EP3888120A4 - METHOD OF STRUCTURING METAL LAYERS - Google Patents

METHOD OF STRUCTURING METAL LAYERS Download PDF

Info

Publication number
EP3888120A4
EP3888120A4 EP19890099.5A EP19890099A EP3888120A4 EP 3888120 A4 EP3888120 A4 EP 3888120A4 EP 19890099 A EP19890099 A EP 19890099A EP 3888120 A4 EP3888120 A4 EP 3888120A4
Authority
EP
European Patent Office
Prior art keywords
methods
metallic layers
patterning metallic
patterning
layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19890099.5A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP3888120A1 (en
Inventor
Omkaram Nalamasu
Ludovic Godet
Yifei Wang
Jinxin FU
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of EP3888120A1 publication Critical patent/EP3888120A1/en
Publication of EP3888120A4 publication Critical patent/EP3888120A4/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/089—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts using processes for implementing desired shapes or dispositions of the openings, e.g. double patterning
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour
    • H10P14/6514—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour by exposure to a plasma
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/262—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by physical means only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/035—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/054—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by selectively removing parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/063—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material
    • H10W20/0633—Manufacture or treatment of conductive parts of the interconnections by forming conductive members before forming protective insulating material using subtractive patterning of the conductive members
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
    • H10W20/084—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures
    • H10W20/087—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts for dual-damascene structures involving multiple stacked pre-patterned masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/095—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by irradiating with electromagnetic or particle radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/093—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts
    • H10W20/097—Manufacture or treatment of dielectric parts thereof by modifying materials of the dielectric parts by thermally treating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4437—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal
    • H10W20/4441—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a transition metal the principal metal being a refractory metal
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6302—Non-deposition formation processes
    • H10P14/6304—Formation by oxidation, e.g. oxidation of the substrate
    • H10P14/6314—Formation by oxidation, e.g. oxidation of the substrate of a metallic layer
EP19890099.5A 2018-11-30 2019-09-30 METHOD OF STRUCTURING METAL LAYERS Pending EP3888120A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201862773999P 2018-11-30 2018-11-30
PCT/US2019/053778 WO2020112237A1 (en) 2018-11-30 2019-09-30 Methods of patterning metal layers

Publications (2)

Publication Number Publication Date
EP3888120A1 EP3888120A1 (en) 2021-10-06
EP3888120A4 true EP3888120A4 (en) 2022-11-02

Family

ID=70853119

Family Applications (1)

Application Number Title Priority Date Filing Date
EP19890099.5A Pending EP3888120A4 (en) 2018-11-30 2019-09-30 METHOD OF STRUCTURING METAL LAYERS

Country Status (6)

Country Link
EP (1) EP3888120A4 (https=)
JP (1) JP7507761B2 (https=)
KR (1) KR102779927B1 (https=)
CN (1) CN113169116A (https=)
TW (1) TWI725619B (https=)
WO (1) WO2020112237A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022179680A1 (en) * 2021-02-24 2022-09-01 Imec Vzw A method for etching molybdenum
US12243769B2 (en) 2022-05-03 2025-03-04 Nanya Technology Corporation Method for preparing semiconductor device structure using nitrogen-containing pattern
US20240038541A1 (en) * 2022-07-27 2024-02-01 Applied Materials, Inc. Methods for removing molybdenum oxides from substrates
JP7821059B2 (ja) * 2022-07-29 2026-02-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7812758B2 (ja) 2022-07-29 2026-02-10 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JP7837241B2 (ja) * 2022-07-29 2026-03-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置
JPWO2024048382A1 (https=) 2022-08-31 2024-03-07
US12543523B2 (en) 2023-10-20 2026-02-03 Applied Materials, Inc. Chlorine-free removal of molybdenum oxides from substrates

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4128780A1 (de) * 1990-08-31 1992-03-05 Mitsubishi Electric Corp Vorrichtung und verfahren zum bilden einer feinstruktur
US5350484A (en) * 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US20100320457A1 (en) * 2007-11-22 2010-12-23 Masahito Matsubara Etching solution composition
US20130059444A1 (en) * 2011-09-01 2013-03-07 Tel Epion, Inc. Gas cluster ion beam etching process for metal-containing materials
US9449843B1 (en) * 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0897214A (ja) * 1994-09-29 1996-04-12 Nec Corp 半導体装置の製造方法
JPH08232083A (ja) * 1995-02-24 1996-09-10 Fuji Electric Co Ltd 表面弾性波デバイスの製造方法
US5972235A (en) * 1997-02-28 1999-10-26 Candescent Technologies Corporation Plasma etching using polycarbonate mask and low pressure-high density plasma
US8293430B2 (en) * 2005-01-27 2012-10-23 Applied Materials, Inc. Method for etching a molybdenum layer suitable for photomask fabrication
KR20070017762A (ko) * 2005-08-08 2007-02-13 엘지.필립스 엘시디 주식회사 식각액 조성물, 이를 이용한 도전막의 패터닝 방법 및평판표시장치의 제조 방법
TWM286071U (en) * 2005-10-26 2006-01-21 Yun-Huei Wang Improved structure for distillation wine making machine
TWI358467B (en) * 2007-12-07 2012-02-21 Nanya Technology Corp Etchant for metal alloy having hafnium and molybde
JP2010056541A (ja) * 2008-07-31 2010-03-11 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
JP2010165732A (ja) * 2009-01-13 2010-07-29 Hitachi Displays Ltd エッチング液及びこれを用いたパターン形成方法並びに液晶表示装置の製造方法
WO2016145337A1 (en) * 2015-03-11 2016-09-15 Exogenesis Corporation Method for neutral beam processing based on gas cluster ion beam technology and articles produced thereby
US20130335383A1 (en) * 2012-06-19 2013-12-19 Qualcomm Mems Technologies, Inc. Removal of molybdenum
US9425062B2 (en) * 2013-03-14 2016-08-23 Applied Materials, Inc. Method for improving CD micro-loading in photomask plasma etching
CN105522684B (zh) * 2014-12-25 2018-11-09 比亚迪股份有限公司 一种金属-树脂复合体及其制备方法和一种电子产品外壳
JP7073710B2 (ja) * 2017-01-20 2022-05-24 東京エレクトロン株式会社 プラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4128780A1 (de) * 1990-08-31 1992-03-05 Mitsubishi Electric Corp Vorrichtung und verfahren zum bilden einer feinstruktur
US5350484A (en) * 1992-09-08 1994-09-27 Intel Corporation Method for the anisotropic etching of metal films in the fabrication of interconnects
US20100320457A1 (en) * 2007-11-22 2010-12-23 Masahito Matsubara Etching solution composition
US20130059444A1 (en) * 2011-09-01 2013-03-07 Tel Epion, Inc. Gas cluster ion beam etching process for metal-containing materials
US9449843B1 (en) * 2015-06-09 2016-09-20 Applied Materials, Inc. Selectively etching metals and metal nitrides conformally

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
GU XUN ET AL: "A novel metallic complex reaction etching for transition metal and magnetic material by low-temperature and damage-free neutral beam process for non-volatile MRAM device applications", 2015 SYMPOSIUM ON VLSI TECHNOLOGY, IEEE, 9 June 2014 (2014-06-09), pages 1 - 2, XP032640237, ISSN: 0743-1562, [retrieved on 20140908], DOI: 10.1109/VLSIT.2014.6894362 *
See also references of WO2020112237A1 *

Also Published As

Publication number Publication date
EP3888120A1 (en) 2021-10-06
JP2022509816A (ja) 2022-01-24
WO2020112237A1 (en) 2020-06-04
KR102779927B1 (ko) 2025-03-10
KR20210087101A (ko) 2021-07-09
TWI725619B (zh) 2021-04-21
JP7507761B2 (ja) 2024-06-28
TW202025302A (zh) 2020-07-01
CN113169116A (zh) 2021-07-23

Similar Documents

Publication Publication Date Title
EP3888120A4 (en) METHOD OF STRUCTURING METAL LAYERS
EP3539147A4 (en) METHOD FOR SELF-ALIGNED STRUCTURING
EP3777605A4 (en) DECORATIVE ELEMENT
EP3808207A4 (en) Decoration member
EP3744518A4 (en) DECORATIVE FILM
EP3945970A4 (en) Creped single ply tissue
DOS2019000134S (es) Ornamentacion
EP3808555A4 (en) DECORATIVE ELEMENT
DOS2019000137S (es) Ornamentación
EP3849415C0 (en) OSCILLOMETRY DEVICE FOR PERSONAL USE
DOS2019000135S (es) Ornamentación
DOS2019000136S (es) Ornamentacion
DOS2019000133S (es) Ornamentación
DOS2019000138S (es) Ornamentacion
EP3785997A4 (en) DECORATIVE FILM
EP3578352C0 (en) EMBOSSING METHOD
PL3814572T3 (pl) Podkład
DOS2019000161S (es) Ornamentación
EP3648475A4 (en) ACOUSTIC ADAPTATION LAYER
EP3849804A4 (en) DECORATIVE LAMINATE
EP3807868A4 (en) CENTRALIZED RENDERING
EP3765294A4 (en) DECORATIVE SET
DK3520622T3 (da) Sukkerfri hård dragé
ITUA20163295A1 (it) Gruppo di formatura per linea profilatrice
HUE057290T2 (hu) Forma, különösen betonforma

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20210518

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/532 20060101ALI20220624BHEP

Ipc: H01L 21/768 20060101ALI20220624BHEP

Ipc: H01L 21/3213 20060101AFI20220624BHEP

A4 Supplementary search report drawn up and despatched

Effective date: 20221004

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 23/532 20060101ALI20220927BHEP

Ipc: H01L 21/768 20060101ALI20220927BHEP

Ipc: H01L 21/3213 20060101AFI20220927BHEP