JP7771081B2 - トランジスタ、及び半導体装置 - Google Patents

トランジスタ、及び半導体装置

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Publication number
JP7771081B2
JP7771081B2 JP2022563255A JP2022563255A JP7771081B2 JP 7771081 B2 JP7771081 B2 JP 7771081B2 JP 2022563255 A JP2022563255 A JP 2022563255A JP 2022563255 A JP2022563255 A JP 2022563255A JP 7771081 B2 JP7771081 B2 JP 7771081B2
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JP
Japan
Prior art keywords
transistor
oxide
layer
insulator
region
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Active
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JP2022563255A
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English (en)
Japanese (ja)
Other versions
JPWO2022106955A1 (https=
JPWO2022106955A5 (https=
Inventor
優希 伊藤
寛司 國武
和幸 種村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
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Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of JPWO2022106955A1 publication Critical patent/JPWO2022106955A1/ja
Publication of JPWO2022106955A5 publication Critical patent/JPWO2022106955A5/ja
Priority to JP2025186353A priority Critical patent/JP2026015370A/ja
Application granted granted Critical
Publication of JP7771081B2 publication Critical patent/JP7771081B2/ja
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/54—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using elements simulating biological cells, e.g. neuron
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06G—ANALOGUE COMPUTERS
    • G06G7/00—Devices in which the computing operation is performed by varying electric or magnetic quantities
    • G06G7/12—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor
    • G06G7/16—Arrangements for performing computing operations, e.g. operational amplifiers specially adapted therefor for multiplication or division
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/02—Neural networks
    • G06N3/06—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons
    • G06N3/063—Physical realisation, i.e. hardware implementation of neural networks, neurons or parts of neurons using electronic means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/701—IGFETs having ferroelectric gate insulators, e.g. ferroelectric FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/223—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using MOS with ferroelectric gate insulating film
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biomedical Technology (AREA)
  • Mathematical Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Neurology (AREA)
  • Biophysics (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Software Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Computational Linguistics (AREA)
  • Artificial Intelligence (AREA)
  • Computing Systems (AREA)
  • Data Mining & Analysis (AREA)
  • Power Engineering (AREA)
  • Evolutionary Computation (AREA)
  • Thin Film Transistor (AREA)
JP2022563255A 2020-11-20 2021-11-09 トランジスタ、及び半導体装置 Active JP7771081B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025186353A JP2026015370A (ja) 2020-11-20 2025-11-05 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020193613 2020-11-20
JP2020193613 2020-11-20
PCT/IB2021/060337 WO2022106955A1 (ja) 2020-11-20 2021-11-09 トランジスタ、及び半導体装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025186353A Division JP2026015370A (ja) 2020-11-20 2025-11-05 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2022106955A1 JPWO2022106955A1 (https=) 2022-05-27
JPWO2022106955A5 JPWO2022106955A5 (https=) 2024-10-24
JP7771081B2 true JP7771081B2 (ja) 2025-11-17

Family

ID=81708445

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022563255A Active JP7771081B2 (ja) 2020-11-20 2021-11-09 トランジスタ、及び半導体装置
JP2025186353A Pending JP2026015370A (ja) 2020-11-20 2025-11-05 半導体装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025186353A Pending JP2026015370A (ja) 2020-11-20 2025-11-05 半導体装置

Country Status (4)

Country Link
US (1) US20230411521A1 (https=)
JP (2) JP7771081B2 (https=)
CN (1) CN116457790A (https=)
WO (1) WO2022106955A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12369325B2 (en) * 2022-06-15 2025-07-22 Taiwan Semiconductor Manufacturing Company, Ltd. Gate-last tri-gate FeFET
CN118522733B (zh) * 2024-05-10 2026-01-23 中国科学院微电子研究所 一种铁电器件及其制备方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131311A1 (ja) 2009-05-13 2010-11-18 パナソニック株式会社 半導体メモリセルおよびその製造方法
JP2011049537A (ja) 2009-08-25 2011-03-10 Korea Electronics Telecommun 不揮発性メモリセル及びその製造方法
WO2017090559A1 (ja) 2015-11-25 2017-06-01 東レ株式会社 強誘電体記憶素子、その製造方法、ならびにそれを用いたメモリセルおよびそれを用いた無線通信装置
WO2018234919A1 (ja) 2017-06-21 2018-12-27 株式会社半導体エネルギー研究所 ニューラルネットワークを有する半導体装置
JP2019023853A (ja) 2017-05-03 2019-02-14 株式会社半導体エネルギー研究所 ニューラルネットワーク、蓄電システム、車両、及び電子機器

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010131311A1 (ja) 2009-05-13 2010-11-18 パナソニック株式会社 半導体メモリセルおよびその製造方法
JP2011049537A (ja) 2009-08-25 2011-03-10 Korea Electronics Telecommun 不揮発性メモリセル及びその製造方法
WO2017090559A1 (ja) 2015-11-25 2017-06-01 東レ株式会社 強誘電体記憶素子、その製造方法、ならびにそれを用いたメモリセルおよびそれを用いた無線通信装置
JP2019023853A (ja) 2017-05-03 2019-02-14 株式会社半導体エネルギー研究所 ニューラルネットワーク、蓄電システム、車両、及び電子機器
WO2018234919A1 (ja) 2017-06-21 2018-12-27 株式会社半導体エネルギー研究所 ニューラルネットワークを有する半導体装置

Also Published As

Publication number Publication date
CN116457790A (zh) 2023-07-18
JP2026015370A (ja) 2026-01-29
US20230411521A1 (en) 2023-12-21
JPWO2022106955A1 (https=) 2022-05-27
WO2022106955A1 (ja) 2022-05-27

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