JPWO2022131186A5 - - Google Patents
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- Publication number
- JPWO2022131186A5 JPWO2022131186A5 JP2022569967A JP2022569967A JPWO2022131186A5 JP WO2022131186 A5 JPWO2022131186 A5 JP WO2022131186A5 JP 2022569967 A JP2022569967 A JP 2022569967A JP 2022569967 A JP2022569967 A JP 2022569967A JP WO2022131186 A5 JPWO2022131186 A5 JP WO2022131186A5
- Authority
- JP
- Japan
- Prior art keywords
- transition metal
- reducing agent
- treatment liquid
- containing treatment
- treating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000003638 chemical reducing agent Substances 0.000 claims 18
- 229910052723 transition metal Inorganic materials 0.000 claims 18
- 150000003624 transition metals Chemical class 0.000 claims 18
- 239000007788 liquid Substances 0.000 claims 14
- 239000004065 semiconductor Substances 0.000 claims 14
- 238000000034 method Methods 0.000 claims 13
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims 6
- 229910000314 transition metal oxide Inorganic materials 0.000 claims 6
- -1 oxyoxide ions Chemical class 0.000 claims 5
- 239000003513 alkali Substances 0.000 claims 4
- 239000000243 solution Substances 0.000 claims 4
- 150000008044 alkali metal hydroxides Chemical class 0.000 claims 3
- 239000012670 alkaline solution Substances 0.000 claims 3
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 3
- 229910021529 ammonia Inorganic materials 0.000 claims 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims 2
- LSNNMFCWUKXFEE-UHFFFAOYSA-N Sulfurous acid Chemical compound OS(O)=O LSNNMFCWUKXFEE-UHFFFAOYSA-N 0.000 claims 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 claims 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 2
- 239000002798 polar solvent Substances 0.000 claims 2
- 238000001039 wet etching Methods 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- 125000003158 alcohol group Chemical group 0.000 claims 1
- 229910052783 alkali metal Inorganic materials 0.000 claims 1
- 229910000288 alkali metal carbonate Inorganic materials 0.000 claims 1
- 150000008041 alkali metal carbonates Chemical class 0.000 claims 1
- 229910001860 alkaline earth metal hydroxide Inorganic materials 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 150000001875 compounds Chemical class 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims 1
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 238000004544 sputter deposition Methods 0.000 claims 1
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020210578 | 2020-12-18 | ||
| JP2020210578 | 2020-12-18 | ||
| JP2021067187 | 2021-04-12 | ||
| JP2021067187 | 2021-04-12 | ||
| PCT/JP2021/045736 WO2022131186A1 (ja) | 2020-12-18 | 2021-12-13 | 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022131186A1 JPWO2022131186A1 (https=) | 2022-06-23 |
| JPWO2022131186A5 true JPWO2022131186A5 (https=) | 2023-08-14 |
| JP7342288B2 JP7342288B2 (ja) | 2023-09-11 |
Family
ID=82057813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022569967A Active JP7342288B2 (ja) | 2020-12-18 | 2021-12-13 | 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20240087911A1 (https=) |
| JP (1) | JP7342288B2 (https=) |
| KR (1) | KR102658517B1 (https=) |
| TW (1) | TWI847080B (https=) |
| WO (1) | WO2022131186A1 (https=) |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH056876A (ja) * | 1991-06-27 | 1993-01-14 | Hitachi Ltd | エツチング方法および装置 |
| JP3395854B2 (ja) * | 1994-02-02 | 2003-04-14 | 日立化成工業株式会社 | 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法 |
| JP2824749B2 (ja) * | 1994-07-15 | 1998-11-18 | 石原産業株式会社 | 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子 |
| JP4151927B2 (ja) | 1998-12-14 | 2008-09-17 | 株式会社東芝 | 半導体基板の洗浄方法 |
| US6432826B1 (en) | 1999-11-29 | 2002-08-13 | Applied Materials, Inc. | Planarized Cu cleaning for reduced defects |
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3585437B2 (ja) * | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP3752161B2 (ja) | 2001-06-13 | 2006-03-08 | インターナショナル・ビジネス・マシーンズ・コーポレーション | プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法 |
| JP3542798B2 (ja) | 2002-08-21 | 2004-07-14 | カシオマイクロニクス株式会社 | 化学処理方法及び化学処理装置 |
| KR20050116739A (ko) * | 2004-06-08 | 2005-12-13 | 동부아남반도체 주식회사 | 기판 상의 금속막 스트립 방법 |
| WO2006137497A1 (ja) | 2005-06-24 | 2006-12-28 | Mitsubishi Gas Chemical Company, Inc. | メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法 |
| JP2011016975A (ja) | 2009-06-12 | 2011-01-27 | Asahi Kasei Corp | 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法 |
| KR102009250B1 (ko) * | 2011-09-09 | 2019-08-12 | 동우 화인켐 주식회사 | 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물 |
| CN102592983B (zh) | 2012-02-07 | 2014-04-09 | 中国科学院上海技术物理研究所 | Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法 |
| US20140154406A1 (en) * | 2012-11-30 | 2014-06-05 | Lam Research Corporation | Wet activation of ruthenium containing liner/barrier |
| JP5750496B2 (ja) * | 2013-12-11 | 2015-07-22 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
| JP6861566B2 (ja) | 2017-04-07 | 2021-04-21 | 東京エレクトロン株式会社 | 基板処理方法および基板処理装置 |
| CN111684570B (zh) | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| WO2019151001A1 (ja) * | 2018-02-05 | 2019-08-08 | 富士フイルム株式会社 | 基板の処理方法、半導体装置の製造方法、基板処理用キット |
| WO2020049955A1 (ja) * | 2018-09-06 | 2020-03-12 | 富士フイルム株式会社 | 薬液、基板の処理方法 |
| EP3933892A4 (en) | 2019-03-01 | 2022-11-09 | Central Glass Company, Limited | DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE |
-
2021
- 2021-12-13 JP JP2022569967A patent/JP7342288B2/ja active Active
- 2021-12-13 US US18/267,880 patent/US20240087911A1/en active Pending
- 2021-12-13 WO PCT/JP2021/045736 patent/WO2022131186A1/ja not_active Ceased
- 2021-12-13 KR KR1020237020584A patent/KR102658517B1/ko active Active
- 2021-12-16 TW TW110147147A patent/TWI847080B/zh active
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