JPWO2022064303A1 - - Google Patents
Info
- Publication number
- JPWO2022064303A1 JPWO2022064303A1 JP2022551435A JP2022551435A JPWO2022064303A1 JP WO2022064303 A1 JPWO2022064303 A1 JP WO2022064303A1 JP 2022551435 A JP2022551435 A JP 2022551435A JP 2022551435 A JP2022551435 A JP 2022551435A JP WO2022064303 A1 JPWO2022064303 A1 JP WO2022064303A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
- G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158053 | 2020-09-22 | ||
| JP2021034922 | 2021-03-05 | ||
| PCT/IB2021/058147 WO2022064303A1 (ja) | 2020-09-22 | 2021-09-08 | 半導体装置、及び電子機器 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064303A1 true JPWO2022064303A1 (ja) | 2022-03-31 |
Family
ID=80845034
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551435A Pending JPWO2022064303A1 (ja) | 2020-09-22 | 2021-09-08 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20230335173A1 (ja) |
| JP (1) | JPWO2022064303A1 (ja) |
| KR (1) | KR20230071139A (ja) |
| CN (1) | CN116114019A (ja) |
| WO (1) | WO2022064303A1 (ja) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
| JP3960030B2 (ja) | 2001-12-11 | 2007-08-15 | 富士通株式会社 | 強誘電体メモリ |
| JP4177131B2 (ja) * | 2003-02-06 | 2008-11-05 | ローム株式会社 | 論理演算回路、論理演算装置および論理演算方法 |
| JP5067650B2 (ja) * | 2006-01-06 | 2012-11-07 | 日本電気株式会社 | 半導体記憶装置 |
| JP5190275B2 (ja) | 2008-01-09 | 2013-04-24 | パナソニック株式会社 | 半導体メモリセル及びそれを用いた半導体メモリアレイ |
-
2021
- 2021-09-08 CN CN202180062785.3A patent/CN116114019A/zh active Pending
- 2021-09-08 US US18/025,457 patent/US20230335173A1/en active Pending
- 2021-09-08 JP JP2022551435A patent/JPWO2022064303A1/ja active Pending
- 2021-09-08 KR KR1020237009829A patent/KR20230071139A/ko unknown
- 2021-09-08 WO PCT/IB2021/058147 patent/WO2022064303A1/ja active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022064303A1 (ja) | 2022-03-31 |
| CN116114019A (zh) | 2023-05-12 |
| US20230335173A1 (en) | 2023-10-19 |
| KR20230071139A (ko) | 2023-05-23 |