KR102658517B1 - 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 - Google Patents

천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 Download PDF

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KR102658517B1
KR102658517B1 KR1020237020584A KR20237020584A KR102658517B1 KR 102658517 B1 KR102658517 B1 KR 102658517B1 KR 1020237020584 A KR1020237020584 A KR 1020237020584A KR 20237020584 A KR20237020584 A KR 20237020584A KR 102658517 B1 KR102658517 B1 KR 102658517B1
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transition metal
ruthenium
reducing agent
treatment liquid
acid
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KR20230105686A (ko
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고헤이 사이토
도모아키 사토
유키 깃카와
다카후미 시모다
다카유키 네기시
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가부시끼가이샤 도꾸야마
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H01L21/304—
    • H01L21/306—
    • H01L21/308—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
KR1020237020584A 2020-12-18 2021-12-13 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액 Active KR102658517B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020237020687A KR20230104741A (ko) 2020-12-18 2021-12-13 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2020-210578 2020-12-18
JP2020210578 2020-12-18
JPJP-P-2021-067187 2021-04-12
JP2021067187 2021-04-12
PCT/JP2021/045736 WO2022131186A1 (ja) 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液

Related Child Applications (1)

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KR1020237020687A Division KR20230104741A (ko) 2020-12-18 2021-12-13 천이 금속의 반도체의 처리 방법, 및 천이 금속 산화물의 환원제 함유 처리액

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KR20230105686A KR20230105686A (ko) 2023-07-11
KR102658517B1 true KR102658517B1 (ko) 2024-04-17

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US (1) US20240087911A1 (https=)
JP (1) JP7342288B2 (https=)
KR (1) KR102658517B1 (https=)
TW (1) TWI847080B (https=)
WO (1) WO2022131186A1 (https=)

Citations (1)

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Publication number Priority date Publication date Assignee Title
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法

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JP3395854B2 (ja) * 1994-02-02 2003-04-14 日立化成工業株式会社 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法
JP2824749B2 (ja) * 1994-07-15 1998-11-18 石原産業株式会社 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子
JP4151927B2 (ja) 1998-12-14 2008-09-17 株式会社東芝 半導体基板の洗浄方法
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP3752161B2 (ja) 2001-06-13 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP3542798B2 (ja) 2002-08-21 2004-07-14 カシオマイクロニクス株式会社 化学処理方法及び化学処理装置
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
WO2006137497A1 (ja) 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
KR102009250B1 (ko) * 2011-09-09 2019-08-12 동우 화인켐 주식회사 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물
CN102592983B (zh) 2012-02-07 2014-04-09 中国科学院上海技术物理研究所 Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法
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JP5750496B2 (ja) * 2013-12-11 2015-07-22 株式会社日立ハイテクノロジーズ プラズマ処理方法
JP6861566B2 (ja) 2017-04-07 2021-04-21 東京エレクトロン株式会社 基板処理方法および基板処理装置
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
WO2019151001A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 基板の処理方法、半導体装置の製造方法、基板処理用キット
EP3933892A4 (en) 2019-03-01 2022-11-09 Central Glass Company, Limited DRY ETCHING METHOD, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE AND ETCHING DEVICE

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US20240087911A1 (en) 2024-03-14
JP7342288B2 (ja) 2023-09-11
WO2022131186A1 (ja) 2022-06-23
TWI847080B (zh) 2024-07-01
TW202231925A (zh) 2022-08-16
JPWO2022131186A1 (https=) 2022-06-23
KR20230105686A (ko) 2023-07-11

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