JPWO2022030627A5 - - Google Patents
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- Publication number
- JPWO2022030627A5 JPWO2022030627A5 JP2021551588A JP2021551588A JPWO2022030627A5 JP WO2022030627 A5 JPWO2022030627 A5 JP WO2022030627A5 JP 2021551588 A JP2021551588 A JP 2021551588A JP 2021551588 A JP2021551588 A JP 2021551588A JP WO2022030627 A5 JPWO2022030627 A5 JP WO2022030627A5
- Authority
- JP
- Japan
- Prior art keywords
- ion
- semiconductor wafer
- bromide
- processing liquid
- concentration
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000004065 semiconductor Substances 0.000 claims 22
- 235000012431 wafers Nutrition 0.000 claims 22
- 239000007788 liquid Substances 0.000 claims 15
- 150000002500 ions Chemical class 0.000 claims 12
- -1 hypobromous acid ion Chemical class 0.000 claims 6
- 239000000126 substance Substances 0.000 claims 6
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims 5
- 125000005210 alkyl ammonium group Chemical group 0.000 claims 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims 5
- 229910052794 bromium Inorganic materials 0.000 claims 5
- 125000000217 alkyl group Chemical group 0.000 claims 4
- 125000004432 carbon atom Chemical group C* 0.000 claims 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 4
- 238000004519 manufacturing process Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- KHIWWQKSHDUIBK-UHFFFAOYSA-M periodate Chemical compound [O-]I(=O)(=O)=O KHIWWQKSHDUIBK-UHFFFAOYSA-M 0.000 claims 4
- 238000005530 etching Methods 0.000 claims 3
- UMSGVWVBUHUHEH-UHFFFAOYSA-M ethyl(trimethyl)azanium;bromide Chemical compound [Br-].CC[N+](C)(C)C UMSGVWVBUHUHEH-UHFFFAOYSA-M 0.000 claims 3
- WQYVRQLZKVEZGA-UHFFFAOYSA-N hypochlorite Chemical compound Cl[O-] WQYVRQLZKVEZGA-UHFFFAOYSA-N 0.000 claims 3
- JRMUNVKIHCOMHV-UHFFFAOYSA-M tetrabutylammonium bromide Chemical compound [Br-].CCCC[N+](CCCC)(CCCC)CCCC JRMUNVKIHCOMHV-UHFFFAOYSA-M 0.000 claims 3
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 claims 3
- DDFYFBUWEBINLX-UHFFFAOYSA-M tetramethylammonium bromide Chemical compound [Br-].C[N+](C)(C)C DDFYFBUWEBINLX-UHFFFAOYSA-M 0.000 claims 3
- BGQMOFGZRJUORO-UHFFFAOYSA-M tetrapropylammonium bromide Chemical compound [Br-].CCC[N+](CCC)(CCC)CCC BGQMOFGZRJUORO-UHFFFAOYSA-M 0.000 claims 3
- 229910052723 transition metal Inorganic materials 0.000 claims 3
- 150000003624 transition metals Chemical class 0.000 claims 3
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims 2
- 150000003863 ammonium salts Chemical class 0.000 claims 2
- VDZOOKBUILJEDG-UHFFFAOYSA-M tetrabutylammonium hydroxide Chemical compound [OH-].CCCC[N+](CCCC)(CCCC)CCCC VDZOOKBUILJEDG-UHFFFAOYSA-M 0.000 claims 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 claims 1
- XTEGARKTQYYJKE-UHFFFAOYSA-M Chlorate Chemical compound [O-]Cl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-M 0.000 claims 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229940005989 chlorate ion Drugs 0.000 claims 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 claims 1
- YOMFVLRTMZWACQ-UHFFFAOYSA-N ethyltrimethylammonium Chemical compound CC[N+](C)(C)C YOMFVLRTMZWACQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 claims 1
- JGJLWPGRMCADHB-UHFFFAOYSA-N hypobromite Inorganic materials Br[O-] JGJLWPGRMCADHB-UHFFFAOYSA-N 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- DZLFLBLQUQXARW-UHFFFAOYSA-N tetrabutylammonium Chemical compound CCCC[N+](CCCC)(CCCC)CCCC DZLFLBLQUQXARW-UHFFFAOYSA-N 0.000 claims 1
- CBXCPBUEXACCNR-UHFFFAOYSA-N tetraethylammonium Chemical compound CC[N+](CC)(CC)CC CBXCPBUEXACCNR-UHFFFAOYSA-N 0.000 claims 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 claims 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 claims 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 claims 1
- LPSKDVINWQNWFE-UHFFFAOYSA-M tetrapropylazanium;hydroxide Chemical compound [OH-].CCC[N+](CCC)(CCC)CCC LPSKDVINWQNWFE-UHFFFAOYSA-M 0.000 claims 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2022113534A JP7735233B2 (ja) | 2020-08-07 | 2022-07-14 | 半導体ウエハ用処理液 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020134514 | 2020-08-07 | ||
| JP2020134514 | 2020-08-07 | ||
| JP2021054202 | 2021-03-26 | ||
| JP2021054202 | 2021-03-26 | ||
| PCT/JP2021/029371 WO2022030627A1 (ja) | 2020-08-07 | 2021-08-06 | 半導体ウエハ用処理液 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022113534A Division JP7735233B2 (ja) | 2020-08-07 | 2022-07-14 | 半導体ウエハ用処理液 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2022030627A1 JPWO2022030627A1 (https=) | 2022-02-10 |
| JPWO2022030627A5 true JPWO2022030627A5 (https=) | 2022-07-19 |
| JP7375032B2 JP7375032B2 (ja) | 2023-11-07 |
Family
ID=80118121
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021551588A Active JP7375032B2 (ja) | 2020-08-07 | 2021-08-06 | 半導体ウエハ用処理液 |
| JP2022113534A Active JP7735233B2 (ja) | 2020-08-07 | 2022-07-14 | 半導体ウエハ用処理液 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2022113534A Active JP7735233B2 (ja) | 2020-08-07 | 2022-07-14 | 半導体ウエハ用処理液 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US12195658B2 (https=) |
| JP (2) | JP7375032B2 (https=) |
| KR (1) | KR20230048318A (https=) |
| CN (1) | CN116057208A (https=) |
| WO (1) | WO2022030627A1 (https=) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6874231B1 (ja) * | 2019-09-27 | 2021-05-19 | 株式会社トクヤマ | ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法 |
| WO2022024636A1 (ja) * | 2020-07-31 | 2022-02-03 | 富士フイルム株式会社 | 薬液、薬液収容体、基板の処理方法 |
| US12444617B2 (en) * | 2020-08-07 | 2025-10-14 | Tokuyama Corporation | Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent |
| KR20230128967A (ko) * | 2022-02-28 | 2023-09-05 | 동우 화인켐 주식회사 | 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판 |
| US20250084309A1 (en) * | 2022-10-03 | 2025-03-13 | Tokuyama Corporation | Semiconductor processing solution |
| CN116606002A (zh) * | 2023-04-24 | 2023-08-18 | 西安热工研究院有限公司 | 一种抑制直接空冷机组空冷岛运行腐蚀的方法 |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL284777A (https=) * | 1961-10-28 | |||
| JP4510979B2 (ja) | 2000-02-23 | 2010-07-28 | ルネサスエレクトロニクス株式会社 | ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法 |
| JP3585437B2 (ja) | 2000-11-22 | 2004-11-04 | 株式会社荏原製作所 | ルテニウム膜のエッチング方法 |
| JP4355201B2 (ja) | 2003-12-02 | 2009-10-28 | 関東化学株式会社 | タングステン金属除去液及びそれを用いたタングステン金属の除去方法 |
| WO2011074601A1 (ja) | 2009-12-17 | 2011-06-23 | 昭和電工株式会社 | ルテニウム系金属のエッチング用組成物およびその調製方法 |
| KR102102792B1 (ko) * | 2011-12-28 | 2020-05-29 | 엔테그리스, 아이엔씨. | 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법 |
| KR102069158B1 (ko) | 2012-05-10 | 2020-01-22 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법 |
| WO2014055281A1 (en) * | 2012-10-01 | 2014-04-10 | Dow Global Technologies Llc | Compositions and processes for mesoporous silicas having large pores with narrow diameter distributions |
| WO2014115758A1 (ja) * | 2013-01-24 | 2014-07-31 | 昭和電工株式会社 | エッチング液 |
| KR102338550B1 (ko) * | 2013-06-06 | 2021-12-14 | 엔테그리스, 아이엔씨. | 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법 |
| SG11201510744VA (en) * | 2013-07-05 | 2016-01-28 | Wako Pure Chem Ind Ltd | Etching agent, etching method and etching agent preparation liquid |
| WO2016068183A1 (ja) | 2014-10-31 | 2016-05-06 | 富士フイルム株式会社 | ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法 |
| JP6501492B2 (ja) * | 2014-10-31 | 2019-04-17 | 関東化學株式会社 | フォトレジスト残渣および／またはポリマー残渣を除去するための組成物 |
| JP6747432B2 (ja) * | 2015-04-13 | 2020-08-26 | 三菱瓦斯化学株式会社 | ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法 |
| MY199974A (en) | 2017-03-31 | 2023-12-01 | Kanto Kagaku | Etchant composition for etching titanium layer or titanium-containing layer, and etching method |
| JP2019054121A (ja) * | 2017-09-15 | 2019-04-04 | 攝津製油株式会社 | エッチング液 |
| CN111684570B (zh) | 2018-01-16 | 2024-02-27 | 株式会社德山 | 含有次氯酸根离子的半导体晶圆的处理液 |
| US11346008B2 (en) * | 2018-12-14 | 2022-05-31 | Entegris, Inc. | Ruthenium etching composition and method |
-
2021
- 2021-08-06 JP JP2021551588A patent/JP7375032B2/ja active Active
- 2021-08-06 US US17/636,539 patent/US12195658B2/en active Active
- 2021-08-06 CN CN202180058168.6A patent/CN116057208A/zh active Pending
- 2021-08-06 KR KR1020237003791A patent/KR20230048318A/ko active Pending
- 2021-08-06 WO PCT/JP2021/029371 patent/WO2022030627A1/ja not_active Ceased
-
2022
- 2022-07-14 JP JP2022113534A patent/JP7735233B2/ja active Active
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