TWI904082B - 含有鎓鹽的半導體晶圓之處理液 - Google Patents

含有鎓鹽的半導體晶圓之處理液

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Publication number
TWI904082B
TWI904082B TW109104611A TW109104611A TWI904082B TW I904082 B TWI904082 B TW I904082B TW 109104611 A TW109104611 A TW 109104611A TW 109104611 A TW109104611 A TW 109104611A TW I904082 B TWI904082 B TW I904082B
Authority
TW
Taiwan
Prior art keywords
ions
ruthenium
carbon atoms
ruo4
ion
Prior art date
Application number
TW109104611A
Other languages
English (en)
Chinese (zh)
Other versions
TW202035355A (zh
Inventor
吉川由樹
佐藤伴光
下田享史
根岸貴幸
Original Assignee
日商德山股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商德山股份有限公司 filed Critical 日商德山股份有限公司
Publication of TW202035355A publication Critical patent/TW202035355A/zh
Application granted granted Critical
Publication of TWI904082B publication Critical patent/TWI904082B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C211/00—Compounds containing amino groups bound to a carbon skeleton
    • C07C211/62—Quaternary ammonium compounds
    • C07C211/63—Quaternary ammonium compounds having quaternised nitrogen atoms bound to acyclic carbon atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
    • C07F9/02—Phosphorus compounds
    • C07F9/28—Phosphorus compounds with one or more P—C bonds
    • C07F9/54—Quaternary phosphonium compounds
    • C07F9/5442—Aromatic phosphonium compounds (P-C aromatic linkage)
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/44—Conductive materials thereof
    • H10W20/4403—Conductive materials thereof based on metals, e.g. alloys, metal silicides
    • H10W20/4432—Conductive materials thereof based on metals, e.g. alloys, metal silicides the principal metal being a noble metal, e.g. gold

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW109104611A 2019-02-13 2020-02-13 含有鎓鹽的半導體晶圓之處理液 TWI904082B (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2019-024016 2019-02-13
JP2019024016 2019-02-13
JP2019045761 2019-03-13
JP2019-045761 2019-03-13
JP2019093194 2019-05-16
JP2019-093194 2019-05-16
JP2019-110984 2019-06-14
JP2019110984 2019-06-14

Publications (2)

Publication Number Publication Date
TW202035355A TW202035355A (zh) 2020-10-01
TWI904082B true TWI904082B (zh) 2025-11-11

Family

ID=72044225

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109104611A TWI904082B (zh) 2019-02-13 2020-02-13 含有鎓鹽的半導體晶圓之處理液

Country Status (8)

Country Link
US (1) US12024663B2 (https=)
EP (1) EP3926662B1 (https=)
JP (1) JP7477466B2 (https=)
KR (1) KR102820838B1 (https=)
CN (1) CN113383408B (https=)
SG (1) SG11202108772PA (https=)
TW (1) TWI904082B (https=)
WO (1) WO2020166677A1 (https=)

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WO2020256007A1 (ja) * 2019-06-21 2020-12-24 株式会社トクヤマ 酸化ルテニウムガスの吸収液、酸化ルテニウムの分析方法およびトラップ装置、定量分析装置
WO2021210308A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 洗浄液、洗浄方法
WO2021210310A1 (ja) * 2020-04-16 2021-10-21 富士フイルムエレクトロニクスマテリアルズ株式会社 処理液、化学的機械的研磨方法、半導体基板の処理方法
WO2022050273A1 (ja) * 2020-09-03 2022-03-10 富士フイルム株式会社 組成物、基板の処理方法
JP7819114B2 (ja) * 2020-11-26 2026-02-24 株式会社トクヤマ 半導体ウェハの処理液及びその製造方法
WO2022138561A1 (ja) * 2020-12-25 2022-06-30 株式会社トクヤマ 遷移金属を含む半導体の処理方法、遷移金属を含む半導体の製造方法、および半導体用処理液
JPWO2023190984A1 (https=) * 2022-03-31 2023-10-05
JP7809031B2 (ja) * 2022-08-22 2026-01-30 株式会社Ｓｃｒｅｅｎホールディングス 基板処理方法および基板処理装置

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TWI425120B (zh) * 2009-12-17 2014-02-01 昭和電工股份有限公司 Compositions for etching of ruthenium-based metals and methods for their preparation
TW201723163A (zh) * 2015-04-13 2017-07-01 三菱瓦斯化學股份有限公司 晶圓再生用的包含含碳之矽氧化物的材料之清洗液及清洗方法

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CN101248516A (zh) * 2005-04-08 2008-08-20 塞克姆公司 金属氮化物的选择性湿蚀刻
TWI425120B (zh) * 2009-12-17 2014-02-01 昭和電工股份有限公司 Compositions for etching of ruthenium-based metals and methods for their preparation
TW201723163A (zh) * 2015-04-13 2017-07-01 三菱瓦斯化學股份有限公司 晶圓再生用的包含含碳之矽氧化物的材料之清洗液及清洗方法

Also Published As

Publication number Publication date
SG11202108772PA (en) 2021-09-29
JP7477466B2 (ja) 2024-05-01
KR102820838B1 (ko) 2025-06-13
KR20210127920A (ko) 2021-10-25
US12024663B2 (en) 2024-07-02
CN113383408B (zh) 2025-04-08
CN113383408A (zh) 2021-09-10
JPWO2020166677A1 (https=) 2020-08-20
WO2020166677A1 (ja) 2020-08-20
US20220073820A1 (en) 2022-03-10
EP3926662A4 (en) 2023-01-11
EP3926662B1 (en) 2025-04-30
TW202035355A (zh) 2020-10-01
EP3926662A1 (en) 2021-12-22

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