의 제작 방법
WO2026028042A1 (ja) * 2024-08-01 2026-02-05 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159326A (ja) 2003-11-04 2005-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2013012730A (ja) 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015144271A (ja) 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2015149414A (ja) 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
JP2015188070A (ja) 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2016006871A (ja) 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017120904A (ja) 2015-12-28 2017-07-06 株式会社半導体エネルギー研究所 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法
JP2017130661A (ja) 2016-01-20 2017-07-27 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4190612B2 (ja) * 1998-04-09 2008-12-03 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3833903B2 (ja) * 2000-07-11 2006-10-18 株式会社東芝 半導体装置の製造方法
US9190525B2 (en) * 2012-07-06 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor layer
WO2015060133A1 (en) * 2013-10-22 2015-04-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10424671B2 (en) * 2015-07-29 2019-09-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, circuit board, and electronic device
WO2017175095A1 (en) * 2016-04-08 2017-10-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN109478514A (zh) * 2016-07-26 2019-03-15 株式会社半导体能源研究所 半导体装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005159326A (ja) 2003-11-04 2005-06-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP2013012730A (ja) 2011-06-01 2013-01-17 Semiconductor Energy Lab Co Ltd 半導体装置
JP2015144271A (ja) 2013-12-26 2015-08-06 株式会社半導体エネルギー研究所 半導体装置
JP2015149414A (ja) 2014-02-06 2015-08-20 株式会社東芝 半導体装置及び撮像装置
JP2015188070A (ja) 2014-03-07 2015-10-29 株式会社半導体エネルギー研究所 半導体装置
JP2016006871A (ja) 2014-05-30 2016-01-14 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP2017120904A (ja) 2015-12-28 2017-07-06 株式会社半導体エネルギー研究所 電極、半導体装置、半導体ウエハー、モジュールおよび電子機器とその作製方法
JP2017130661A (ja) 2016-01-20 2017-07-27 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法

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Publication number Publication date
TW202005059A (zh) 2020-01-16
TWI809100B (zh) 2023-07-21
US20210242207A1 (en) 2021-08-05
WO2019220266A1 (ja) 2019-11-21
JPWO2019220266A1 (ja) 2021-06-10

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