JP7719087B2 - 半導体装置の駆動方法 - Google Patents
半導体装置の駆動方法Info
- Publication number
- JP7719087B2 JP7719087B2 JP2022551440A JP2022551440A JP7719087B2 JP 7719087 B2 JP7719087 B2 JP 7719087B2 JP 2022551440 A JP2022551440 A JP 2022551440A JP 2022551440 A JP2022551440 A JP 2022551440A JP 7719087 B2 JP7719087 B2 JP 7719087B2
- Authority
- JP
- Japan
- Prior art keywords
- insulator
- transistor
- oxide
- conductor
- memory cell
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2253—Address circuits or decoders
- G11C11/2257—Word-line or row circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2259—Cell access
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2273—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2275—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- G11C11/225—Auxiliary circuits
- G11C11/2293—Timing circuits or methods
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025123748A JP2025146893A (ja) | 2020-09-22 | 2025-07-24 | 半導体装置の駆動方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020158038 | 2020-09-22 | ||
| JP2020158038 | 2020-09-22 | ||
| PCT/IB2021/058181 WO2022064308A1 (ja) | 2020-09-22 | 2021-09-09 | 半導体装置の駆動方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025123748A Division JP2025146893A (ja) | 2020-09-22 | 2025-07-24 | 半導体装置の駆動方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022064308A1 JPWO2022064308A1 (https=) | 2022-03-31 |
| JPWO2022064308A5 JPWO2022064308A5 (https=) | 2024-09-17 |
| JP7719087B2 true JP7719087B2 (ja) | 2025-08-05 |
Family
ID=80846275
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022551440A Active JP7719087B2 (ja) | 2020-09-22 | 2021-09-09 | 半導体装置の駆動方法 |
| JP2025123748A Pending JP2025146893A (ja) | 2020-09-22 | 2025-07-24 | 半導体装置の駆動方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025123748A Pending JP2025146893A (ja) | 2020-09-22 | 2025-07-24 | 半導体装置の駆動方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12437793B2 (https=) |
| JP (2) | JP7719087B2 (https=) |
| KR (1) | KR20230069128A (https=) |
| CN (1) | CN116114018A (https=) |
| WO (1) | WO2022064308A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116018644A (zh) * | 2020-09-06 | 2023-04-25 | 株式会社半导体能源研究所 | 半导体装置及电子设备 |
| WO2024194725A1 (ja) * | 2023-03-17 | 2024-09-26 | 株式会社半導体エネルギー研究所 | 半導体装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135136A (ja) | 2006-11-29 | 2008-06-12 | Fujitsu Ltd | 強誘電体メモリおよび強誘電体メモリの動作方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5519234A (en) | 1991-02-25 | 1996-05-21 | Symetrix Corporation | Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current |
| JP3191550B2 (ja) | 1994-02-15 | 2001-07-23 | 松下電器産業株式会社 | 半導体メモリ装置 |
| JP2692610B2 (ja) | 1994-09-28 | 1997-12-17 | 日本電気株式会社 | 半導体不揮発性メモリセル及びその動作方法 |
| JPH08273373A (ja) | 1995-03-30 | 1996-10-18 | Yamaha Corp | 半導体記憶装置とその動作方法 |
| JP3188179B2 (ja) | 1995-09-26 | 2001-07-16 | シャープ株式会社 | 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法 |
| JP2939973B2 (ja) | 1996-06-06 | 1999-08-25 | 日本電気株式会社 | 不揮発性半導体メモリ装置の駆動方法 |
| JP4256670B2 (ja) | 2002-12-10 | 2009-04-22 | 富士通株式会社 | 容量素子、半導体装置およびその製造方法 |
| JP4652087B2 (ja) | 2004-03-11 | 2011-03-16 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP4114659B2 (ja) * | 2004-11-26 | 2008-07-09 | セイコーエプソン株式会社 | 強誘電体メモリ及びその駆動方法 |
| US7928910B2 (en) | 2005-03-31 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Wireless chip and electronic device having wireless chip |
| CN102742003B (zh) | 2010-01-15 | 2015-01-28 | 株式会社半导体能源研究所 | 半导体器件 |
| JP6258672B2 (ja) | 2013-11-21 | 2018-01-10 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
| US9685216B2 (en) * | 2015-01-24 | 2017-06-20 | Fudan University | Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same |
| US11121139B2 (en) * | 2017-11-16 | 2021-09-14 | International Business Machines Corporation | Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes |
| US11171115B2 (en) | 2019-03-18 | 2021-11-09 | Kepler Computing Inc. | Artificial intelligence processor with three-dimensional stacked memory |
| US11296708B2 (en) | 2019-12-27 | 2022-04-05 | Kepler Computing, Inc. | Low power ferroelectric based majority logic gate adder |
| US11996131B2 (en) * | 2022-01-04 | 2024-05-28 | Ferroelectric Memory Gmbh | Preconditioning operation for a memory cell with a spontaneously-polarizable memory element |
-
2021
- 2021-09-09 WO PCT/IB2021/058181 patent/WO2022064308A1/ja not_active Ceased
- 2021-09-09 US US18/245,784 patent/US12437793B2/en active Active
- 2021-09-09 KR KR1020237009957A patent/KR20230069128A/ko active Pending
- 2021-09-09 JP JP2022551440A patent/JP7719087B2/ja active Active
- 2021-09-09 CN CN202180061513.1A patent/CN116114018A/zh active Pending
-
2025
- 2025-07-24 JP JP2025123748A patent/JP2025146893A/ja active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008135136A (ja) | 2006-11-29 | 2008-06-12 | Fujitsu Ltd | 強誘電体メモリおよび強誘電体メモリの動作方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20230069128A (ko) | 2023-05-18 |
| WO2022064308A1 (ja) | 2022-03-31 |
| JP2025146893A (ja) | 2025-10-03 |
| US12437793B2 (en) | 2025-10-07 |
| JPWO2022064308A1 (https=) | 2022-03-31 |
| US20240029773A1 (en) | 2024-01-25 |
| CN116114018A (zh) | 2023-05-12 |
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