JPWO2020166677A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2020166677A5 JPWO2020166677A5 JP2020572319A JP2020572319A JPWO2020166677A5 JP WO2020166677 A5 JPWO2020166677 A5 JP WO2020166677A5 JP 2020572319 A JP2020572319 A JP 2020572319A JP 2020572319 A JP2020572319 A JP 2020572319A JP WO2020166677 A5 JPWO2020166677 A5 JP WO2020166677A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- etching solution
- group
- carbon atoms
- ruthenium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005530 etching Methods 0.000 claims 38
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 37
- 229910052707 ruthenium Inorganic materials 0.000 claims 37
- 125000004432 carbon atom Chemical group C* 0.000 claims 26
- 125000000217 alkyl group Chemical group 0.000 claims 20
- -1 phosphonium ion Chemical class 0.000 claims 18
- 150000003839 salts Chemical class 0.000 claims 14
- 125000003118 aryl group Chemical group 0.000 claims 13
- 150000002500 ions Chemical class 0.000 claims 12
- 239000003960 organic solvent Substances 0.000 claims 10
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 9
- 239000004065 semiconductor Substances 0.000 claims 9
- 235000012431 wafers Nutrition 0.000 claims 9
- 229910052801 chlorine Inorganic materials 0.000 claims 8
- 239000000460 chlorine Substances 0.000 claims 8
- 229910052731 fluorine Inorganic materials 0.000 claims 8
- 239000011737 fluorine Substances 0.000 claims 8
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 6
- 125000003710 aryl alkyl group Chemical group 0.000 claims 6
- 229910052739 hydrogen Inorganic materials 0.000 claims 6
- 239000001257 hydrogen Substances 0.000 claims 6
- ICIWUVCWSCSTAQ-UHFFFAOYSA-M iodate Chemical compound [O-]I(=O)=O ICIWUVCWSCSTAQ-UHFFFAOYSA-M 0.000 claims 6
- 229940005633 iodate ion Drugs 0.000 claims 6
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 5
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 claims 4
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical class CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims 4
- 239000002253 acid Substances 0.000 claims 4
- 125000002723 alicyclic group Chemical group 0.000 claims 4
- 125000003302 alkenyloxy group Chemical group 0.000 claims 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-M Bicarbonate Chemical compound OC([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-M 0.000 claims 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims 3
- 125000003342 alkenyl group Chemical group 0.000 claims 3
- 125000003545 alkoxy group Chemical group 0.000 claims 3
- 150000001450 anions Chemical class 0.000 claims 3
- 125000001153 fluoro group Chemical group F* 0.000 claims 3
- 238000000034 method Methods 0.000 claims 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- 150000004010 onium ions Chemical class 0.000 claims 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 2
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 2
- 229910052794 bromium Inorganic materials 0.000 claims 2
- QBWCMBCROVPCKQ-UHFFFAOYSA-M chlorite Chemical compound [O-]Cl=O QBWCMBCROVPCKQ-UHFFFAOYSA-M 0.000 claims 2
- 229940005993 chlorite ion Drugs 0.000 claims 2
- PNDPGZBMCMUPRI-UHFFFAOYSA-N iodine Chemical compound II PNDPGZBMCMUPRI-UHFFFAOYSA-N 0.000 claims 2
- 239000007800 oxidant agent Substances 0.000 claims 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical group O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims 2
- 239000011593 sulfur Substances 0.000 claims 2
- 229910052717 sulfur Inorganic materials 0.000 claims 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 claims 1
- 150000003863 ammonium salts Chemical group 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 229940005989 chlorate ion Drugs 0.000 claims 1
- 125000001309 chloro group Chemical group Cl* 0.000 claims 1
- KYCIUIVANPKXLW-UHFFFAOYSA-N dimethyl-(2-phenoxyethyl)-(thiophen-2-ylmethyl)azanium Chemical compound C=1C=CSC=1C[N+](C)(C)CCOC1=CC=CC=C1 KYCIUIVANPKXLW-UHFFFAOYSA-N 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- QAOWNCQODCNURD-UHFFFAOYSA-M hydrogensulfate Chemical compound OS([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-M 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 claims 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-M iodide Chemical compound [I-] XMBWDFGMSWQBCA-UHFFFAOYSA-M 0.000 claims 1
- 229940006461 iodide ion Drugs 0.000 claims 1
- 239000007788 liquid Substances 0.000 claims 1
- LRPCLTPZMUIPFK-UHFFFAOYSA-N methane;sulfuric acid Chemical compound C.OS(O)(=O)=O LRPCLTPZMUIPFK-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- 125000004430 oxygen atom Chemical group O* 0.000 claims 1
- VLTRZXGMWDSKGL-UHFFFAOYSA-M perchlorate Chemical compound [O-]Cl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-M 0.000 claims 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 claims 1
- 229940085991 phosphate ion Drugs 0.000 claims 1
- RWSOTUBLDIXVET-UHFFFAOYSA-O sulfonium Chemical compound [SH3+] RWSOTUBLDIXVET-UHFFFAOYSA-O 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021012388A JP7081010B2 (ja) | 2019-02-13 | 2021-01-28 | オニウム塩を含む半導体ウェハの処理液 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019024016 | 2019-02-13 | ||
| JP2019024016 | 2019-02-13 | ||
| JP2019045761 | 2019-03-13 | ||
| JP2019045761 | 2019-03-13 | ||
| JP2019093194 | 2019-05-16 | ||
| JP2019093194 | 2019-05-16 | ||
| JP2019110984 | 2019-06-14 | ||
| JP2019110984 | 2019-06-14 | ||
| PCT/JP2020/005663 WO2020166677A1 (ja) | 2019-02-13 | 2020-02-13 | オニウム塩を含む半導体ウェハの処理液 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021012388A Division JP7081010B2 (ja) | 2019-02-13 | 2021-01-28 | オニウム塩を含む半導体ウェハの処理液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020166677A1 JPWO2020166677A1 (https=) | 2020-08-20 |
| JPWO2020166677A5 true JPWO2020166677A5 (https=) | 2023-10-25 |
| JP7477466B2 JP7477466B2 (ja) | 2024-05-01 |
Family
ID=72044225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020572319A Active JP7477466B2 (ja) | 2019-02-13 | 2020-02-13 | オニウム塩を含む半導体ウェハの処理液 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US12024663B2 (https=) |
| EP (1) | EP3926662B1 (https=) |
| JP (1) | JP7477466B2 (https=) |
| KR (1) | KR102820838B1 (https=) |
| CN (1) | CN113383408B (https=) |
| SG (1) | SG11202108772PA (https=) |
| TW (1) | TWI904082B (https=) |
| WO (1) | WO2020166677A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020256007A1 (ja) * | 2019-06-21 | 2020-12-24 | 株式会社トクヤマ | 酸化ルテニウムガスの吸収液、酸化ルテニウムの分析方法およびトラップ装置、定量分析装置 |
| WO2021210308A1 (ja) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 洗浄液、洗浄方法 |
| WO2021210310A1 (ja) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 処理液、化学的機械的研磨方法、半導体基板の処理方法 |
| WO2022050273A1 (ja) * | 2020-09-03 | 2022-03-10 | 富士フイルム株式会社 | 組成物、基板の処理方法 |
| JP7819114B2 (ja) * | 2020-11-26 | 2026-02-24 | 株式会社トクヤマ | 半導体ウェハの処理液及びその製造方法 |
| WO2022138561A1 (ja) * | 2020-12-25 | 2022-06-30 | 株式会社トクヤマ | 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液 |
| JPWO2023190984A1 (https=) * | 2022-03-31 | 2023-10-05 | ||
| JP7809031B2 (ja) * | 2022-08-22 | 2026-01-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
Family Cites Families (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314019B2 (https=) | 1972-12-20 | 1978-05-15 | ||
| JPS5650112Y2 (https=) | 1976-07-16 | 1981-11-24 | ||
| JP3690837B2 (ja) * | 1995-05-02 | 2005-08-31 | 株式会社荏原製作所 | ポリッシング装置及び方法 |
| US6143192A (en) | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
| TW490756B (en) | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3585437B2 (ja) * | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| US6498110B2 (en) * | 2001-03-05 | 2002-12-24 | Micron Technology, Inc. | Ruthenium silicide wet etch |
| JP4043234B2 (ja) | 2001-06-18 | 2008-02-06 | 株式会社荏原製作所 | 電解加工装置及び基板処理装置 |
| JP3833139B2 (ja) * | 2002-04-26 | 2006-10-11 | 株式会社荏原製作所 | 電解加工装置 |
| WO2006087099A1 (en) * | 2005-02-16 | 2006-08-24 | Unilever N.V. | Aqueous liquid bleach compositions |
| WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| US20090212021A1 (en) * | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
| WO2008129891A1 (ja) | 2007-04-13 | 2008-10-30 | Tosoh Corporation | エッチング用組成物及びエッチング方法 |
| JP4552968B2 (ja) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板 |
| US8008202B2 (en) | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| CN101802911B (zh) * | 2007-09-14 | 2013-01-02 | 花王株式会社 | 用于垂直磁记录方式硬盘用基板的水系洗涤剂组合物 |
| KR100980607B1 (ko) * | 2007-11-08 | 2010-09-07 | 주식회사 하이닉스반도체 | 루테늄 연마용 슬러리 및 그를 이용한 연마 방법 |
| JP4848402B2 (ja) * | 2008-08-20 | 2011-12-28 | ルネサスエレクトロニクス株式会社 | 半導体集積回路装置の製造方法 |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| WO2013099955A1 (ja) * | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | 半導体基板製品の製造方法及びこれに利用されるエッチング方法 |
| US10472567B2 (en) | 2013-03-04 | 2019-11-12 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| WO2016068183A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| TWI654288B (zh) * | 2015-01-12 | 2019-03-21 | 美商慧盛材料美國責任有限公司 | 用於化學機械平坦化組合物之複合硏磨粒及其使用方法 |
| WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Ｃｍｐ用研磨液、及び、これを用いた研磨方法 |
| JP6747432B2 (ja) * | 2015-04-13 | 2020-08-26 | 三菱瓦斯化学株式会社 | ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| JP6761166B2 (ja) | 2015-07-23 | 2020-09-23 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
| JP6966570B2 (ja) * | 2017-04-11 | 2021-11-17 | インテグリス・インコーポレーテッド | 化学機械研磨後配合物及び使用方法 |
| CN107976354A (zh) * | 2017-11-22 | 2018-05-01 | 中山市创艺生化工程有限公司 | 一种血细胞分析仪用试剂 |
| JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
| US11346008B2 (en) | 2018-12-14 | 2022-05-31 | Entegris, Inc. | Ruthenium etching composition and method |
-
2020
- 2020-02-13 WO PCT/JP2020/005663 patent/WO2020166677A1/ja not_active Ceased
- 2020-02-13 SG SG11202108772PA patent/SG11202108772PA/en unknown
- 2020-02-13 KR KR1020217022555A patent/KR102820838B1/ko active Active
- 2020-02-13 TW TW109104611A patent/TWI904082B/zh active
- 2020-02-13 US US17/419,058 patent/US12024663B2/en active Active
- 2020-02-13 EP EP20756178.8A patent/EP3926662B1/en active Active
- 2020-02-13 CN CN202080012317.0A patent/CN113383408B/zh active Active
- 2020-02-13 JP JP2020572319A patent/JP7477466B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2020166677A5 (https=) | ||
| US10734664B1 (en) | Purified hydrogen bis(fluorosulfonyl)imide (HFSI) products, methods of purifying crude HFSI, and uses of purified HFSI products | |
| Zhdankin | Hypervalent iodine chemistry: preparation, structure, and synthetic applications of polyvalent iodine compounds | |
| US9233849B2 (en) | Process for producing fluorine-containing sulfonylimide salt | |
| KR102784165B1 (ko) | 루테늄의 반도체용 처리액 및 그 제조 방법 | |
| KR102820838B1 (ko) | 오늄염을 포함하는 반도체 웨이퍼의 처리액 | |
| JP7627686B2 (ja) | 半導体用処理液及びその製造方法 | |
| JP2015531744A (ja) | ビス（フルオロスルホニル）イミドの合成 | |
| JP7375032B2 (ja) | 半導体ウエハ用処理液 | |
| JPWO2022030627A5 (https=) | ||
| US10926190B2 (en) | Purified lithium bis(fluorosulfonyl)imide (LiFSI) products, methods of purifying crude LiFSI, and uses of purified LiFSI products | |
| JP6691740B2 (ja) | フルオロスルホニルイミド化合物の製造方法 | |
| JP2014122185A (ja) | 有機化合物を配位子とするイオン性金属錯体塩の製造方法 | |
| KR20230048015A (ko) | 차아브롬산 이온 및 pH 완충제를 함유하는 반도체 웨이퍼의 처리액 | |
| JP4002254B2 (ja) | 水素化ホウ素のフッ素化プロセス | |
| US12247298B2 (en) | Semiconductor wafer treatment liquid and production method thereof | |
| WO2020209018A1 (ja) | アルカリ金属ビス（フルオロスルホニル）イミド水溶液、水溶液入り容器、及び当該水溶液の保管又は輸送方法 | |
| WO2012026360A1 (ja) | ビス（フルオロスルホニル）イミドの製造方法 | |
| JP2018162169A (ja) | シアノフルオロホウ酸塩の製造方法 | |
| CN109982567B (zh) | 水处理剂组合物、水处理方法及水处理剂组合物的保管或使用方法 | |
| JP2016027030A (ja) | 精製イオン性錯体の製造方法 | |
| TWI920121B (zh) | 半導體晶圓用處理液 | |
| JPWO2022030628A5 (https=) | ||
| JP2016027029A (ja) | 精製イオン性錯体の製造方法及びイオン性錯体 | |
| JP2012001508A (ja) | オレフィンクロロヒドリン系化合物の製造方法 |