JPWO2020166677A1 - - Google Patents
Info
- Publication number
- JPWO2020166677A1 JPWO2020166677A1 JP2020572319A JP2020572319A JPWO2020166677A1 JP WO2020166677 A1 JPWO2020166677 A1 JP WO2020166677A1 JP 2020572319 A JP2020572319 A JP 2020572319A JP 2020572319 A JP2020572319 A JP 2020572319A JP WO2020166677 A1 JPWO2020166677 A1 JP WO2020166677A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C211/00—Compounds containing amino groups bound to a carbon skeleton
- C07C211/62—Quaternary ammonium compounds
- C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
- C07C381/12—Sulfonium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
- C07F9/02—Phosphorus compounds
- C07F9/28—Phosphorus compounds with one or more P—C bonds
- C07F9/54—Quaternary phosphonium compounds
- C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/40—Alkaline compositions for etching other metallic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/60—Wet etching
- H10P50/66—Wet etching of conductive or resistive materials
- H10P50/663—Wet etching of conductive or resistive materials by chemical means only
- H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
- H10W20/44—Conductive materials thereof
- H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
- H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Weting (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021012388A JP7081010B2 (ja) | 2019-02-13 | 2021-01-28 | オニウム塩を含む半導体ウェハの処理液 |
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019024016 | 2019-02-13 | ||
| JP2019024016 | 2019-02-13 | ||
| JP2019045761 | 2019-03-13 | ||
| JP2019045761 | 2019-03-13 | ||
| JP2019093194 | 2019-05-16 | ||
| JP2019093194 | 2019-05-16 | ||
| JP2019110984 | 2019-06-14 | ||
| JP2019110984 | 2019-06-14 | ||
| PCT/JP2020/005663 WO2020166677A1 (ja) | 2019-02-13 | 2020-02-13 | オニウム塩を含む半導体ウェハの処理液 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021012388A Division JP7081010B2 (ja) | 2019-02-13 | 2021-01-28 | オニウム塩を含む半導体ウェハの処理液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2020166677A1 true JPWO2020166677A1 (https=) | 2020-08-20 |
| JPWO2020166677A5 JPWO2020166677A5 (https=) | 2023-10-25 |
| JP7477466B2 JP7477466B2 (ja) | 2024-05-01 |
Family
ID=72044225
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020572319A Active JP7477466B2 (ja) | 2019-02-13 | 2020-02-13 | オニウム塩を含む半導体ウェハの処理液 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US12024663B2 (https=) |
| EP (1) | EP3926662B1 (https=) |
| JP (1) | JP7477466B2 (https=) |
| KR (1) | KR102820838B1 (https=) |
| CN (1) | CN113383408B (https=) |
| SG (1) | SG11202108772PA (https=) |
| TW (1) | TWI904082B (https=) |
| WO (1) | WO2020166677A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020256007A1 (ja) * | 2019-06-21 | 2020-12-24 | 株式会社トクヤマ | 酸化ルテニウムガスの吸収液、酸化ルテニウムの分析方法およびトラップ装置、定量分析装置 |
| WO2021210308A1 (ja) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 洗浄液、洗浄方法 |
| WO2021210310A1 (ja) * | 2020-04-16 | 2021-10-21 | 富士フイルムエレクトロニクスマテリアルズ株式会社 | 処理液、化学的機械的研磨方法、半導体基板の処理方法 |
| WO2022050273A1 (ja) * | 2020-09-03 | 2022-03-10 | 富士フイルム株式会社 | 組成物、基板の処理方法 |
| JP7819114B2 (ja) * | 2020-11-26 | 2026-02-24 | 株式会社トクヤマ | 半導体ウェハの処理液及びその製造方法 |
| WO2022138561A1 (ja) * | 2020-12-25 | 2022-06-30 | 株式会社トクヤマ | 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液 |
| JPWO2023190984A1 (https=) * | 2022-03-31 | 2023-10-05 | ||
| JP7809031B2 (ja) * | 2022-08-22 | 2026-01-30 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法および基板処理装置 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003324091A (ja) * | 2002-04-26 | 2003-11-14 | Ebara Corp | 電解加工方法及び装置 |
| JP2009016854A (ja) * | 2008-08-20 | 2009-01-22 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| WO2016068183A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| JP2017028257A (ja) * | 2015-07-23 | 2017-02-02 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5314019B2 (https=) | 1972-12-20 | 1978-05-15 | ||
| JPS5650112Y2 (https=) | 1976-07-16 | 1981-11-24 | ||
| JP3690837B2 (ja) * | 1995-05-02 | 2005-08-31 | 株式会社荏原製作所 | ポリッシング装置及び方法 |
| US6143192A (en) | 1998-09-03 | 2000-11-07 | Micron Technology, Inc. | Ruthenium and ruthenium dioxide removal method and material |
| TW490756B (en) | 1999-08-31 | 2002-06-11 | Hitachi Ltd | Method for mass production of semiconductor integrated circuit device and manufacturing method of electronic components |
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3585437B2 (ja) * | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| US6498110B2 (en) * | 2001-03-05 | 2002-12-24 | Micron Technology, Inc. | Ruthenium silicide wet etch |
| JP4043234B2 (ja) | 2001-06-18 | 2008-02-06 | 株式会社荏原製作所 | 電解加工装置及び基板処理装置 |
| WO2006087099A1 (en) * | 2005-02-16 | 2006-08-24 | Unilever N.V. | Aqueous liquid bleach compositions |
| WO2006110279A1 (en) * | 2005-04-08 | 2006-10-19 | Sachem, Inc. | Selective wet etching of metal nitrides |
| US20090212021A1 (en) * | 2005-06-13 | 2009-08-27 | Advanced Technology Materials, Inc. | Compositions and methods for selective removal of metal or metal alloy after metal silicide formation |
| KR100827591B1 (ko) * | 2006-11-27 | 2008-05-07 | 제일모직주식회사 | 화학적 기계적 연마용 슬러리 조성물 및 그 전구체 조성물 |
| WO2008129891A1 (ja) | 2007-04-13 | 2008-10-30 | Tosoh Corporation | エッチング用組成物及びエッチング方法 |
| JP4552968B2 (ja) * | 2007-05-29 | 2010-09-29 | 住友電気工業株式会社 | 化合物半導体基板の研磨方法、化合物半導体基板、化合物半導体エピ基板の製造方法および化合物半導体エピ基板 |
| US8008202B2 (en) | 2007-08-01 | 2011-08-30 | Cabot Microelectronics Corporation | Ruthenium CMP compositions and methods |
| CN101802911B (zh) * | 2007-09-14 | 2013-01-02 | 花王株式会社 | 用于垂直磁记录方式硬盘用基板的水系洗涤剂组合物 |
| KR100980607B1 (ko) * | 2007-11-08 | 2010-09-07 | 주식회사 하이닉스반도체 | 루테늄 연마용 슬러리 및 그를 이용한 연마 방법 |
| WO2011074601A1 (ja) * | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| WO2013099955A1 (ja) * | 2011-12-27 | 2013-07-04 | 富士フイルム株式会社 | 半導体基板製品の製造方法及びこれに利用されるエッチング方法 |
| US10472567B2 (en) | 2013-03-04 | 2019-11-12 | Entegris, Inc. | Compositions and methods for selectively etching titanium nitride |
| TWI654288B (zh) * | 2015-01-12 | 2019-03-21 | 美商慧盛材料美國責任有限公司 | 用於化學機械平坦化組合物之複合硏磨粒及其使用方法 |
| WO2016140246A1 (ja) * | 2015-03-04 | 2016-09-09 | 日立化成株式会社 | Ｃｍｐ用研磨液、及び、これを用いた研磨方法 |
| JP6747432B2 (ja) * | 2015-04-13 | 2020-08-26 | 三菱瓦斯化学株式会社 | ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法 |
| US9976111B2 (en) | 2015-05-01 | 2018-05-22 | Versum Materials Us, Llc | TiN hard mask and etch residual removal |
| JP6966570B2 (ja) * | 2017-04-11 | 2021-11-17 | インテグリス・インコーポレーテッド | 化学機械研磨後配合物及び使用方法 |
| CN107976354A (zh) * | 2017-11-22 | 2018-05-01 | 中山市创艺生化工程有限公司 | 一种血细胞分析仪用试剂 |
| JP7219061B2 (ja) | 2018-11-14 | 2023-02-07 | 関東化学株式会社 | ルテニウム除去用組成物 |
| US11346008B2 (en) | 2018-12-14 | 2022-05-31 | Entegris, Inc. | Ruthenium etching composition and method |
-
2020
- 2020-02-13 WO PCT/JP2020/005663 patent/WO2020166677A1/ja not_active Ceased
- 2020-02-13 SG SG11202108772PA patent/SG11202108772PA/en unknown
- 2020-02-13 KR KR1020217022555A patent/KR102820838B1/ko active Active
- 2020-02-13 TW TW109104611A patent/TWI904082B/zh active
- 2020-02-13 US US17/419,058 patent/US12024663B2/en active Active
- 2020-02-13 EP EP20756178.8A patent/EP3926662B1/en active Active
- 2020-02-13 CN CN202080012317.0A patent/CN113383408B/zh active Active
- 2020-02-13 JP JP2020572319A patent/JP7477466B2/ja active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003324091A (ja) * | 2002-04-26 | 2003-11-14 | Ebara Corp | 電解加工方法及び装置 |
| JP2009016854A (ja) * | 2008-08-20 | 2009-01-22 | Renesas Technology Corp | 半導体集積回路装置の製造方法 |
| WO2016068183A1 (ja) * | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| JP2017028257A (ja) * | 2015-07-23 | 2017-02-02 | セントラル硝子株式会社 | ウェットエッチング方法及びエッチング液 |
Also Published As
| Publication number | Publication date |
|---|---|
| SG11202108772PA (en) | 2021-09-29 |
| JP7477466B2 (ja) | 2024-05-01 |
| KR102820838B1 (ko) | 2025-06-13 |
| KR20210127920A (ko) | 2021-10-25 |
| US12024663B2 (en) | 2024-07-02 |
| TWI904082B (zh) | 2025-11-11 |
| CN113383408B (zh) | 2025-04-08 |
| CN113383408A (zh) | 2021-09-10 |
| WO2020166677A1 (ja) | 2020-08-20 |
| US20220073820A1 (en) | 2022-03-10 |
| EP3926662A4 (en) | 2023-01-11 |
| EP3926662B1 (en) | 2025-04-30 |
| TW202035355A (zh) | 2020-10-01 |
| EP3926662A1 (en) | 2021-12-22 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230213 |
|
| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20230213 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20231017 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231219 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240215 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240319 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240418 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 7477466 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |