CN116114018A - 半导体装置的驱动方法 - Google Patents

半导体装置的驱动方法 Download PDF

Info

Publication number
CN116114018A
CN116114018A CN202180061513.1A CN202180061513A CN116114018A CN 116114018 A CN116114018 A CN 116114018A CN 202180061513 A CN202180061513 A CN 202180061513A CN 116114018 A CN116114018 A CN 116114018A
Authority
CN
China
Prior art keywords
insulator
transistor
oxide
conductor
addition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180061513.1A
Other languages
English (en)
Chinese (zh)
Inventor
冈本佑树
大贯达也
松嵜隆德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Publication of CN116114018A publication Critical patent/CN116114018A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2253—Address circuits or decoders
    • G11C11/2257—Word-line or row circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2275—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/221—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements using ferroelectric capacitors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2259—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2273—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • G11C11/225—Auxiliary circuits
    • G11C11/2293—Timing circuits or methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Dram (AREA)
  • Thin Film Transistor (AREA)
CN202180061513.1A 2020-09-22 2021-09-09 半导体装置的驱动方法 Pending CN116114018A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020158038 2020-09-22
JP2020-158038 2020-09-22
PCT/IB2021/058181 WO2022064308A1 (ja) 2020-09-22 2021-09-09 半導体装置の駆動方法

Publications (1)

Publication Number Publication Date
CN116114018A true CN116114018A (zh) 2023-05-12

Family

ID=80846275

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180061513.1A Pending CN116114018A (zh) 2020-09-22 2021-09-09 半导体装置的驱动方法

Country Status (5)

Country Link
US (1) US12437793B2 (https=)
JP (2) JP7719087B2 (https=)
KR (1) KR20230069128A (https=)
CN (1) CN116114018A (https=)
WO (1) WO2022064308A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116018644A (zh) * 2020-09-06 2023-04-25 株式会社半导体能源研究所 半导体装置及电子设备
WO2024194725A1 (ja) * 2023-03-17 2024-09-26 株式会社半導体エネルギー研究所 半導体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5519234A (en) 1991-02-25 1996-05-21 Symetrix Corporation Ferroelectric dielectric memory cell can switch at least giga cycles and has low fatigue - has high dielectric constant and low leakage current
JP3191550B2 (ja) 1994-02-15 2001-07-23 松下電器産業株式会社 半導体メモリ装置
JP2692610B2 (ja) 1994-09-28 1997-12-17 日本電気株式会社 半導体不揮発性メモリセル及びその動作方法
JPH08273373A (ja) 1995-03-30 1996-10-18 Yamaha Corp 半導体記憶装置とその動作方法
JP3188179B2 (ja) 1995-09-26 2001-07-16 シャープ株式会社 強誘電体薄膜素子の製造方法及び強誘電体メモリ素子の製造方法
JP2939973B2 (ja) 1996-06-06 1999-08-25 日本電気株式会社 不揮発性半導体メモリ装置の駆動方法
JP4256670B2 (ja) 2002-12-10 2009-04-22 富士通株式会社 容量素子、半導体装置およびその製造方法
JP4652087B2 (ja) 2004-03-11 2011-03-16 株式会社半導体エネルギー研究所 半導体装置
JP4114659B2 (ja) * 2004-11-26 2008-07-09 セイコーエプソン株式会社 強誘電体メモリ及びその駆動方法
US7928910B2 (en) 2005-03-31 2011-04-19 Semiconductor Energy Laboratory Co., Ltd. Wireless chip and electronic device having wireless chip
JP2008135136A (ja) 2006-11-29 2008-06-12 Fujitsu Ltd 強誘電体メモリおよび強誘電体メモリの動作方法
CN102742003B (zh) 2010-01-15 2015-01-28 株式会社半导体能源研究所 半导体器件
JP6258672B2 (ja) 2013-11-21 2018-01-10 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
US9685216B2 (en) * 2015-01-24 2017-06-20 Fudan University Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the same
US11121139B2 (en) * 2017-11-16 2021-09-14 International Business Machines Corporation Hafnium oxide and zirconium oxide based ferroelectric devices with textured iridium bottom electrodes
US11171115B2 (en) 2019-03-18 2021-11-09 Kepler Computing Inc. Artificial intelligence processor with three-dimensional stacked memory
US11296708B2 (en) 2019-12-27 2022-04-05 Kepler Computing, Inc. Low power ferroelectric based majority logic gate adder
US11996131B2 (en) * 2022-01-04 2024-05-28 Ferroelectric Memory Gmbh Preconditioning operation for a memory cell with a spontaneously-polarizable memory element

Also Published As

Publication number Publication date
KR20230069128A (ko) 2023-05-18
WO2022064308A1 (ja) 2022-03-31
JP7719087B2 (ja) 2025-08-05
JP2025146893A (ja) 2025-10-03
US12437793B2 (en) 2025-10-07
JPWO2022064308A1 (https=) 2022-03-31
US20240029773A1 (en) 2024-01-25

Similar Documents

Publication Publication Date Title
JP2025146893A (ja) 半導体装置の駆動方法
CN116114019A (zh) 半导体装置及电子设备
CN115867968A (zh) 半导体装置的驱动方法
CN116097358A (zh) 半导体装置及电子设备
JP2025156443A (ja) 半導体装置の駆動方法
JP2026050393A (ja) 半導体装置
JP7711071B2 (ja) 半導体装置、及び電子機器
JP7723677B2 (ja) 半導体装置、及び電子機器
US20250008741A1 (en) Semiconductor device
CN118696612A (zh) 半导体装置以及半导体装置的制造方法
CN118575282A (zh) 半导体装置
WO2022064304A1 (ja) 半導体装置の駆動方法
JP7730833B2 (ja) 半導体装置、および半導体装置の駆動方法
JP7854098B2 (ja) 半導体装置
CN118235535A (zh) 存储元件及存储装置
CN120435923A (zh) 半导体装置
CN118715885A (zh) 半导体装置
CN119769190A (zh) 半导体装置
WO2023047229A1 (ja) 半導体装置、記憶装置、及び電子機器
CN119452754A (zh) 叠层体的制造方法及半导体装置的制造方法
CN118679862A (zh) 半导体装置及半导体装置的制造方法
CN118872402A (zh) 半导体装置及半导体装置的制造方法
CN118749229A (zh) 半导体装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination