CN116114019A - 半导体装置及电子设备 - Google Patents

半导体装置及电子设备 Download PDF

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Publication number
CN116114019A
CN116114019A CN202180062785.3A CN202180062785A CN116114019A CN 116114019 A CN116114019 A CN 116114019A CN 202180062785 A CN202180062785 A CN 202180062785A CN 116114019 A CN116114019 A CN 116114019A
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CN
China
Prior art keywords
wiring
transistor
potential
memory cell
ftj
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Pending
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CN202180062785.3A
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English (en)
Chinese (zh)
Inventor
山崎舜平
木村肇
国武宽司
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Publication of CN116114019A publication Critical patent/CN116114019A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
CN202180062785.3A 2020-09-22 2021-09-08 半导体装置及电子设备 Pending CN116114019A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020158053 2020-09-22
JP2020-158053 2020-09-22
JP2021-034922 2021-03-05
JP2021034922 2021-03-05
PCT/IB2021/058147 WO2022064303A1 (ja) 2020-09-22 2021-09-08 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
CN116114019A true CN116114019A (zh) 2023-05-12

Family

ID=80845034

Family Applications (1)

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CN202180062785.3A Pending CN116114019A (zh) 2020-09-22 2021-09-08 半导体装置及电子设备

Country Status (5)

Country Link
US (1) US12354636B2 (https=)
JP (1) JP7725488B2 (https=)
KR (1) KR20230071139A (https=)
CN (1) CN116114019A (https=)
WO (1) WO2022064303A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119761127A (zh) * 2024-12-20 2025-04-04 湖北江城实验室 半导体结构的设计方法、设计设备及计算机可读存储介质

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018644A (zh) * 2020-09-06 2023-04-25 株式会社半导体能源研究所 半导体装置及电子设备
KR20230070233A (ko) * 2020-09-22 2023-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2022084782A1 (ja) 2020-10-20 2022-04-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12481867B2 (en) * 2021-04-28 2025-11-25 Arm Limited Memory for artificial neural network accelerator
CN118401087A (zh) * 2024-05-08 2024-07-26 洛玛瑞科技有限公司 一种铁电隧道结器件和存储单元

Family Cites Families (58)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03108769A (ja) * 1989-09-22 1991-05-08 Olympus Optical Co Ltd 強誘電体メモリ
JPH05347422A (ja) * 1992-06-16 1993-12-27 Fujitsu Ltd 二安定ダイオード
US6013950A (en) * 1994-05-19 2000-01-11 Sandia Corporation Semiconductor diode with external field modulation
US5532953A (en) * 1995-03-29 1996-07-02 Ramtron International Corporation Ferroelectric memory sensing method using distinct read and write voltages
US5808929A (en) * 1995-12-06 1998-09-15 Sheikholeslami; Ali Nonvolatile content addressable memory
JP3884536B2 (ja) * 1996-07-01 2007-02-21 テキサス インスツルメンツ インコーポレイテツド メモリセル
JP2002299575A (ja) * 2001-03-29 2002-10-11 Toshiba Corp 半導体記憶装置
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
US6898104B2 (en) * 2002-11-12 2005-05-24 Kabushiki Kaisha Toshiba Semiconductor device having semiconductor memory with sense amplifier
JP4177131B2 (ja) 2003-02-06 2008-11-05 ローム株式会社 論理演算回路、論理演算装置および論理演算方法
JP4393980B2 (ja) 2004-06-14 2010-01-06 シャープ株式会社 表示装置
US7499303B2 (en) * 2004-09-24 2009-03-03 Integrated Device Technology, Inc. Binary and ternary non-volatile CAM
JP5067650B2 (ja) 2006-01-06 2012-11-07 日本電気株式会社 半導体記憶装置
JP5019223B2 (ja) * 2007-11-21 2012-09-05 株式会社東芝 半導体記憶装置
US7667997B2 (en) * 2007-12-27 2010-02-23 Texas Instruments Incorporated Method to improve ferroelectronic memory performance and reliability
KR100929296B1 (ko) * 2007-12-31 2009-11-27 주식회사 하이닉스반도체 Ｒｆｉｄ 태그 장치
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
JP2010033624A (ja) * 2008-07-25 2010-02-12 Toshiba Corp 半導体記憶装置
US8565000B2 (en) * 2010-06-11 2013-10-22 Radiant Technologies, Inc. Variable impedance circuit controlled by a ferroelectric capacitor
US20120020140A1 (en) * 2010-07-20 2012-01-26 Industrial Technology Research Institute Resistive memory cell and operation thereof, and resistive memory and operation and fabrication thereof
JP5833347B2 (ja) * 2011-06-08 2015-12-16 ローム株式会社 データ処理装置
US8756558B2 (en) * 2012-03-30 2014-06-17 Texas Instruments Incorporated FRAM compiler and layout
JP2017108397A (ja) 2015-11-30 2017-06-15 株式会社半導体エネルギー研究所 信号処理回路、及び該信号処理回路を有する半導体装置
US9728259B1 (en) * 2016-03-15 2017-08-08 Qualcomm Technologies, Inc. Non-volatile (NV)-content addressable memory (CAM) (NV-CAM) cells employing differential magnetic tunnel junction (MTJ) sensing for increased sense margin
KR102382727B1 (ko) 2016-03-18 2022-04-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 사용한 시스템
US9851914B2 (en) * 2016-03-24 2017-12-26 Texas Instruments Incorporated Random number generation in ferroelectric random access memory (FRAM)
US20170344430A1 (en) * 2016-05-24 2017-11-30 Intel Corporation Method and apparatus for data checkpointing and restoration in a storage device
KR102641557B1 (ko) 2016-06-20 2024-02-28 소니그룹주식회사 표시 장치 및 전자 기기
US9715919B1 (en) * 2016-06-21 2017-07-25 Micron Technology, Inc. Array data bit inversion
US10353715B2 (en) * 2016-10-20 2019-07-16 Aspiring Sky Co. Limited Low power non-volatile SRAM memory systems
US9812204B1 (en) * 2016-10-28 2017-11-07 AUCMOS Technologies USA, Inc. Ferroelectric memory cell without a plate line
JP7073090B2 (ja) 2016-12-28 2022-05-23 株式会社半導体エネルギー研究所 ニューラルネットワークを利用したデータ処理装置、電子部品、および電子機器
US10014036B1 (en) * 2016-12-29 2018-07-03 Intel Corporation Low power and area efficient memory receiver
TWI748035B (zh) 2017-01-20 2021-12-01 日商半導體能源硏究所股份有限公司 顯示系統及電子裝置
WO2018138603A1 (en) 2017-01-26 2018-08-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device including the semiconductor device
WO2018150295A1 (ja) 2017-02-15 2018-08-23 株式会社半導体エネルギー研究所 半導体装置
CN114628425A (zh) 2017-05-26 2022-06-14 株式会社半导体能源研究所 摄像装置及电子设备
CN109087674A (zh) * 2017-06-14 2018-12-25 萨摩亚商费洛储存科技股份有限公司 铁电内存及其数据读取、写入与制造方法和电容结构
US10461126B2 (en) * 2017-08-16 2019-10-29 Taiwan Semiconductor Manufacturing Co., Ltd. Memory circuit and formation method thereof
US11450675B2 (en) * 2018-09-14 2022-09-20 Intel Corporation One transistor and one ferroelectric capacitor memory cells in diagonal arrangements
US10720438B2 (en) * 2018-09-28 2020-07-21 Intel Corporation Memory array with ferroelectric elements
KR20250173579A (ko) 2018-10-19 2025-12-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
US10991406B2 (en) * 2018-11-26 2021-04-27 Arm Limited Method, system and device for magnetic memory
KR102728607B1 (ko) * 2019-02-18 2024-11-12 에스케이하이닉스 주식회사 증폭기, 이를 포함하는 수신 회로, 반도체 장치 및 반도체 시스템
US12057508B2 (en) 2019-03-29 2024-08-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
US12082390B2 (en) 2019-03-29 2024-09-03 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10854617B2 (en) * 2019-04-09 2020-12-01 Micron Technology, Inc. Integrated components which have both horizontally-oriented transistors and vertically-oriented transistors
US11205467B2 (en) * 2019-05-09 2021-12-21 Namlab Ggmbh Ferroelectric memory and logic cell and operation method
US10803942B1 (en) * 2019-06-07 2020-10-13 Qualcomm Technologies, Inc. Transistor noise tolerant, non-volatile (NV) resistance element-based static random access memory (SRAM) physically unclonable function (PUF) circuits, and related systems and methods
US11631447B2 (en) * 2019-07-25 2023-04-18 Taiwan Semiconductor Manufacturing Co., Ltd. Memory circuit and manufacturing method thereof
US11101320B2 (en) * 2019-10-22 2021-08-24 Samsung Electronics Co., Ltd System and method for efficient enhancement of an on/off ratio of a bitcell based on 3T2R binary weight cell with spin orbit torque MJTs (SOT-MTJs)
US10763786B1 (en) * 2019-10-28 2020-09-01 Nxp B.V. Differential crystal oscillator
US11043497B1 (en) * 2019-12-19 2021-06-22 Micron Technology, Inc. Integrated memory having non-ohmic devices and capacitors
KR102903263B1 (ko) * 2019-12-30 2025-12-22 삼성전자주식회사 강유전성의 커패시터, 트랜지스터, 메모리 소자 및 강유전성의 커패시터의 제조방법
US11069402B1 (en) * 2020-03-17 2021-07-20 Globalfoundries U.S. Inc. Integrated pixel and three-terminal non-volatile memory cell and an array of cells for deep in-sensor, in-memory computing
US11342422B2 (en) * 2020-07-30 2022-05-24 Taiwan Semiconductor Manufacturing Company Ltd. Method of manufacturing semiconductor device and associated memory device
CN115867968A (zh) * 2020-08-03 2023-03-28 株式会社半导体能源研究所 半导体装置的驱动方法
CN113257300B (zh) * 2021-06-03 2023-06-06 清华大学 基于铁电电容的存储装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN119761127A (zh) * 2024-12-20 2025-04-04 湖北江城实验室 半导体结构的设计方法、设计设备及计算机可读存储介质
CN119761127B (zh) * 2024-12-20 2025-12-05 湖北江城实验室 半导体结构的设计方法、设计设备及计算机可读存储介质

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KR20230071139A (ko) 2023-05-23
JPWO2022064303A1 (https=) 2022-03-31
JP7725488B2 (ja) 2025-08-19
US12354636B2 (en) 2025-07-08
WO2022064303A1 (ja) 2022-03-31
US20230335173A1 (en) 2023-10-19

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