JP2022035884A5 - - Google Patents

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Publication number
JP2022035884A5
JP2022035884A5 JP2020140501A JP2020140501A JP2022035884A5 JP 2022035884 A5 JP2022035884 A5 JP 2022035884A5 JP 2020140501 A JP2020140501 A JP 2020140501A JP 2020140501 A JP2020140501 A JP 2020140501A JP 2022035884 A5 JP2022035884 A5 JP 2022035884A5
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JP
Japan
Prior art keywords
electrode
transistor
electrically connected
ferroelectric layer
gate
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JP2020140501A
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English (en)
Japanese (ja)
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JP2022035884A (ja
JP7638643B2 (ja
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Priority to JP2020140501A priority Critical patent/JP7638643B2/ja
Priority claimed from JP2020140501A external-priority patent/JP7638643B2/ja
Publication of JP2022035884A publication Critical patent/JP2022035884A/ja
Publication of JP2022035884A5 publication Critical patent/JP2022035884A5/ja
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JP2020140501A 2020-08-21 2020-08-21 半導体装置および電子機器 Active JP7638643B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2020140501A JP7638643B2 (ja) 2020-08-21 2020-08-21 半導体装置および電子機器

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020140501A JP7638643B2 (ja) 2020-08-21 2020-08-21 半導体装置および電子機器

Publications (3)

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JP2022035884A JP2022035884A (ja) 2022-03-04
JP2022035884A5 true JP2022035884A5 (https=) 2023-08-10
JP7638643B2 JP7638643B2 (ja) 2025-03-04

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JP2020140501A Active JP7638643B2 (ja) 2020-08-21 2020-08-21 半導体装置および電子機器

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JP (1) JP7638643B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202213766A (zh) 2020-09-22 2022-04-01 日商半導體能源研究所股份有限公司 鐵電體器件及半導體裝置
WO2026069097A1 (ja) * 2024-09-27 2026-04-02 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160324B2 (ja) * 1991-09-26 2001-04-25 ローム株式会社 半導体記憶素子
JP3319561B2 (ja) * 1996-03-01 2002-09-03 株式会社東芝 液晶表示装置
JP3503468B2 (ja) * 1998-03-27 2004-03-08 日産自動車株式会社 論理回路
JP3606543B2 (ja) 1998-09-02 2005-01-05 ローム株式会社 強誘電体を用いた順序回路およびこれを用いた半導体装置
JP3644664B2 (ja) 1998-10-15 2005-05-11 ローム株式会社 強誘電体を用いた順序回路およびこれを用いた半導体装置
US20050094457A1 (en) 1999-06-10 2005-05-05 Symetrix Corporation Ferroelectric memory and method of operating same
JP3560949B2 (ja) 2001-11-19 2004-09-02 ローム株式会社 データ保持装置およびデータ保持装置を有する電子回路
JP3740577B2 (ja) 2001-12-20 2006-02-01 松下電器産業株式会社 負電位発生回路、負電位発生装置及びこれを用いた半導体装置
JP4001229B2 (ja) 2002-06-10 2007-10-31 シャープ株式会社 半導体集積回路および半導体モジュール
US11462538B2 (en) 2017-12-06 2022-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2019212793A (ja) 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置

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