JPWO2022084782A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2022084782A5
JPWO2022084782A5 JP2022557212A JP2022557212A JPWO2022084782A5 JP WO2022084782 A5 JPWO2022084782 A5 JP WO2022084782A5 JP 2022557212 A JP2022557212 A JP 2022557212A JP 2022557212 A JP2022557212 A JP 2022557212A JP WO2022084782 A5 JPWO2022084782 A5 JP WO2022084782A5
Authority
JP
Japan
Prior art keywords
transistor
electrically connected
always electrically
drain
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022557212A
Other languages
English (en)
Japanese (ja)
Other versions
JP7798781B2 (ja
JPWO2022084782A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/IB2021/059187 external-priority patent/WO2022084782A1/ja
Publication of JPWO2022084782A1 publication Critical patent/JPWO2022084782A1/ja
Publication of JPWO2022084782A5 publication Critical patent/JPWO2022084782A5/ja
Priority to JP2025281865A priority Critical patent/JP2026067874A/ja
Application granted granted Critical
Publication of JP7798781B2 publication Critical patent/JP7798781B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2022557212A 2020-10-20 2021-10-07 半導体装置、及び電子機器 Active JP7798781B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025281865A JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020176236 2020-10-20
JP2020176236 2020-10-20
JP2021034923 2021-03-05
JP2021034923 2021-03-05
PCT/IB2021/059187 WO2022084782A1 (ja) 2020-10-20 2021-10-07 半導体装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025281865A Division JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022084782A1 JPWO2022084782A1 (https=) 2022-04-28
JPWO2022084782A5 true JPWO2022084782A5 (https=) 2024-10-15
JP7798781B2 JP7798781B2 (ja) 2026-01-14

Family

ID=81290166

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022557212A Active JP7798781B2 (ja) 2020-10-20 2021-10-07 半導体装置、及び電子機器
JP2025281865A Pending JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025281865A Pending JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Country Status (3)

Country Link
US (1) US12610553B2 (https=)
JP (2) JP7798781B2 (https=)
WO (1) WO2022084782A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022064309A1 (ja) * 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12170519B2 (en) 2021-07-07 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12274068B2 (en) * 2022-05-09 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming ferroelectric memory device

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335489A (ja) 1997-05-28 1998-12-18 Nkk Corp 半導体メモリセル
JP2002109875A (ja) 2000-09-29 2002-04-12 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
US7839697B2 (en) 2006-12-21 2010-11-23 Panasonic Corporation Semiconductor memory device
JP2008176910A (ja) 2006-12-21 2008-07-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
JP6174899B2 (ja) 2012-05-11 2017-08-02 株式会社半導体エネルギー研究所 半導体装置
WO2015141625A1 (ja) * 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置
JP2019194931A (ja) 2018-05-01 2019-11-07 ローム株式会社 半導体記憶装置
JP2019201034A (ja) 2018-05-14 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器
US11289145B2 (en) * 2020-01-10 2022-03-29 Ferroelectric Memory Gmbh Memory cell, memory cell arrangement, and methods thereof
WO2022064309A1 (ja) 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2022064303A1 (ja) 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN116097358A (zh) 2020-09-25 2023-05-09 株式会社半导体能源研究所 半导体装置及电子设备
US11688457B2 (en) * 2020-12-26 2023-06-27 International Business Machines Corporation Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing
US11996131B2 (en) * 2022-01-04 2024-05-28 Ferroelectric Memory Gmbh Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

Similar Documents

Publication Publication Date Title
JPWO2022084782A5 (https=)
JP2016212944A5 (ja) 半導体装置、及び電子部品
JP2026004368A5 (https=)
JP2003167543A5 (https=)
JP2017121046A5 (https=)
JP2022051730A5 (https=)
JP2018085508A5 (ja) 半導体装置
JP2017041635A5 (https=)
JP2018124977A5 (ja) 半導体装置
JP2013153169A5 (https=)
JPWO2022013676A5 (https=)
JP2016072982A5 (ja) ロジック回路
JP2013168210A5 (ja) 半導体装置、表示装置及び電子機器
JPWO2022064303A5 (https=)
JP2010097606A5 (ja) 半導体装置
JP2010152347A5 (ja) 半導体装置
JP2009032387A5 (https=)
JP2022176166A5 (https=)
JP2025142080A5 (ja) 表示装置
JP2025133840A5 (ja) 半導体装置
JP2013225117A5 (ja) 半導体装置、表示モジュール、及び電子機器
JP2013242573A5 (ja) 半導体装置、表示装置及び電子機器
JP2013047805A5 (ja) 半導体装置、表示装置及び電子機器
JPWO2021038349A5 (https=)
JP2024107145A5 (https=)