JP7477466B2 - オニウム塩を含む半導体ウェハの処理液 - Google Patents

オニウム塩を含む半導体ウェハの処理液 Download PDF

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JP7477466B2
JP7477466B2 JP2020572319A JP2020572319A JP7477466B2 JP 7477466 B2 JP7477466 B2 JP 7477466B2 JP 2020572319 A JP2020572319 A JP 2020572319A JP 2020572319 A JP2020572319 A JP 2020572319A JP 7477466 B2 JP7477466 B2 JP 7477466B2
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ion
ruthenium
carbon atoms
treatment liquid
treatment
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JPWO2020166677A5 (https=
JPWO2020166677A1 (https=
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由樹 吉川
伴光 佐藤
享史 下田
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
JP2020572319A 2019-02-13 2020-02-13 オニウム塩を含む半導体ウェハの処理液 Active JP7477466B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021012388A JP7081010B2 (ja) 2019-02-13 2021-01-28 オニウム塩を含む半導体ウェハの処理液

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2019024016 2019-02-13
JP2019024016 2019-02-13
JP2019045761 2019-03-13
JP2019045761 2019-03-13
JP2019093194 2019-05-16
JP2019093194 2019-05-16
JP2019110984 2019-06-14
JP2019110984 2019-06-14
PCT/JP2020/005663 WO2020166677A1 (ja) 2019-02-13 2020-02-13 オニウム塩を含む半導体ウェハの処理液

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JPWO2020166677A1 JPWO2020166677A1 (https=) 2020-08-20
JPWO2020166677A5 JPWO2020166677A5 (https=) 2023-10-25
JP7477466B2 true JP7477466B2 (ja) 2024-05-01

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US (1) US12024663B2 (https=)
EP (1) EP3926662B1 (https=)
JP (1) JP7477466B2 (https=)
KR (1) KR102820838B1 (https=)
CN (1) CN113383408B (https=)
SG (1) SG11202108772PA (https=)
TW (1) TWI904082B (https=)
WO (1) WO2020166677A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020256007A1 (ja) * 2019-06-21 2020-12-24 株式会社トクヤマ 酸化ルテニウムガスの吸収液、酸化ルテニウムの分析方法およびトラップ装置、定量分析装置
WO2021210308A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
WO2022050273A1 (ja) * 2020-09-03 2022-03-10 富士フイルム株式会社 組成物、基板の処理方法
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
WO2022138561A1 (ja) * 2020-12-25 2022-06-30 株式会社トクヤマ 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液
JPWO2023190984A1 (https=) * 2022-03-31 2023-10-05
JP7809031B2 (ja) * 2022-08-22 2026-01-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP2017028257A (ja) 2015-07-23 2017-02-02 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液

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JP2009016854A (ja) 2008-08-20 2009-01-22 Renesas Technology Corp 半導体集積回路装置の製造方法
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP2017028257A (ja) 2015-07-23 2017-02-02 セントラル硝子株式会社 ウェットエッチング方法及びエッチング液

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SG11202108772PA (en) 2021-09-29
KR102820838B1 (ko) 2025-06-13
KR20210127920A (ko) 2021-10-25
US12024663B2 (en) 2024-07-02
TWI904082B (zh) 2025-11-11
CN113383408B (zh) 2025-04-08
CN113383408A (zh) 2021-09-10
JPWO2020166677A1 (https=) 2020-08-20
WO2020166677A1 (ja) 2020-08-20
US20220073820A1 (en) 2022-03-10
EP3926662A4 (en) 2023-01-11
EP3926662B1 (en) 2025-04-30
TW202035355A (zh) 2020-10-01
EP3926662A1 (en) 2021-12-22

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