TWI847080B - 過渡金屬的半導體之處理方法，及過渡金屬氧化物的含有還原劑之處理液 - Google Patents

過渡金屬的半導體之處理方法，及過渡金屬氧化物的含有還原劑之處理液 Download PDF

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Publication number
TWI847080B
TWI847080B TW110147147A TW110147147A TWI847080B TW I847080 B TWI847080 B TW I847080B TW 110147147 A TW110147147 A TW 110147147A TW 110147147 A TW110147147 A TW 110147147A TW I847080 B TWI847080 B TW I847080B
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TW
Taiwan
Prior art keywords
transition metal
ruthenium
reducing agent
acid
semiconductor
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TW110147147A
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English (en)
Chinese (zh)
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TW202231925A (zh
Inventor
齋藤康平
佐藤伴光
吉川由樹
下田享史
根岸貴幸
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日商德山股份有限公司
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Publication of TW202231925A publication Critical patent/TW202231925A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW110147147A 2020-12-18 2021-12-16 過渡金屬的半導體之處理方法，及過渡金屬氧化物的含有還原劑之處理液 TWI847080B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2020-210578 2020-12-18
JP2020210578 2020-12-18
JP2021-067187 2021-04-12
JP2021067187 2021-04-12

Publications (2)

Publication Number Publication Date
TW202231925A TW202231925A (zh) 2022-08-16
TWI847080B true TWI847080B (zh) 2024-07-01

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TW110147147A TWI847080B (zh) 2020-12-18 2021-12-16 過渡金屬的半導體之處理方法，及過渡金屬氧化物的含有還原劑之處理液

Country Status (5)

Country Link
US (1) US20240087911A1 (https=)
JP (1) JP7342288B2 (https=)
KR (1) KR102658517B1 (https=)
TW (1) TWI847080B (https=)
WO (1) WO2022131186A1 (https=)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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TW201936996A (zh) * 2018-02-05 2019-09-16 日商富士軟片股份有限公司 基板的處理方法、半導體裝置的製造方法、基板處理用套組

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JP2824749B2 (ja) * 1994-07-15 1998-11-18 石原産業株式会社 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子
JP4151927B2 (ja) 1998-12-14 2008-09-17 株式会社東芝 半導体基板の洗浄方法
US6432826B1 (en) 1999-11-29 2002-08-13 Applied Materials, Inc. Planarized Cu cleaning for reduced defects
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP3752161B2 (ja) 2001-06-13 2006-03-08 インターナショナル・ビジネス・マシーンズ・コーポレーション プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP3542798B2 (ja) 2002-08-21 2004-07-14 カシオマイクロニクス株式会社 化学処理方法及び化学処理装置
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
WO2006137497A1 (ja) 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
KR102009250B1 (ko) * 2011-09-09 2019-08-12 동우 화인켐 주식회사 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물
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CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
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TW201936996A (zh) * 2018-02-05 2019-09-16 日商富士軟片股份有限公司 基板的處理方法、半導體裝置的製造方法、基板處理用套組

Also Published As

Publication number Publication date
US20240087911A1 (en) 2024-03-14
JP7342288B2 (ja) 2023-09-11
WO2022131186A1 (ja) 2022-06-23
KR102658517B1 (ko) 2024-04-17
TW202231925A (zh) 2022-08-16
JPWO2022131186A1 (https=) 2022-06-23
KR20230105686A (ko) 2023-07-11

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