JPWO2022064303A1 - - Google Patents
Info
- Publication number
- JPWO2022064303A1 JPWO2022064303A1 JP2022551435A JP2022551435A JPWO2022064303A1 JP WO2022064303 A1 JPWO2022064303 A1 JP WO2022064303A1 JP 2022551435 A JP2022551435 A JP 2022551435A JP 2022551435 A JP2022551435 A JP 2022551435A JP WO2022064303 A1 JPWO2022064303 A1 JP WO2022064303A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Logic Circuits (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158053 | 2020-09-22 | ||
| JP2020158053 | 2020-09-22 | ||
| JP2021034922 | 2021-03-05 | ||
| JP2021034922 | 2021-03-05 | ||
| PCT/IB2021/058147 WO2022064303A1 (ja) | 2020-09-22 | 2021-09-08 | 半導体装置、及び電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064303A1 true JPWO2022064303A1 (https=) | 2022-03-31 |
| JPWO2022064303A5 JPWO2022064303A5 (https=) | 2024-09-17 |
| JP7725488B2 JP7725488B2 (ja) | 2025-08-19 |
Family
ID=80845034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551435A Active JP7725488B2 (ja) | 2020-09-22 | 2021-09-08 | 半導体装置、及び電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12354636B2 (https=) |
| JP (1) | JP7725488B2 (https=) |
| KR (1) | KR20230071139A (https=) |
| CN (1) | CN116114019A (https=) |
| WO (1) | WO2022064303A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116018644A (zh) * | 2020-09-06 | 2023-04-25 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| KR20230070233A (ko) * | 2020-09-22 | 2023-05-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| WO2022084782A1 (ja) | 2020-10-20 | 2022-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置、及び電子機器 |
| US12481867B2 (en) * | 2021-04-28 | 2025-11-25 | Arm Limited | Memory for artificial neural network accelerator |
| CN118401087A (zh) * | 2024-05-08 | 2024-07-26 | 洛玛瑞科技有限公司 | 一种铁电隧道结器件和存储单元 |
| CN119761127B (zh) * | 2024-12-20 | 2025-12-05 | 湖北江城实验室 | 半导体结构的设计方法、设计设备及计算机可读存储介质 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03108769A (ja) * | 1989-09-22 | 1991-05-08 | Olympus Optical Co Ltd | 強誘電体メモリ |
| JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
| JPH1069766A (ja) * | 1996-07-01 | 1998-03-10 | Texas Instr Inc <Ti> | メモリセル |
Family Cites Families (55)
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| US6013950A (en) * | 1994-05-19 | 2000-01-11 | Sandia Corporation | Semiconductor diode with external field modulation |
| US5532953A (en) * | 1995-03-29 | 1996-07-02 | Ramtron International Corporation | Ferroelectric memory sensing method using distinct read and write voltages |
| US5808929A (en) * | 1995-12-06 | 1998-09-15 | Sheikholeslami; Ali | Nonvolatile content addressable memory |
| JP2002299575A (ja) * | 2001-03-29 | 2002-10-11 | Toshiba Corp | 半導体記憶装置 |
| JP3960030B2 (ja) | 2001-12-11 | 2007-08-15 | 富士通株式会社 | 強誘電体メモリ |
| US6898104B2 (en) * | 2002-11-12 | 2005-05-24 | Kabushiki Kaisha Toshiba | Semiconductor device having semiconductor memory with sense amplifier |
| JP4177131B2 (ja) | 2003-02-06 | 2008-11-05 | ローム株式会社 | 論理演算回路、論理演算装置および論理演算方法 |
| JP4393980B2 (ja) | 2004-06-14 | 2010-01-06 | シャープ株式会社 | 表示装置 |
| US7499303B2 (en) * | 2004-09-24 | 2009-03-03 | Integrated Device Technology, Inc. | Binary and ternary non-volatile CAM |
| JP5067650B2 (ja) | 2006-01-06 | 2012-11-07 | 日本電気株式会社 | 半導体記憶装置 |
| JP5019223B2 (ja) * | 2007-11-21 | 2012-09-05 | 株式会社東芝 | 半導体記憶装置 |
| US7667997B2 (en) * | 2007-12-27 | 2010-02-23 | Texas Instruments Incorporated | Method to improve ferroelectronic memory performance and reliability |
| KR100929296B1 (ko) * | 2007-12-31 | 2009-11-27 | 주식회사 하이닉스반도체 | Ｒｆｉｄ 태그 장치 |
| JP5190275B2 (ja) | 2008-01-09 | 2013-04-24 | パナソニック株式会社 | 半導体メモリセル及びそれを用いた半導体メモリアレイ |
| JP2010033624A (ja) * | 2008-07-25 | 2010-02-12 | Toshiba Corp | 半導体記憶装置 |
| US8565000B2 (en) * | 2010-06-11 | 2013-10-22 | Radiant Technologies, Inc. | Variable impedance circuit controlled by a ferroelectric capacitor |
| US20120020140A1 (en) * | 2010-07-20 | 2012-01-26 | Industrial Technology Research Institute | Resistive memory cell and operation thereof, and resistive memory and operation and fabrication thereof |
| JP5833347B2 (ja) * | 2011-06-08 | 2015-12-16 | ローム株式会社 | データ処理装置 |
| US8756558B2 (en) * | 2012-03-30 | 2014-06-17 | Texas Instruments Incorporated | FRAM compiler and layout |
| JP2017108397A (ja) | 2015-11-30 | 2017-06-15 | 株式会社半導体エネルギー研究所 | 信号処理回路、及び該信号処理回路を有する半導体装置 |
| US9728259B1 (en) * | 2016-03-15 | 2017-08-08 | Qualcomm Technologies, Inc. | Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin |
| KR102382727B1 (ko) | 2016-03-18 | 2022-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 이를 사용한 시스템 |
| US9851914B2 (en) * | 2016-03-24 | 2017-12-26 | Texas Instruments Incorporated | Random number generation in ferroelectric random access memory (FRAM) |
| US20170344430A1 (en) * | 2016-05-24 | 2017-11-30 | Intel Corporation | Method and apparatus for data checkpointing and restoration in a storage device |
| KR102641557B1 (ko) | 2016-06-20 | 2024-02-28 | 소니그룹주식회사 | 표시 장치 및 전자 기기 |
| US9715919B1 (en) * | 2016-06-21 | 2017-07-25 | Micron Technology, Inc. | Array data bit inversion |
| US10353715B2 (en) * | 2016-10-20 | 2019-07-16 | Aspiring Sky Co. Limited | Low power non-volatile SRAM memory systems |
| US9812204B1 (en) * | 2016-10-28 | 2017-11-07 | AUCMOS Technologies USA, Inc. | Ferroelectric memory cell without a plate line |
| JP7073090B2 (ja) | 2016-12-28 | 2022-05-23 | 株式会社半導体エネルギー研究所 | ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器 |
| US10014036B1 (en) * | 2016-12-29 | 2018-07-03 | Intel Corporation | Low power and area efficient memory receiver |
| TWI748035B (zh) | 2017-01-20 | 2021-12-01 | 日商半導體能源硏究所股份有限公司 | 顯示系統及電子裝置 |
| WO2018138603A1 (en) | 2017-01-26 | 2018-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including the semiconductor device |
| WO2018150295A1 (ja) | 2017-02-15 | 2018-08-23 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN114628425A (zh) | 2017-05-26 | 2022-06-14 | 株式会社半导体能源研究所 | 摄像装置及电子设备 |
| CN109087674A (zh) * | 2017-06-14 | 2018-12-25 | 萨摩亚商费洛储存科技股份有限公司 | 铁电内存及其数据读取、写入与制造方法和电容结构 |
| US10461126B2 (en) * | 2017-08-16 | 2019-10-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory circuit and formation method thereof |
| US11450675B2 (en) * | 2018-09-14 | 2022-09-20 | Intel Corporation | One transistor and one ferroelectric capacitor memory cells in diagonal arrangements |
| US10720438B2 (en) * | 2018-09-28 | 2020-07-21 | Intel Corporation | Memory array with ferroelectric elements |
| KR20250173579A (ko) | 2018-10-19 | 2025-12-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| US10991406B2 (en) * | 2018-11-26 | 2021-04-27 | Arm Limited | Method, system and device for magnetic memory |
| KR102728607B1 (ko) * | 2019-02-18 | 2024-11-12 | 에스케이하이닉스 주식회사 | 증폭기, 이를 포함하는 수신 회로, 반도체 장치 및 반도체 시스템 |
| US12057508B2 (en) | 2019-03-29 | 2024-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device |
| US12082390B2 (en) | 2019-03-29 | 2024-09-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US10854617B2 (en) * | 2019-04-09 | 2020-12-01 | Micron Technology, Inc. | Integrated components which have both horizontally-oriented transistors and vertically-oriented transistors |
| US11205467B2 (en) * | 2019-05-09 | 2021-12-21 | Namlab Ggmbh | Ferroelectric memory and logic cell and operation method |
| US10803942B1 (en) * | 2019-06-07 | 2020-10-13 | Qualcomm Technologies, Inc. | Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods |
| US11631447B2 (en) * | 2019-07-25 | 2023-04-18 | Taiwan Semiconductor Manufacturing Co., Ltd. | Memory circuit and manufacturing method thereof |
| US11101320B2 (en) * | 2019-10-22 | 2021-08-24 | Samsung Electronics Co., Ltd | System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs) |
| US10763786B1 (en) * | 2019-10-28 | 2020-09-01 | Nxp B.V. | Differential crystal oscillator |
| US11043497B1 (en) * | 2019-12-19 | 2021-06-22 | Micron Technology, Inc. | Integrated memory having non-ohmic devices and capacitors |
| KR102903263B1 (ko) * | 2019-12-30 | 2025-12-22 | 삼성전자주식회사 | 강유전성의 커패시터, 트랜지스터, 메모리 소자 및 강유전성의 커패시터의 제조방법 |
| US11069402B1 (en) * | 2020-03-17 | 2021-07-20 | Globalfoundries U.S. Inc. | Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing |
| US11342422B2 (en) * | 2020-07-30 | 2022-05-24 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of manufacturing semiconductor device and associated memory device |
| CN115867968A (zh) * | 2020-08-03 | 2023-03-28 | 株式会社半导体能源研究所 | 半导体装置的驱动方法 |
| CN113257300B (zh) * | 2021-06-03 | 2023-06-06 | 清华大学 | 基于铁电电容的存储装置 |
-
2021
- 2021-09-08 CN CN202180062785.3A patent/CN116114019A/zh active Pending
- 2021-09-08 US US18/025,457 patent/US12354636B2/en active Active
- 2021-09-08 WO PCT/IB2021/058147 patent/WO2022064303A1/ja not_active Ceased
- 2021-09-08 JP JP2022551435A patent/JP7725488B2/ja active Active
- 2021-09-08 KR KR1020237009829A patent/KR20230071139A/ko active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03108769A (ja) * | 1989-09-22 | 1991-05-08 | Olympus Optical Co Ltd | 強誘電体メモリ |
| JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
| JPH1069766A (ja) * | 1996-07-01 | 1998-03-10 | Texas Instr Inc <Ti> | メモリセル |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230071139A (ko) | 2023-05-23 |
| JP7725488B2 (ja) | 2025-08-19 |
| US12354636B2 (en) | 2025-07-08 |
| WO2022064303A1 (ja) | 2022-03-31 |
| US20230335173A1 (en) | 2023-10-19 |
| CN116114019A (zh) | 2023-05-12 |
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