JPWO2022064308A5 - - Google Patents

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JPWO2022064308A5
JPWO2022064308A5 JP2022551440A JP2022551440A JPWO2022064308A5 JP WO2022064308 A5 JPWO2022064308 A5 JP WO2022064308A5 JP 2022551440 A JP2022551440 A JP 2022551440A JP 2022551440 A JP2022551440 A JP 2022551440A JP WO2022064308 A5 JPWO2022064308 A5 JP WO2022064308A5
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Japan
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transistor
turned
binary data
memory cell
drain
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JP2022551440A
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JP7719087B2 (ja
JPWO2022064308A1 (https=
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Priority claimed from PCT/IB2021/058181 external-priority patent/WO2022064308A1/ja
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JP2022551440A 2020-09-22 2021-09-09 半導体装置の駆動方法 Active JP7719087B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025123748A JP2025146893A (ja) 2020-09-22 2025-07-24 半導体装置の駆動方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158038 2020-09-22
JP2020158038 2020-09-22
PCT/IB2021/058181 WO2022064308A1 (ja) 2020-09-22 2021-09-09 半導体装置の駆動方法

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JP2025123748A Division JP2025146893A (ja) 2020-09-22 2025-07-24 半導体装置の駆動方法

Publications (3)

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JPWO2022064308A1 JPWO2022064308A1 (https=) 2022-03-31
JPWO2022064308A5 true JPWO2022064308A5 (https=) 2024-09-17
JP7719087B2 JP7719087B2 (ja) 2025-08-05

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JP2022551440A Active JP7719087B2 (ja) 2020-09-22 2021-09-09 半導体装置の駆動方法
JP2025123748A Pending JP2025146893A (ja) 2020-09-22 2025-07-24 半導体装置の駆動方法

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US (1) US12437793B2 (https=)
JP (2) JP7719087B2 (https=)
KR (1) KR20230069128A (https=)
CN (1) CN116114018A (https=)
WO (1) WO2022064308A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018644A (zh) * 2020-09-06 2023-04-25 株式会社半导体能源研究所 半导体装置及电子设备
WO2024194725A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP3191550B2 (ja) 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP2692610B2 (ja) 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JPH08273373A (ja) 1995-03-30 1996-10-18 Yamaha Corp 半導体記憶装置とその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
JP4114659B2 (ja) * 2004-11-26 2008-07-09 セイコーエプソン株式会社 強誘電体メモリ及びその駆動方法
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
JP2008135136A (ja) 2006-11-29 2008-06-12 Fujitsu Ltd 強誘電体メモリおよび強誘電体メモリの動作方法
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9685216B2 (en) * 2015-01-24 2017-06-20 Fudan University Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder
US11996131B2 (en) * 2022-01-04 2024-05-28 Ferroelectric Memory Gmbh Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

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