JPWO2023166378A1 - - Google Patents
Info
- Publication number
- JPWO2023166378A1 JPWO2023166378A1 JP2024504026A JP2024504026A JPWO2023166378A1 JP WO2023166378 A1 JPWO2023166378 A1 JP WO2023166378A1 JP 2024504026 A JP2024504026 A JP 2024504026A JP 2024504026 A JP2024504026 A JP 2024504026A JP WO2023166378 A1 JPWO2023166378 A1 JP WO2023166378A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/05—Making the transistor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022033577 | 2022-03-04 | ||
| PCT/IB2023/051550 WO2023166378A1 (ja) | 2022-03-04 | 2023-02-21 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2023166378A1 true JPWO2023166378A1 (https=) | 2023-09-07 |
| JPWO2023166378A5 JPWO2023166378A5 (https=) | 2026-01-19 |
Family
ID=87883161
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024504026A Pending JPWO2023166378A1 (https=) | 2022-03-04 | 2023-02-21 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20250185229A1 (https=) |
| JP (1) | JPWO2023166378A1 (https=) |
| CN (1) | CN118715619A (https=) |
| TW (1) | TW202339129A (https=) |
| WO (1) | WO2023166378A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12592275B2 (en) * | 2024-01-09 | 2026-03-31 | Macronix International Co., Ltd. | Memory structure and control method for reducing layout area of memory device |
| WO2025163445A1 (ja) * | 2024-01-31 | 2025-08-07 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100626036B1 (ko) * | 2004-11-17 | 2006-09-20 | 삼성에스디아이 주식회사 | 유기 발광 소자 및 상기 유기 발광 소자의 제조방법 |
| WO2012121265A1 (en) * | 2011-03-10 | 2012-09-13 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and method for manufacturing the same |
| TWI685113B (zh) * | 2015-02-11 | 2020-02-11 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| WO2018203181A1 (ja) * | 2017-05-01 | 2018-11-08 | 株式会社半導体エネルギー研究所 | 半導体装置 |
-
2023
- 2023-02-21 US US18/842,344 patent/US20250185229A1/en active Pending
- 2023-02-21 CN CN202380021941.0A patent/CN118715619A/zh active Pending
- 2023-02-21 JP JP2024504026A patent/JPWO2023166378A1/ja active Pending
- 2023-02-21 WO PCT/IB2023/051550 patent/WO2023166378A1/ja not_active Ceased
- 2023-02-23 TW TW112106784A patent/TW202339129A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| CN118715619A (zh) | 2024-09-27 |
| WO2023166378A1 (ja) | 2023-09-07 |
| TW202339129A (zh) | 2023-10-01 |
| US20250185229A1 (en) | 2025-06-05 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20260107 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20260107 |