JP7342288B2 - 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 - Google Patents

遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 Download PDF

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Publication number
JP7342288B2
JP7342288B2 JP2022569967A JP2022569967A JP7342288B2 JP 7342288 B2 JP7342288 B2 JP 7342288B2 JP 2022569967 A JP2022569967 A JP 2022569967A JP 2022569967 A JP2022569967 A JP 2022569967A JP 7342288 B2 JP7342288 B2 JP 7342288B2
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transition metal
ruthenium
reducing agent
acid
solution
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JPWO2022131186A5 (https=
JPWO2022131186A1 (https=
Inventor
康平 齋藤
伴光 佐藤
由樹 吉川
享史 下田
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/69—Etching of wafers, substrates or parts of devices using masks for semiconductor materials
    • H10P50/691—Etching of wafers, substrates or parts of devices using masks for semiconductor materials for Group V materials or Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
JP2022569967A 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液 Active JP7342288B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020210578 2020-12-18
JP2020210578 2020-12-18
JP2021067187 2021-04-12
JP2021067187 2021-04-12
PCT/JP2021/045736 WO2022131186A1 (ja) 2020-12-18 2021-12-13 遷移金属の半導体の処理方法、および遷移金属酸化物の還元剤含有処理液

Publications (3)

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JPWO2022131186A1 JPWO2022131186A1 (https=) 2022-06-23
JPWO2022131186A5 JPWO2022131186A5 (https=) 2023-08-14
JP7342288B2 true JP7342288B2 (ja) 2023-09-11

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Country Link
US (1) US20240087911A1 (https=)
JP (1) JP7342288B2 (https=)
KR (1) KR102658517B1 (https=)
TW (1) TWI847080B (https=)
WO (1) WO2022131186A1 (https=)

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183015A (ja) 1998-12-14 2000-06-30 Toshiba Corp 半導体基板の洗浄方法及び洗浄装置
JP2001230230A (ja) 1999-11-29 2001-08-24 Applied Materials Inc 欠陥低減のための平坦化された銅のクリーニング
JP2003008199A (ja) 2001-06-13 2003-01-10 Internatl Business Mach Corp <Ibm> プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP2004137594A (ja) 2002-08-21 2004-05-13 Casio Micronics Co Ltd 化学処理方法及び化学処理装置
WO2006137497A1 (ja) 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
CN102592983A (zh) 2012-02-07 2012-07-18 中国科学院上海技术物理研究所 Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法
JP2014053644A (ja) 2013-12-11 2014-03-20 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2018181984A (ja) 2017-04-07 2018-11-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020179449A1 (ja) 2019-03-01 2020-09-10 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH056876A (ja) * 1991-06-27 1993-01-14 Hitachi Ltd エツチング方法および装置
JP3395854B2 (ja) * 1994-02-02 2003-04-14 日立化成工業株式会社 酸化銅の化学還元液およびこれを用いた多層プリント配線板の製造方法
JP2824749B2 (ja) * 1994-07-15 1998-11-18 石原産業株式会社 表面改質された酸化チタン膜およびその製造方法ならびにそれを用いた光電変換素子
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) * 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
KR20050116739A (ko) * 2004-06-08 2005-12-13 동부아남반도체 주식회사 기판 상의 금속막 스트립 방법
KR102009250B1 (ko) * 2011-09-09 2019-08-12 동우 화인켐 주식회사 표시장치의 제조방법 및 이에 이용되는 구리계 금속막/금속 산화물막의 식각액 조성물
US20140154406A1 (en) * 2012-11-30 2014-06-05 Lam Research Corporation Wet activation of ruthenium containing liner/barrier
WO2019151001A1 (ja) * 2018-02-05 2019-08-08 富士フイルム株式会社 基板の処理方法、半導体装置の製造方法、基板処理用キット
WO2020049955A1 (ja) * 2018-09-06 2020-03-12 富士フイルム株式会社 薬液、基板の処理方法

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000183015A (ja) 1998-12-14 2000-06-30 Toshiba Corp 半導体基板の洗浄方法及び洗浄装置
JP2001230230A (ja) 1999-11-29 2001-08-24 Applied Materials Inc 欠陥低減のための平坦化された銅のクリーニング
JP2003008199A (ja) 2001-06-13 2003-01-10 Internatl Business Mach Corp <Ibm> プリント配線基板の銅表面粗化方法ならびにプリント配線基板およびその製造方法
JP2004137594A (ja) 2002-08-21 2004-05-13 Casio Micronics Co Ltd 化学処理方法及び化学処理装置
WO2006137497A1 (ja) 2005-06-24 2006-12-28 Mitsubishi Gas Chemical Company, Inc. メタル材料用エッチング剤組成物およびそれを用いた半導体デバイスの製造方法
JP2011016975A (ja) 2009-06-12 2011-01-27 Asahi Kasei Corp 酸化銅用エッチング液及びそれを用いた酸化銅用エッチング方法
CN102592983A (zh) 2012-02-07 2012-07-18 中国科学院上海技术物理研究所 Mn-Co-Ni-O热敏薄膜的湿法刻蚀方法
JP2014053644A (ja) 2013-12-11 2014-03-20 Hitachi High-Technologies Corp プラズマ処理装置およびプラズマ処理方法
JP2018181984A (ja) 2017-04-07 2018-11-15 東京エレクトロン株式会社 基板処理方法および基板処理装置
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液
WO2020179449A1 (ja) 2019-03-01 2020-09-10 セントラル硝子株式会社 ドライエッチング方法、半導体デバイスの製造方法及びエッチング装置

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Publication number Publication date
US20240087911A1 (en) 2024-03-14
WO2022131186A1 (ja) 2022-06-23
KR102658517B1 (ko) 2024-04-17
TWI847080B (zh) 2024-07-01
TW202231925A (zh) 2022-08-16
JPWO2022131186A1 (https=) 2022-06-23
KR20230105686A (ko) 2023-07-11

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