JP2022509816A5 - - Google Patents
Info
- Publication number
- JP2022509816A5 JP2022509816A5 JP2021529724A JP2021529724A JP2022509816A5 JP 2022509816 A5 JP2022509816 A5 JP 2022509816A5 JP 2021529724 A JP2021529724 A JP 2021529724A JP 2021529724 A JP2021529724 A JP 2021529724A JP 2022509816 A5 JP2022509816 A5 JP 2022509816A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- molybdenum
- substrate
- forming
- approximately
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862773999P | 2018-11-30 | 2018-11-30 | |
| US62/773,999 | 2018-11-30 | ||
| PCT/US2019/053778 WO2020112237A1 (en) | 2018-11-30 | 2019-09-30 | Methods of patterning metal layers |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2022509816A JP2022509816A (ja) | 2022-01-24 |
| JP2022509816A5 true JP2022509816A5 (https=) | 2022-10-12 |
| JP7507761B2 JP7507761B2 (ja) | 2024-06-28 |
Family
ID=70853119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021529724A Active JP7507761B2 (ja) | 2018-11-30 | 2019-09-30 | 金属層をパターニングする方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP3888120A4 (https=) |
| JP (1) | JP7507761B2 (https=) |
| KR (1) | KR102779927B1 (https=) |
| CN (1) | CN113169116A (https=) |
| TW (1) | TWI725619B (https=) |
| WO (1) | WO2020112237A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022179680A1 (en) * | 2021-02-24 | 2022-09-01 | Imec Vzw | A method for etching molybdenum |
| US12243769B2 (en) | 2022-05-03 | 2025-03-04 | Nanya Technology Corporation | Method for preparing semiconductor device structure using nitrogen-containing pattern |
| US20240038541A1 (en) * | 2022-07-27 | 2024-02-01 | Applied Materials, Inc. | Methods for removing molybdenum oxides from substrates |
| JP7821059B2 (ja) * | 2022-07-29 | 2026-02-26 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7812758B2 (ja) | 2022-07-29 | 2026-02-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JP7837241B2 (ja) * | 2022-07-29 | 2026-03-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
| JPWO2024048382A1 (https=) | 2022-08-31 | 2024-03-07 | ||
| US12543523B2 (en) | 2023-10-20 | 2026-02-03 | Applied Materials, Inc. | Chlorine-free removal of molybdenum oxides from substrates |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04111312A (ja) * | 1990-08-31 | 1992-04-13 | Mitsubishi Electric Corp | 微細加工装置及び方法 |
| US5350484A (en) * | 1992-09-08 | 1994-09-27 | Intel Corporation | Method for the anisotropic etching of metal films in the fabrication of interconnects |
| JPH0897214A (ja) * | 1994-09-29 | 1996-04-12 | Nec Corp | 半導体装置の製造方法 |
| JPH08232083A (ja) * | 1995-02-24 | 1996-09-10 | Fuji Electric Co Ltd | 表面弾性波デバイスの製造方法 |
| US5972235A (en) * | 1997-02-28 | 1999-10-26 | Candescent Technologies Corporation | Plasma etching using polycarbonate mask and low pressure-high density plasma |
| US8293430B2 (en) * | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
| KR20070017762A (ko) * | 2005-08-08 | 2007-02-13 | 엘지.필립스 엘시디 주식회사 | 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법 |
| TWM286071U (en) * | 2005-10-26 | 2006-01-21 | Yun-Huei Wang | Improved structure for distillation wine making machine |
| US20100320457A1 (en) | 2007-11-22 | 2010-12-23 | Masahito Matsubara | Etching solution composition |
| TWI358467B (en) * | 2007-12-07 | 2012-02-21 | Nanya Technology Corp | Etchant for metal alloy having hafnium and molybde |
| JP2010056541A (ja) * | 2008-07-31 | 2010-03-11 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP2010165732A (ja) * | 2009-01-13 | 2010-07-29 | Hitachi Displays Ltd | エッチング液及びこれを用いたパターン形成方法並びに液晶表示装置の製造方法 |
| WO2016145337A1 (en) * | 2015-03-11 | 2016-09-15 | Exogenesis Corporation | Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby |
| US8557710B2 (en) * | 2011-09-01 | 2013-10-15 | Tel Epion Inc. | Gas cluster ion beam etching process for metal-containing materials |
| US20130335383A1 (en) * | 2012-06-19 | 2013-12-19 | Qualcomm Mems Technologies, Inc. | Removal of molybdenum |
| US9425062B2 (en) * | 2013-03-14 | 2016-08-23 | Applied Materials, Inc. | Method for improving CD micro-loading in photomask plasma etching |
| CN105522684B (zh) * | 2014-12-25 | 2018-11-09 | 比亚迪股份有限公司 | 一种金属-树脂复合体及其制备方法和一种电子产品外壳 |
| US9449843B1 (en) * | 2015-06-09 | 2016-09-20 | Applied Materials, Inc. | Selectively etching metals and metal nitrides conformally |
| JP7073710B2 (ja) * | 2017-01-20 | 2022-05-24 | 東京エレクトロン株式会社 | プラズマ処理装置 |
-
2019
- 2019-09-30 JP JP2021529724A patent/JP7507761B2/ja active Active
- 2019-09-30 KR KR1020217019714A patent/KR102779927B1/ko active Active
- 2019-09-30 EP EP19890099.5A patent/EP3888120A4/en active Pending
- 2019-09-30 WO PCT/US2019/053778 patent/WO2020112237A1/en not_active Ceased
- 2019-09-30 CN CN201980078544.0A patent/CN113169116A/zh active Pending
- 2019-11-14 TW TW108141301A patent/TWI725619B/zh not_active IP Right Cessation
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