JP7638643B2 - 半導体装置および電子機器 - Google Patents

半導体装置および電子機器 Download PDF

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Publication number
JP7638643B2
JP7638643B2 JP2020140501A JP2020140501A JP7638643B2 JP 7638643 B2 JP7638643 B2 JP 7638643B2 JP 2020140501 A JP2020140501 A JP 2020140501A JP 2020140501 A JP2020140501 A JP 2020140501A JP 7638643 B2 JP7638643 B2 JP 7638643B2
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transistor
oxide
insulator
conductor
gate
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JP2022035884A (ja
JP2022035884A5 (https=
Inventor
舜平 山崎
達也 大貫
寛司 國武
晴之 馬場
慎也 笹川
安弘 神保
隆徳 松嵜
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
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JP2020140501A 2020-08-21 2020-08-21 半導体装置および電子機器 Active JP7638643B2 (ja)

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JP2020140501A JP7638643B2 (ja) 2020-08-21 2020-08-21 半導体装置および電子機器

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JP2020140501A JP7638643B2 (ja) 2020-08-21 2020-08-21 半導体装置および電子機器

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JP2022035884A JP2022035884A (ja) 2022-03-04
JP2022035884A5 JP2022035884A5 (https=) 2023-08-10
JP7638643B2 true JP7638643B2 (ja) 2025-03-04

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202213766A (zh) 2020-09-22 2022-04-01 日商半導體能源研究所股份有限公司 鐵電體器件及半導體裝置
WO2026069097A1 (ja) * 2024-09-27 2026-04-02 株式会社半導体エネルギー研究所 半導体装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077986A (ja) 1998-09-02 2000-03-14 Rohm Co Ltd 強誘電体を用いた順序回路およびこれを用いた半導体装置
JP2000124776A (ja) 1998-10-15 2000-04-28 Rohm Co Ltd 強誘電体を用いた順序回路およびこれを用いた半導体装置
JP2003152506A (ja) 2001-11-19 2003-05-23 Rohm Co Ltd データ保持装置およびデータ保持装置を有する電子回路
WO2003054652A1 (en) 2001-12-20 2003-07-03 Matsushita Electric Industrial Co., Ltd. Potential generating circuit, potential generating apparatus, semiconductor device using the same, and driving method thereof
JP2004015670A (ja) 2002-06-10 2004-01-15 Sharp Corp 半導体集積回路および半導体モジュール
US20050094457A1 (en) 1999-06-10 2005-05-05 Symetrix Corporation Ferroelectric memory and method of operating same
WO2019111113A1 (ja) 2017-12-06 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2019212793A (ja) 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3160324B2 (ja) * 1991-09-26 2001-04-25 ローム株式会社 半導体記憶素子
JP3319561B2 (ja) * 1996-03-01 2002-09-03 株式会社東芝 液晶表示装置
JP3503468B2 (ja) * 1998-03-27 2004-03-08 日産自動車株式会社 論理回路

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077986A (ja) 1998-09-02 2000-03-14 Rohm Co Ltd 強誘電体を用いた順序回路およびこれを用いた半導体装置
JP2000124776A (ja) 1998-10-15 2000-04-28 Rohm Co Ltd 強誘電体を用いた順序回路およびこれを用いた半導体装置
US20050094457A1 (en) 1999-06-10 2005-05-05 Symetrix Corporation Ferroelectric memory and method of operating same
JP2003152506A (ja) 2001-11-19 2003-05-23 Rohm Co Ltd データ保持装置およびデータ保持装置を有する電子回路
WO2003054652A1 (en) 2001-12-20 2003-07-03 Matsushita Electric Industrial Co., Ltd. Potential generating circuit, potential generating apparatus, semiconductor device using the same, and driving method thereof
JP2004015670A (ja) 2002-06-10 2004-01-15 Sharp Corp 半導体集積回路および半導体モジュール
WO2019111113A1 (ja) 2017-12-06 2019-06-13 株式会社半導体エネルギー研究所 半導体装置
JP2019212793A (ja) 2018-06-06 2019-12-12 ソニー株式会社 強誘電記憶装置

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