JP7727648B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器

Info

Publication number
JP7727648B2
JP7727648B2 JP2022551443A JP2022551443A JP7727648B2 JP 7727648 B2 JP7727648 B2 JP 7727648B2 JP 2022551443 A JP2022551443 A JP 2022551443A JP 2022551443 A JP2022551443 A JP 2022551443A JP 7727648 B2 JP7727648 B2 JP 7727648B2
Authority
JP
Japan
Prior art keywords
ftj
wiring
insulator
potential
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022551443A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022064315A5 (https=
JPWO2022064315A1 (https=
Inventor
舜平 山崎
肇 木村
秀貴 魚地
厚 宮口
達則 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2022064315A1 publication Critical patent/JPWO2022064315A1/ja
Publication of JPWO2022064315A5 publication Critical patent/JPWO2022064315A5/ja
Application granted granted Critical
Publication of JP7727648B2 publication Critical patent/JP7727648B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/08—Control thereof
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
JP2022551443A 2020-09-25 2021-09-13 半導体装置、及び電子機器 Active JP7727648B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020161173 2020-09-25
JP2020161173 2020-09-25
PCT/IB2021/058288 WO2022064315A1 (ja) 2020-09-25 2021-09-13 半導体装置、及び電子機器

Publications (3)

Publication Number Publication Date
JPWO2022064315A1 JPWO2022064315A1 (https=) 2022-03-31
JPWO2022064315A5 JPWO2022064315A5 (https=) 2024-09-24
JP7727648B2 true JP7727648B2 (ja) 2025-08-21

Family

ID=80846277

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022551443A Active JP7727648B2 (ja) 2020-09-25 2021-09-13 半導体装置、及び電子機器

Country Status (5)

Country Link
US (1) US12400693B2 (https=)
JP (1) JP7727648B2 (https=)
KR (1) KR20230071154A (https=)
CN (1) CN116097358A (https=)
WO (1) WO2022064315A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20230070233A (ko) * 2020-09-22 2023-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2022084782A1 (ja) 2020-10-20 2022-04-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN120165774B (zh) * 2025-05-19 2025-08-19 成都新易盛通信技术股份有限公司 一种评估线性光模块频率响应特性的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015141625A1 (ja) 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2788290B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ
JP2788265B2 (ja) 1988-07-08 1998-08-20 オリンパス光学工業株式会社 強誘電体メモリ及びその駆動方法，製造方法
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JPH05347422A (ja) * 1992-06-16 1993-12-27 Fujitsu Ltd 二安定ダイオード
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JPH09161473A (ja) 1995-12-11 1997-06-20 Fujitsu Ltd 強誘電体メモリセル及びこれを用いた強誘電体メモリ
US5784310A (en) 1997-03-03 1998-07-21 Symetrix Corporation Low imprint ferroelectric material for long retention memory and method of making the same
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
JP2003242771A (ja) 2002-02-15 2003-08-29 Toshiba Corp 半導体記憶装置
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP3979947B2 (ja) 2003-02-04 2007-09-19 三洋電機株式会社 強誘電体メモリ
JP2005183841A (ja) 2003-12-22 2005-07-07 Fujitsu Ltd 半導体装置の製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
JP5886496B2 (ja) 2011-05-20 2016-03-16 株式会社半導体エネルギー研究所 半導体装置
US8891285B2 (en) 2011-06-10 2014-11-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor memory device
US10319426B2 (en) * 2017-05-09 2019-06-11 Micron Technology, Inc. Semiconductor structures, memory cells and devices comprising ferroelectric materials, systems including same, and related methods
US9934838B1 (en) * 2017-05-10 2018-04-03 International Business Machines Corporation Pulse shaping unit cell and array for symmetric updating
US10755759B2 (en) * 2018-06-28 2020-08-25 International Business Machines Corporation Symmetrically programmable resistive synapse for RPU using current-programmed single domain wall ferroelectric
US11360704B2 (en) * 2018-12-21 2022-06-14 Micron Technology, Inc. Multiplexed signal development in a memory device
US11205467B2 (en) * 2019-05-09 2021-12-21 Namlab Ggmbh Ferroelectric memory and logic cell and operation method
US11380708B2 (en) * 2019-08-30 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Analog non-volatile memory device using poly ferroelectric film with random polarization directions
WO2021112247A1 (ja) * 2019-12-04 2021-06-10 国立大学法人東京工業大学 不揮発性記憶装置、不揮発性記憶素子及びその製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015141625A1 (ja) 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置

Also Published As

Publication number Publication date
WO2022064315A1 (ja) 2022-03-31
CN116097358A (zh) 2023-05-09
US20230326503A1 (en) 2023-10-12
US12400693B2 (en) 2025-08-26
KR20230071154A (ko) 2023-05-23
JPWO2022064315A1 (https=) 2022-03-31

Similar Documents

Publication Publication Date Title
JP7725488B2 (ja) 半導体装置、及び電子機器
JP7514240B2 (ja) 記憶装置、半導体装置、及び電子機器
JP7727648B2 (ja) 半導体装置、及び電子機器
JP7702411B2 (ja) 半導体装置の駆動方法
JP7798781B2 (ja) 半導体装置、及び電子機器
JP2025146893A (ja) 半導体装置の駆動方法
JP2023010639A (ja) 半導体装置
JP2026031633A (ja) 半導体装置
JP7711071B2 (ja) 半導体装置、及び電子機器
JP2025156443A (ja) 半導体装置の駆動方法
JP7723677B2 (ja) 半導体装置、及び電子機器
JP7798787B2 (ja) 半導体装置
JP2026067874A (ja) 半導体装置
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
WO2023144653A1 (ja) 記憶装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240912

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240912

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250715

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250808

R150 Certificate of patent or registration of utility model

Ref document number: 7727648

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150