KR20230069128A - 반도체 장치의 구동 방법 - Google Patents

반도체 장치의 구동 방법 Download PDF

Info

Publication number
KR20230069128A
KR20230069128A KR1020237009957A KR20237009957A KR20230069128A KR 20230069128 A KR20230069128 A KR 20230069128A KR 1020237009957 A KR1020237009957 A KR 1020237009957A KR 20237009957 A KR20237009957 A KR 20237009957A KR 20230069128 A KR20230069128 A KR 20230069128A
Authority
KR
South Korea
Prior art keywords
insulator
transistor
oxide
conductor
memory cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237009957A
Other languages
English (en)
Korean (ko)
Inventor
유키 오카모토
타츠야 오누키
타카노리 마츠자키
Original Assignee
가부시키가이샤 한도오따이 에네루기 켄큐쇼
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 한도오따이 에네루기 켄큐쇼 filed Critical 가부시키가이샤 한도오따이 에네루기 켄큐쇼
Publication of KR20230069128A publication Critical patent/KR20230069128A/ko
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
KR1020237009957A 2020-09-22 2021-09-09 반도체 장치의 구동 방법 Pending KR20230069128A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158038 2020-09-22
JPJP-P-2020-158038 2020-09-22
PCT/IB2021/058181 WO2022064308A1 (ja) 2020-09-22 2021-09-09 半導体装置の駆動方法

Publications (1)

Publication Number Publication Date
KR20230069128A true KR20230069128A (ko) 2023-05-18

Family

ID=80846275

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237009957A Pending KR20230069128A (ko) 2020-09-22 2021-09-09 반도체 장치의 구동 방법

Country Status (5)

Country Link
US (1) US12437793B2 (https=)
JP (2) JP7719087B2 (https=)
KR (1) KR20230069128A (https=)
CN (1) CN116114018A (https=)
WO (1) WO2022064308A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018644A (zh) * 2020-09-06 2023-04-25 株式会社半导体能源研究所 半导体装置及电子设备
WO2024194725A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP3191550B2 (ja) 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP2692610B2 (ja) 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JPH08273373A (ja) 1995-03-30 1996-10-18 Yamaha Corp 半導体記憶装置とその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
JP4114659B2 (ja) * 2004-11-26 2008-07-09 セイコーエプソン株式会社 強誘電体メモリ及びその駆動方法
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
JP2008135136A (ja) 2006-11-29 2008-06-12 Fujitsu Ltd 強誘電体メモリおよび強誘電体メモリの動作方法
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9685216B2 (en) * 2015-01-24 2017-06-20 Fudan University Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder
US11996131B2 (en) * 2022-01-04 2024-05-28 Ferroelectric Memory Gmbh Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
Jun Okuno, et al, "SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0.5Zr0.5O2", VLSI 2020
T. S. Boescke, et al, "Ferroelectricity in hafnium oxide thin films", APL99, 2011
Zhen Fan, et al, "Ferroelectric HfO2-based materials for next-generation ferroelectric memories", JOURNAL OF ADVANCED DIELECTRICS, Vol.6, No.2, 2016
토리우미 아키라, "HfO2 박막의 강유전성", 응용 물리 학회, 제 88 권, 제 9 호, 2019

Also Published As

Publication number Publication date
WO2022064308A1 (ja) 2022-03-31
JP7719087B2 (ja) 2025-08-05
JP2025146893A (ja) 2025-10-03
US12437793B2 (en) 2025-10-07
JPWO2022064308A1 (https=) 2022-03-31
US20240029773A1 (en) 2024-01-25
CN116114018A (zh) 2023-05-12

Similar Documents

Publication Publication Date Title
JP7725488B2 (ja) 半導体装置、及び電子機器
JP2025146893A (ja) 半導体装置の駆動方法
JP7727648B2 (ja) 半導体装置、及び電子機器
JP7798781B2 (ja) 半導体装置、及び電子機器
JP2026050393A (ja) 半導体装置
JP7711071B2 (ja) 半導体装置、及び電子機器
JP2025156443A (ja) 半導体装置の駆動方法
JP7723677B2 (ja) 半導体装置、及び電子機器
US20250008741A1 (en) Semiconductor device
JP7784381B2 (ja) 半導体装置、及び電子機器
WO2023144652A1 (ja) 記憶装置
KR20240150460A (ko) 반도체 장치
WO2022064304A1 (ja) 半導体装置の駆動方法
JP7854098B2 (ja) 半導体装置
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
JP2026067874A (ja) 半導体装置
WO2023144653A1 (ja) 記憶装置
WO2023047229A1 (ja) 半導体装置、記憶装置、及び電子機器
CN118235535A (zh) 存储元件及存储装置

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20230323

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20240905

Comment text: Request for Examination of Application