KR20230071139A - 반도체 장치 및 전자 기기 - Google Patents

반도체 장치 및 전자 기기 Download PDF

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Publication number
KR20230071139A
KR20230071139A KR1020237009829A KR20237009829A KR20230071139A KR 20230071139 A KR20230071139 A KR 20230071139A KR 1020237009829 A KR1020237009829 A KR 1020237009829A KR 20237009829 A KR20237009829 A KR 20237009829A KR 20230071139 A KR20230071139 A KR 20230071139A
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KR
South Korea
Prior art keywords
wiring
transistor
potential
memory cell
time
Prior art date
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Pending
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KR1020237009829A
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English (en)
Korean (ko)
Inventor
순페이 야마자키
하지메 키무라
히토시 쿠니타케
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
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Publication of KR20230071139A publication Critical patent/KR20230071139A/ko
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G11C11/38—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic) using tunnel diodes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
KR1020237009829A 2020-09-22 2021-09-08 반도체 장치 및 전자 기기 Pending KR20230071139A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020158053 2020-09-22
JPJP-P-2020-158053 2020-09-22
JPJP-P-2021-034922 2021-03-05
JP2021034922 2021-03-05
PCT/IB2021/058147 WO2022064303A1 (ja) 2020-09-22 2021-09-08 半導体装置、及び電子機器

Publications (1)

Publication Number Publication Date
KR20230071139A true KR20230071139A (ko) 2023-05-23

Family

ID=80845034

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009829A Pending KR20230071139A (ko) 2020-09-22 2021-09-08 반도체 장치 및 전자 기기

Country Status (5)

Country Link
US (1) US12354636B2 (https=)
JP (1) JP7725488B2 (https=)
KR (1) KR20230071139A (https=)
CN (1) CN116114019A (https=)
WO (1) WO2022064303A1 (https=)

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CN116018644A (zh) * 2020-09-06 2023-04-25 株式会社半导体能源研究所 半导体装置及电子设备
KR20230070233A (ko) * 2020-09-22 2023-05-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 전자 기기
WO2022084782A1 (ja) 2020-10-20 2022-04-28 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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Also Published As

Publication number Publication date
JPWO2022064303A1 (https=) 2022-03-31
JP7725488B2 (ja) 2025-08-19
US12354636B2 (en) 2025-07-08
WO2022064303A1 (ja) 2022-03-31
US20230335173A1 (en) 2023-10-19
CN116114019A (zh) 2023-05-12

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