KR20230071154A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20230071154A
KR20230071154A KR1020237012484A KR20237012484A KR20230071154A KR 20230071154 A KR20230071154 A KR 20230071154A KR 1020237012484 A KR1020237012484 A KR 1020237012484A KR 20237012484 A KR20237012484 A KR 20237012484A KR 20230071154 A KR20230071154 A KR 20230071154A
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KR
South Korea
Prior art keywords
wiring
ftj
insulator
transistor
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237012484A
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English (en)
Korean (ko)
Inventor
슌페이 야마자키
šœ페이 야마자키
하지메 키무라
히데키 우오치
아츠시 미야구치
타츠노리 이노우에
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230071154A publication Critical patent/KR20230071154A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
KR1020237012484A 2020-09-25 2021-09-13 반도체 장치 및 전자 기기 Pending KR20230071154A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020161173 2020-09-25
JPJP-P-2020-161173 2020-09-25
PCT/IB2021/058288 WO2022064315A1 (ja) 2020-09-25 2021-09-13 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20230071154A true KR20230071154A (ko) 2023-05-23

Family

ID=80846277

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237012484A Pending KR20230071154A (ko) 2020-09-25 2021-09-13 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12400693B2 (https=)
JP (1) JP7727648B2 (https=)
KR (1) KR20230071154A (https=)
CN (1) CN116097358A (https=)
WO (1) WO2022064315A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230070233A (ko) * 2020-09-22 2023-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2022084782A1 (ja) 2020-10-20 2022-04-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN120165774B (zh) * 2025-05-19 2025-08-19 成都新易盛通信技术股份有限公司 一种评估线性光模块频率响应特性的方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003178577A (ja) 2001-12-11 2003-06-27 Fujitsu Ltd 強誘電体メモリ
JP2009164473A (ja) 2008-01-09 2009-07-23 Panasonic Corp 半導体メモリセル及びそれを用いた半導体メモリアレイ

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JP2788290B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JPH05347422A (ja) * 1992-06-16 1993-12-27 Fujitsu Ltd 二安定ダイオード
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JPH09161473A (ja) 1995-12-11 1997-06-20 Fujitsu Ltd 強誘電体メモリセル及びこれを用いた強誘電体メモリ
US5784310A (en) 1997-03-03 1998-07-21 Symetrix Corporation Low imprint ferroelectric material for long retention memory and method of making the same
JP2003242771A (ja) 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP3979947B2 (ja) 2003-02-04 2007-09-19 三洋電機株式会社 強誘電体メモリ
JP2005183841A (ja) 2003-12-22 2005-07-07 Fujitsu Ltd 半導体装置の製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
WO2015141625A1 (ja) * 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置
US10319426B2 (en) * 2017-05-09 2019-06-11 Micron Technology, Inc. Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
US9934838B1 (en) * 2017-05-10 2018-04-03 International Business Machines Corporation Pulse shaping unit cell and array for symmetric updating
US10755759B2 (en) * 2018-06-28 2020-08-25 International Business Machines Corporation Symmetrically programmable resistive synapse for RPU using current-programmed single domain wall ferroelectric
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US11205467B2 (en) * 2019-05-09 2021-12-21 Namlab Ggmbh Ferroelectric memory and logic cell and operation method
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WO2021112247A1 (ja) * 2019-12-04 2021-06-10 国立大学法人東京工業大学 不揮発性記憶装置、不揮発性記憶素子及びその製造方法

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Publication number Priority date Publication date Assignee Title
JP2003178577A (ja) 2001-12-11 2003-06-27 Fujitsu Ltd 強誘電体メモリ
JP2009164473A (ja) 2008-01-09 2009-07-23 Panasonic Corp 半導体メモリセル及びそれを用いた半導体メモリアレイ

Also Published As

Publication number Publication date
WO2022064315A1 (ja) 2022-03-31
JP7727648B2 (ja) 2025-08-21
CN116097358A (zh) 2023-05-09
US20230326503A1 (en) 2023-10-12
US12400693B2 (en) 2025-08-26
JPWO2022064315A1 (https=) 2022-03-31

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Patent event date: 20230412

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