JPWO2022064315A1 - - Google Patents
Info
- Publication number
- JPWO2022064315A1 JPWO2022064315A1 JP2022551443A JP2022551443A JPWO2022064315A1 JP WO2022064315 A1 JPWO2022064315 A1 JP WO2022064315A1 JP 2022551443 A JP2022551443 A JP 2022551443A JP 2022551443 A JP2022551443 A JP 2022551443A JP WO2022064315 A1 JPWO2022064315 A1 JP WO2022064315A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/08—Control thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
- G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020161173 | 2020-09-25 | ||
| JP2020161173 | 2020-09-25 | ||
| PCT/IB2021/058288 WO2022064315A1 (ja) | 2020-09-25 | 2021-09-13 | 半導体装置、及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064315A1 true JPWO2022064315A1 (https=) | 2022-03-31 |
| JPWO2022064315A5 JPWO2022064315A5 (https=) | 2024-09-24 |
| JP7727648B2 JP7727648B2 (ja) | 2025-08-21 |
Family
ID=80846277
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551443A Active JP7727648B2 (ja) | 2020-09-25 | 2021-09-13 | 半導体装置、及び電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12400693B2 (https=) |
| JP (1) | JP7727648B2 (https=) |
| KR (1) | KR20230071154A (https=) |
| CN (1) | CN116097358A (https=) |
| WO (1) | WO2022064315A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20230070233A (ko) * | 2020-09-22 | 2023-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| WO2022084782A1 (ja) | 2020-10-20 | 2022-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| CN120165774B (zh) * | 2025-05-19 | 2025-08-19 | 成都新易盛通信技术股份有限公司 | 一种评估线性光模块频率响应特性的方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
| WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2788290B2 (ja) | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ |
| JP2788265B2 (ja) | 1988-07-08 | 1998-08-20 | オリンパス光学工業株式会社 | 強誘電体メモリ及びその駆動方法，製造方法 |
| US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| JP3188179B2 (ja) | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
| JPH09161473A (ja) | 1995-12-11 | 1997-06-20 | Fujitsu Ltd | 強誘電体メモリセル及びこれを用いた強誘電体メモリ |
| US5784310A (en) | 1997-03-03 | 1998-07-21 | Symetrix Corporation | Low imprint ferroelectric material for long retention memory and method of making the same |
| JP3960030B2 (ja) | 2001-12-11 | 2007-08-15 | 富士通株式会社 | 強誘電体メモリ |
| JP2003242771A (ja) | 2002-02-15 | 2003-08-29 | Toshiba Corp | 半導体記憶装置 |
| JP4256670B2 (ja) | 2002-12-10 | 2009-04-22 | 富士通株式会社 | 容量素子、半導体装置およびその製造方法 |
| JP3979947B2 (ja) | 2003-02-04 | 2007-09-19 | 三洋電機株式会社 | 強誘電体メモリ |
| JP2005183841A (ja) | 2003-12-22 | 2005-07-07 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP4652087B2 (ja) | 2004-03-11 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP5190275B2 (ja) | 2008-01-09 | 2013-04-24 | パナソニック株式会社 | 半導体メモリセル及びそれを用いた半導体メモリアレイ |
| JP5886496B2 (ja) | 2011-05-20 | 2016-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| US8891285B2 (en) | 2011-06-10 | 2014-11-18 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor memory device |
| US10319426B2 (en) * | 2017-05-09 | 2019-06-11 | Micron Technology, Inc. | Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods |
| US9934838B1 (en) * | 2017-05-10 | 2018-04-03 | International Business Machines Corporation | Pulse shaping unit cell and array for symmetric updating |
| US10755759B2 (en) * | 2018-06-28 | 2020-08-25 | International Business Machines Corporation | Symmetrically programmable resistive synapse for RPU using current-programmed single domain wall ferroelectric |
| US11360704B2 (en) * | 2018-12-21 | 2022-06-14 | Micron Technology, Inc. | Multiplexed signal development in a memory device |
| US11205467B2 (en) * | 2019-05-09 | 2021-12-21 | Namlab Ggmbh | Ferroelectric memory and logic cell and operation method |
| US11380708B2 (en) * | 2019-08-30 | 2022-07-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Analog non-volatile memory device using poly ferroelectric film with random polarization directions |
| WO2021112247A1 (ja) * | 2019-12-04 | 2021-06-10 | 国立大学法人東京工業大学 | 不揮発性記憶装置、不揮発性記憶素子及びその製造方法 |
-
2021
- 2021-09-13 WO PCT/IB2021/058288 patent/WO2022064315A1/ja not_active Ceased
- 2021-09-13 US US18/025,009 patent/US12400693B2/en active Active
- 2021-09-13 KR KR1020237012484A patent/KR20230071154A/ko active Pending
- 2021-09-13 CN CN202180062455.4A patent/CN116097358A/zh active Pending
- 2021-09-13 JP JP2022551443A patent/JP7727648B2/ja active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
| WO2015141625A1 (ja) * | 2014-03-17 | 2015-09-24 | 株式会社 東芝 | 不揮発性記憶装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022064315A1 (ja) | 2022-03-31 |
| JP7727648B2 (ja) | 2025-08-21 |
| CN116097358A (zh) | 2023-05-09 |
| US20230326503A1 (en) | 2023-10-12 |
| US12400693B2 (en) | 2025-08-26 |
| KR20230071154A (ko) | 2023-05-23 |
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