JP7798781B2 - 半導体装置、及び電子機器 - Google Patents

半導体装置、及び電子機器

Info

Publication number
JP7798781B2
JP7798781B2 JP2022557212A JP2022557212A JP7798781B2 JP 7798781 B2 JP7798781 B2 JP 7798781B2 JP 2022557212 A JP2022557212 A JP 2022557212A JP 2022557212 A JP2022557212 A JP 2022557212A JP 7798781 B2 JP7798781 B2 JP 7798781B2
Authority
JP
Japan
Prior art keywords
wiring
transistor
potential
memory cell
circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022557212A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022084782A5 (https=
JPWO2022084782A1 (https=
Inventor
舜平 山崎
肇 木村
隆之 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2022084782A1 publication Critical patent/JPWO2022084782A1/ja
Publication of JPWO2022084782A5 publication Critical patent/JPWO2022084782A5/ja
Priority to JP2025281865A priority Critical patent/JP2026067874A/ja
Application granted granted Critical
Publication of JP7798781B2 publication Critical patent/JP7798781B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0072—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a ferroelectric element
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/0081—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a magnetic RAM [MRAM] element or ferromagnetic cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
    • G11C14/0054—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell
    • G11C14/009—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down in which the volatile element is a SRAM cell and the nonvolatile element is a resistive RAM element, i.e. programmable resistors, e.g. formed of phase change or chalcogenide material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
JP2022557212A 2020-10-20 2021-10-07 半導体装置、及び電子機器 Active JP7798781B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025281865A JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020176236 2020-10-20
JP2020176236 2020-10-20
JP2021034923 2021-03-05
JP2021034923 2021-03-05
PCT/IB2021/059187 WO2022084782A1 (ja) 2020-10-20 2021-10-07 半導体装置、及び電子機器

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025281865A Division JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022084782A1 JPWO2022084782A1 (https=) 2022-04-28
JPWO2022084782A5 JPWO2022084782A5 (https=) 2024-10-15
JP7798781B2 true JP7798781B2 (ja) 2026-01-14

Family

ID=81290166

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022557212A Active JP7798781B2 (ja) 2020-10-20 2021-10-07 半導体装置、及び電子機器
JP2025281865A Pending JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025281865A Pending JP2026067874A (ja) 2020-10-20 2025-12-25 半導体装置

Country Status (3)

Country Link
US (1) US12610553B2 (https=)
JP (2) JP7798781B2 (https=)
WO (1) WO2022084782A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022064309A1 (ja) * 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
US12170519B2 (en) 2021-07-07 2024-12-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US12274068B2 (en) * 2022-05-09 2025-04-08 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming ferroelectric memory device

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109875A (ja) 2000-09-29 2002-04-12 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
JP2008176910A (ja) 2006-12-21 2008-07-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2015141625A1 (ja) 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置
JP2019194931A (ja) 2018-05-01 2019-11-07 ローム株式会社 半導体記憶装置
JP2019201034A (ja) 2018-05-14 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10335489A (ja) 1997-05-28 1998-12-18 Nkk Corp 半導体メモリセル
JP3960030B2 (ja) 2001-12-11 2007-08-15 富士通株式会社 強誘電体メモリ
US7839697B2 (en) 2006-12-21 2010-11-23 Panasonic Corporation Semiconductor memory device
JP5190275B2 (ja) 2008-01-09 2013-04-24 パナソニック株式会社 半導体メモリセル及びそれを用いた半導体メモリアレイ
JP6174899B2 (ja) 2012-05-11 2017-08-02 株式会社半導体エネルギー研究所 半導体装置
US11289145B2 (en) * 2020-01-10 2022-03-29 Ferroelectric Memory Gmbh Memory cell, memory cell arrangement, and methods thereof
WO2022064309A1 (ja) 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
WO2022064303A1 (ja) 2020-09-22 2022-03-31 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
CN116097358A (zh) 2020-09-25 2023-05-09 株式会社半导体能源研究所 半导体装置及电子设备
US11688457B2 (en) * 2020-12-26 2023-06-27 International Business Machines Corporation Using ferroelectric field-effect transistors (FeFETs) as capacitive processing units for in-memory computing
US11996131B2 (en) * 2022-01-04 2024-05-28 Ferroelectric Memory Gmbh Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002109875A (ja) 2000-09-29 2002-04-12 Nec Corp 強誘電体容量を用いたシャドーｒａｍセル及び不揮発性メモリ装置並びにその制御方法
JP2008176910A (ja) 2006-12-21 2008-07-31 Matsushita Electric Ind Co Ltd 半導体記憶装置
WO2015141625A1 (ja) 2014-03-17 2015-09-24 株式会社 東芝 不揮発性記憶装置
JP2019194931A (ja) 2018-05-01 2019-11-07 ローム株式会社 半導体記憶装置
JP2019201034A (ja) 2018-05-14 2019-11-21 ソニーセミコンダクタソリューションズ株式会社 半導体装置及び電子機器

Also Published As

Publication number Publication date
JPWO2022084782A1 (https=) 2022-04-28
US20230380175A1 (en) 2023-11-23
JP2026067874A (ja) 2026-04-21
WO2022084782A1 (ja) 2022-04-28
US12610553B2 (en) 2026-04-21

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