TW202339129A - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TW202339129A
TW202339129A TW112106784A TW112106784A TW202339129A TW 202339129 A TW202339129 A TW 202339129A TW 112106784 A TW112106784 A TW 112106784A TW 112106784 A TW112106784 A TW 112106784A TW 202339129 A TW202339129 A TW 202339129A
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TW
Taiwan
Prior art keywords
conductor
transistor
insulator
semiconductor device
memory
Prior art date
Application number
TW112106784A
Other languages
English (en)
Chinese (zh)
Inventor
大貫達也
國武寛司
中島基
山崎舜平
Original Assignee
日商半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 日商半導體能源研究所股份有限公司 filed Critical 日商半導體能源研究所股份有限公司
Publication of TW202339129A publication Critical patent/TW202339129A/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW112106784A 2022-03-04 2023-02-23 半導體裝置 TW202339129A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-033577 2022-03-04
JP2022033577 2022-03-04

Publications (1)

Publication Number Publication Date
TW202339129A true TW202339129A (zh) 2023-10-01

Family

ID=87883161

Family Applications (1)

Application Number Title Priority Date Filing Date
TW112106784A TW202339129A (zh) 2022-03-04 2023-02-23 半導體裝置

Country Status (5)

Country Link
US (1) US20250185229A1 (https=)
JP (1) JPWO2023166378A1 (https=)
CN (1) CN118715619A (https=)
TW (1) TW202339129A (https=)
WO (1) WO2023166378A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12592275B2 (en) * 2024-01-09 2026-03-31 Macronix International Co., Ltd. Memory structure and control method for reducing layout area of memory device
WO2025163445A1 (ja) * 2024-01-31 2025-08-07 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100626036B1 (ko) * 2004-11-17 2006-09-20 삼성에스디아이 주식회사 유기 발광 소자 및 상기 유기 발광 소자의 제조방법
WO2012121265A1 (en) * 2011-03-10 2012-09-13 Semiconductor Energy Laboratory Co., Ltd. Memory device and method for manufacturing the same
TWI685113B (zh) * 2015-02-11 2020-02-11 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
WO2018203181A1 (ja) * 2017-05-01 2018-11-08 株式会社半導体エネルギー研究所 半導体装置

Also Published As

Publication number Publication date
CN118715619A (zh) 2024-09-27
WO2023166378A1 (ja) 2023-09-07
US20250185229A1 (en) 2025-06-05
JPWO2023166378A1 (https=) 2023-09-07

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