JPWO2022084782A1 - - Google Patents
Info
- Publication number
- JPWO2022084782A1 JPWO2022084782A1 JP2022557212A JP2022557212A JPWO2022084782A1 JP WO2022084782 A1 JPWO2022084782 A1 JP WO2022084782A1 JP 2022557212 A JP2022557212 A JP 2022557212A JP 2022557212 A JP2022557212 A JP 2022557212A JP WO2022084782 A1 JPWO2022084782 A1 JP WO2022084782A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
- H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
- G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
- G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/68—Capacitors having no potential barriers
- H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025281865A JP2026067874A (ja) | 2020-10-20 | 2025-12-25 | 半導体装置 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020176236 | 2020-10-20 | ||
| JP2020176236 | 2020-10-20 | ||
| JP2021034923 | 2021-03-05 | ||
| JP2021034923 | 2021-03-05 | ||
| PCT/IB2021/059187 WO2022084782A1 (ja) | 2020-10-20 | 2021-10-07 | 半導体装置、及び電子機器 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025281865A Division JP2026067874A (ja) | 2020-10-20 | 2025-12-25 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022084782A1 true JPWO2022084782A1 (https=) | 2022-04-28 |
| JPWO2022084782A5 JPWO2022084782A5 (https=) | 2024-10-15 |
| JP7798781B2 JP7798781B2 (ja) | 2026-01-14 |
Family
ID=81290166
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022557212A Active JP7798781B2 (ja) | 2020-10-20 | 2021-10-07 | 半導体装置、及び電子機器 |
| JP2025281865A Pending JP2026067874A (ja) | 2020-10-20 | 2025-12-25 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025281865A Pending JP2026067874A (ja) | 2020-10-20 | 2025-12-25 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US12610553B2 (https=) |
| JP (2) | JP7798781B2 (https=) |
| WO (1) | WO2022084782A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022064309A1 (ja) * | 2020-09-22 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US12170519B2 (en) | 2021-07-07 | 2024-12-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US12274068B2 (en) * | 2022-05-09 | 2025-04-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming ferroelectric memory device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335489A (ja) * | 1997-05-28 | 1998-12-18 | Nkk Corp | 半導体メモリセル |
| JP2002109875A (ja) * | 2000-09-29 | 2002-04-12 | Nec Corp | 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法 |
| JP2008176910A (ja) * | 2006-12-21 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
| JP2019194931A (ja) * | 2018-05-01 | 2019-11-07 | ローム株式会社 | 半導体記憶装置 |
| JP2019201034A (ja) * | 2018-05-14 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3960030B2 (ja) | 2001-12-11 | 2007-08-15 | 富士通株式会社 | 強誘電体メモリ |
| US7839697B2 (en) | 2006-12-21 | 2010-11-23 | Panasonic Corporation | Semiconductor memory device |
| JP5190275B2 (ja) | 2008-01-09 | 2013-04-24 | パナソニック株式会社 | 半導体メモリセル及びそれを用いた半導体メモリアレイ |
| JP6174899B2 (ja) | 2012-05-11 | 2017-08-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US11289145B2 (en) * | 2020-01-10 | 2022-03-29 | Ferroelectric Memory Gmbh | Memory cell, memory cell arrangement, and methods thereof |
| WO2022064309A1 (ja) | 2020-09-22 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| WO2022064303A1 (ja) | 2020-09-22 | 2022-03-31 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| CN116097358A (zh) | 2020-09-25 | 2023-05-09 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| US11688457B2 (en) * | 2020-12-26 | 2023-06-27 | International Business Machines Corporation | Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing |
| US11996131B2 (en) * | 2022-01-04 | 2024-05-28 | Ferroelectric Memory Gmbh | Preconditioning operation for a memory cell with a spontaneously-polarizable memory element |
-
2021
- 2021-10-07 WO PCT/IB2021/059187 patent/WO2022084782A1/ja not_active Ceased
- 2021-10-07 US US18/031,421 patent/US12610553B2/en active Active
- 2021-10-07 JP JP2022557212A patent/JP7798781B2/ja active Active
-
2025
- 2025-12-25 JP JP2025281865A patent/JP2026067874A/ja active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10335489A (ja) * | 1997-05-28 | 1998-12-18 | Nkk Corp | 半導体メモリセル |
| JP2002109875A (ja) * | 2000-09-29 | 2002-04-12 | Nec Corp | 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法 |
| JP2008176910A (ja) * | 2006-12-21 | 2008-07-31 | Matsushita Electric Ind Co Ltd | 半導体記憶装置 |
| WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
| JP2019194931A (ja) * | 2018-05-01 | 2019-11-07 | ローム株式会社 | 半導体記憶装置 |
| JP2019201034A (ja) * | 2018-05-14 | 2019-11-21 | ソニーセミコンダクタソリューションズ株式会社 | 半導体装置及び電子機器 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7798781B2 (ja) | 2026-01-14 |
| US20230380175A1 (en) | 2023-11-23 |
| JP2026067874A (ja) | 2026-04-21 |
| WO2022084782A1 (ja) | 2022-04-28 |
| US12610553B2 (en) | 2026-04-21 |
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