JPWO2022106955A5 - - Google Patents
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- Publication number
- JPWO2022106955A5 JPWO2022106955A5 JP2022563255A JP2022563255A JPWO2022106955A5 JP WO2022106955 A5 JPWO2022106955 A5 JP WO2022106955A5 JP 2022563255 A JP2022563255 A JP 2022563255A JP 2022563255 A JP2022563255 A JP 2022563255A JP WO2022106955 A5 JPWO2022106955 A5 JP WO2022106955A5
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- layer
- gate
- drain
- oxide semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025186353A JP2026015370A (ja) | 2020-11-20 | 2025-11-05 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020193613 | 2020-11-20 | ||
| JP2020193613 | 2020-11-20 | ||
| PCT/IB2021/060337 WO2022106955A1 (ja) | 2020-11-20 | 2021-11-09 | トランジスタ、及び半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025186353A Division JP2026015370A (ja) | 2020-11-20 | 2025-11-05 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022106955A1 JPWO2022106955A1 (https=) | 2022-05-27 |
| JPWO2022106955A5 true JPWO2022106955A5 (https=) | 2024-10-24 |
| JP7771081B2 JP7771081B2 (ja) | 2025-11-17 |
Family
ID=81708445
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022563255A Active JP7771081B2 (ja) | 2020-11-20 | 2021-11-09 | トランジスタ、及び半導体装置 |
| JP2025186353A Pending JP2026015370A (ja) | 2020-11-20 | 2025-11-05 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025186353A Pending JP2026015370A (ja) | 2020-11-20 | 2025-11-05 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20230411521A1 (https=) |
| JP (2) | JP7771081B2 (https=) |
| CN (1) | CN116457790A (https=) |
| WO (1) | WO2022106955A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12369325B2 (en) * | 2022-06-15 | 2025-07-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gate-last tri-gate FeFET |
| CN118522733B (zh) * | 2024-05-10 | 2026-01-23 | 中国科学院微电子研究所 | 一种铁电器件及其制备方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010267704A (ja) * | 2009-05-13 | 2010-11-25 | Panasonic Corp | 半導体メモリセルおよびその製造方法 |
| US8558295B2 (en) * | 2009-08-25 | 2013-10-15 | Electronics And Telecommunications Research Institute | Nonvolatile memory cell and method of manufacturing the same |
| JP6926475B2 (ja) * | 2015-11-25 | 2021-08-25 | 東レ株式会社 | 強誘電体記憶素子、その製造方法、ならびにそれを用いたメモリセルおよびそれを用いた無線通信装置 |
| CN110622348A (zh) | 2017-05-03 | 2019-12-27 | 株式会社半导体能源研究所 | 神经网络、蓄电系统、车辆及电子设备 |
| CN117993454A (zh) * | 2017-06-21 | 2024-05-07 | 株式会社半导体能源研究所 | 包括神经网络的半导体装置 |
-
2021
- 2021-11-09 JP JP2022563255A patent/JP7771081B2/ja active Active
- 2021-11-09 CN CN202180077756.4A patent/CN116457790A/zh active Pending
- 2021-11-09 WO PCT/IB2021/060337 patent/WO2022106955A1/ja not_active Ceased
- 2021-11-09 US US18/036,727 patent/US20230411521A1/en active Pending
-
2025
- 2025-11-05 JP JP2025186353A patent/JP2026015370A/ja active Pending