JP2025178310A5 - - Google Patents

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Publication number
JP2025178310A5
JP2025178310A5 JP2025152725A JP2025152725A JP2025178310A5 JP 2025178310 A5 JP2025178310 A5 JP 2025178310A5 JP 2025152725 A JP2025152725 A JP 2025152725A JP 2025152725 A JP2025152725 A JP 2025152725A JP 2025178310 A5 JP2025178310 A5 JP 2025178310A5
Authority
JP
Japan
Prior art keywords
film
transistor
conductive film
region disposed
disposed above
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025152725A
Other languages
English (en)
Japanese (ja)
Other versions
JP2025178310A (ja
Filing date
Publication date
Priority claimed from JP2020568868A external-priority patent/JP7433250B2/ja
Application filed filed Critical
Publication of JP2025178310A publication Critical patent/JP2025178310A/ja
Publication of JP2025178310A5 publication Critical patent/JP2025178310A5/ja
Pending legal-status Critical Current

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JP2025152725A 2019-01-29 2025-09-12 記憶装置 Pending JP2025178310A (ja)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
JP2019013469 2019-01-29
JP2019013469 2019-01-29
JP2020568868A JP7433250B2 (ja) 2019-01-29 2019-11-22 記憶装置
PCT/IB2019/060053 WO2020157558A1 (ja) 2019-01-29 2019-11-22 記憶装置、半導体装置、および、電子機器
JP2024016208A JP7568878B2 (ja) 2019-01-29 2024-02-06 半導体装置
JP2024173977A JP7745059B2 (ja) 2019-01-29 2024-10-03 半導体装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2024173977A Division JP7745059B2 (ja) 2019-01-29 2024-10-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2025178310A JP2025178310A (ja) 2025-12-05
JP2025178310A5 true JP2025178310A5 (https=) 2026-01-29

Family

ID=71842398

Family Applications (4)

Application Number Title Priority Date Filing Date
JP2020568868A Active JP7433250B2 (ja) 2019-01-29 2019-11-22 記憶装置
JP2024016208A Active JP7568878B2 (ja) 2019-01-29 2024-02-06 半導体装置
JP2024173977A Active JP7745059B2 (ja) 2019-01-29 2024-10-03 半導体装置
JP2025152725A Pending JP2025178310A (ja) 2019-01-29 2025-09-12 記憶装置

Family Applications Before (3)

Application Number Title Priority Date Filing Date
JP2020568868A Active JP7433250B2 (ja) 2019-01-29 2019-11-22 記憶装置
JP2024016208A Active JP7568878B2 (ja) 2019-01-29 2024-02-06 半導体装置
JP2024173977A Active JP7745059B2 (ja) 2019-01-29 2024-10-03 半導体装置

Country Status (3)

Country Link
US (2) US12156396B2 (https=)
JP (4) JP7433250B2 (https=)
WO (1) WO2020157558A1 (https=)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016225613A (ja) * 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
KR102825621B1 (ko) * 2020-04-17 2025-06-25 양쯔 메모리 테크놀로지스 씨오., 엘티디. 메모리 장치
JP2022049604A (ja) * 2020-09-16 2022-03-29 キオクシア株式会社 半導体装置及び半導体記憶装置
CN112599528B (zh) * 2020-12-14 2022-07-12 武汉新芯集成电路制造有限公司 半导体器件及其制备方法
JP2022148858A (ja) * 2021-03-24 2022-10-06 キオクシア株式会社 半導体記憶装置
US11974422B2 (en) * 2021-11-04 2024-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device
CN114512490B (zh) * 2022-01-07 2024-12-10 长江先进存储产业创新中心有限责任公司 一种存储器及其制备方法
JP2024000929A (ja) * 2022-06-21 2024-01-09 キオクシア株式会社 半導体記憶装置
US12131794B2 (en) * 2022-08-23 2024-10-29 Micron Technology, Inc. Structures for word line multiplexing in three-dimensional memory arrays
WO2024213980A1 (ja) * 2023-04-14 2024-10-17 株式会社半導体エネルギー研究所 半導体装置
KR20250087926A (ko) * 2023-12-08 2025-06-17 삼성전자주식회사 메모리 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008140912A (ja) 2006-11-30 2008-06-19 Toshiba Corp 不揮発性半導体記憶装置
JP5398378B2 (ja) 2009-06-24 2014-01-29 株式会社東芝 半導体記憶装置及びその製造方法
KR101473684B1 (ko) 2009-12-25 2014-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
WO2012002186A1 (en) 2010-07-02 2012-01-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
TWI555128B (zh) 2010-08-06 2016-10-21 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
WO2012029638A1 (en) 2010-09-03 2012-03-08 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2013065638A (ja) 2011-09-15 2013-04-11 Elpida Memory Inc 半導体装置
US8981367B2 (en) 2011-12-01 2015-03-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8907392B2 (en) 2011-12-22 2014-12-09 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device including stacked sub memory cells
JP6773453B2 (ja) 2015-05-26 2020-10-21 株式会社半導体エネルギー研究所 記憶装置及び電子機器
JP2016225613A (ja) 2015-05-26 2016-12-28 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の駆動方法
KR102721654B1 (ko) 2016-03-11 2024-10-23 가부시키가이샤 한도오따이 에네루기 켄큐쇼 복합체 및 트랜지스터
KR20180055701A (ko) 2016-11-17 2018-05-25 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
JP2018201003A (ja) 2017-05-26 2018-12-20 株式会社半導体エネルギー研究所 半導体装置及び電子機器
US11450669B2 (en) * 2018-07-24 2022-09-20 Intel Corporation Stacked thin-film transistor based embedded dynamic random-access memory

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