KR20230048318A - 반도체 웨이퍼용 처리액 - Google Patents

반도체 웨이퍼용 처리액 Download PDF

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Publication number
KR20230048318A
KR20230048318A KR1020237003791A KR20237003791A KR20230048318A KR 20230048318 A KR20230048318 A KR 20230048318A KR 1020237003791 A KR1020237003791 A KR 1020237003791A KR 20237003791 A KR20237003791 A KR 20237003791A KR 20230048318 A KR20230048318 A KR 20230048318A
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KR
South Korea
Prior art keywords
ion
bromide
treatment liquid
ions
bromine
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020237003791A
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English (en)
Korean (ko)
Inventor
유키 깃카와
도모아키 사토
다카후미 시모다
다카유키 네기시
Original Assignee
가부시끼가이샤 도꾸야마
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시끼가이샤 도꾸야마 filed Critical 가부시끼가이샤 도꾸야마
Publication of KR20230048318A publication Critical patent/KR20230048318A/ko
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • H01L21/3205—
    • H01L21/32134—
    • H01L21/768—
    • H01L23/532—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020237003791A 2020-08-07 2021-08-06 반도체 웨이퍼용 처리액 Pending KR20230048318A (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020134514 2020-08-07
JPJP-P-2020-134514 2020-08-07
JPJP-P-2021-054202 2021-03-26
JP2021054202 2021-03-26
PCT/JP2021/029371 WO2022030627A1 (ja) 2020-08-07 2021-08-06 半導体ウエハ用処理液

Publications (1)

Publication Number Publication Date
KR20230048318A true KR20230048318A (ko) 2023-04-11

Family

ID=80118121

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237003791A Pending KR20230048318A (ko) 2020-08-07 2021-08-06 반도체 웨이퍼용 처리액

Country Status (5)

Country Link
US (1) US12195658B2 (https=)
JP (2) JP7375032B2 (https=)
KR (1) KR20230048318A (https=)
CN (1) CN116057208A (https=)
WO (1) WO2022030627A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
KR20230128967A (ko) * 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
CN116606002A (zh) * 2023-04-24 2023-08-18 西安热工研究院有限公司 一种抑制直接空冷机组空冷岛运行腐蚀的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001234373A (ja) 2000-02-23 2001-08-31 Nec Corp ルテニウム系金属の除去液及びその使用方法
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
JP2005166924A (ja) 2003-12-02 2005-06-23 Kanto Chem Co Inc タングステン金属除去液及びそれを用いたタングステン金属の除去方法
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2013254946A (ja) 2012-05-10 2013-12-19 Semiconductor Energy Lab Co Ltd 配線の形成方法、半導体装置、および半導体装置の作製方法
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL284777A (https=) * 1961-10-28
KR102102792B1 (ko) * 2011-12-28 2020-05-29 엔테그리스, 아이엔씨. 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
WO2014055281A1 (en) * 2012-10-01 2014-04-10 Dow Global Technologies Llc Compositions and processes for mesoporous silicas having large pores with narrow diameter distributions
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
SG11201510744VA (en) * 2013-07-05 2016-01-28 Wako Pure Chem Ind Ltd Etching agent, etching method and etching agent preparation liquid
JP6501492B2 (ja) * 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
JP6747432B2 (ja) * 2015-04-13 2020-08-26 三菱瓦斯化学株式会社 ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法
MY199974A (en) 2017-03-31 2023-12-01 Kanto Kagaku Etchant composition for etching titanium layer or titanium-containing layer, and etching method
JP2019054121A (ja) * 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液
US11346008B2 (en) * 2018-12-14 2022-05-31 Entegris, Inc. Ruthenium etching composition and method

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001234373A (ja) 2000-02-23 2001-08-31 Nec Corp ルテニウム系金属の除去液及びその使用方法
JP2002161381A (ja) 2000-11-22 2002-06-04 Ebara Corp ルテニウム膜のエッチング方法
JP2005166924A (ja) 2003-12-02 2005-06-23 Kanto Chem Co Inc タングステン金属除去液及びそれを用いたタングステン金属の除去方法
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
JP2013254946A (ja) 2012-05-10 2013-12-19 Semiconductor Energy Lab Co Ltd 配線の形成方法、半導体装置、および半導体装置の作製方法
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
WO2019142788A1 (ja) 2018-01-16 2019-07-25 株式会社トクヤマ 次亜塩素酸イオンを含む半導体ウェハの処理液

Also Published As

Publication number Publication date
JP7735233B2 (ja) 2025-09-08
JPWO2022030627A1 (https=) 2022-02-10
CN116057208A (zh) 2023-05-02
JP7375032B2 (ja) 2023-11-07
US20220298416A1 (en) 2022-09-22
US12195658B2 (en) 2025-01-14
JP2022153481A (ja) 2022-10-12
TW202208323A (zh) 2022-03-01
WO2022030627A1 (ja) 2022-02-10

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