CN116057208A - 半导体晶片用处理液 - Google Patents

半导体晶片用处理液 Download PDF

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Publication number
CN116057208A
CN116057208A CN202180058168.6A CN202180058168A CN116057208A CN 116057208 A CN116057208 A CN 116057208A CN 202180058168 A CN202180058168 A CN 202180058168A CN 116057208 A CN116057208 A CN 116057208A
Authority
CN
China
Prior art keywords
ion
bromide
ions
semiconductor wafer
treatment liquid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202180058168.6A
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English (en)
Chinese (zh)
Inventor
吉川由树
佐藤伴光
下田享史
根岸贵幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuyama Corp
Original Assignee
Tokuyama Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuyama Corp filed Critical Tokuyama Corp
Publication of CN116057208A publication Critical patent/CN116057208A/zh
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
CN202180058168.6A 2020-08-07 2021-08-06 半导体晶片用处理液 Pending CN116057208A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020134514 2020-08-07
JP2020-134514 2020-08-07
JP2021-054202 2021-03-26
JP2021054202 2021-03-26
PCT/JP2021/029371 WO2022030627A1 (ja) 2020-08-07 2021-08-06 半導体ウエハ用処理液

Publications (1)

Publication Number Publication Date
CN116057208A true CN116057208A (zh) 2023-05-02

Family

ID=80118121

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180058168.6A Pending CN116057208A (zh) 2020-08-07 2021-08-06 半导体晶片用处理液

Country Status (5)

Country Link
US (1) US12195658B2 (https=)
JP (2) JP7375032B2 (https=)
KR (1) KR20230048318A (https=)
CN (1) CN116057208A (https=)
WO (1) WO2022030627A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
KR20230128967A (ko) * 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
CN116606002A (zh) * 2023-04-24 2023-08-18 西安热工研究院有限公司 一种抑制直接空冷机组空冷岛运行腐蚀的方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953288A (en) * 1961-10-28 1964-03-25 Canadian Ind Inhibition of corrosion by chlorinated solvents
US20020060202A1 (en) * 2000-11-22 2002-05-23 Akira Fukunaga Method and apparatus for etching ruthenium films
CN102652188A (zh) * 2009-12-17 2012-08-29 昭和电工株式会社 钌类金属的蚀刻用组合物及其配制方法
WO2013101907A1 (en) * 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
CN105378901A (zh) * 2013-07-05 2016-03-02 和光纯药工业株式会社 蚀刻剂、蚀刻方法和蚀刻剂制备液
CN105683336A (zh) * 2013-06-06 2016-06-15 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
JP2019054121A (ja) * 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP4355201B2 (ja) 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
WO2014055281A1 (en) * 2012-10-01 2014-04-10 Dow Global Technologies Llc Compositions and processes for mesoporous silicas having large pores with narrow diameter distributions
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP6501492B2 (ja) * 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
JP6747432B2 (ja) * 2015-04-13 2020-08-26 三菱瓦斯化学株式会社 ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法
MY199974A (en) 2017-03-31 2023-12-01 Kanto Kagaku Etchant composition for etching titanium layer or titanium-containing layer, and etching method
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
US11346008B2 (en) * 2018-12-14 2022-05-31 Entegris, Inc. Ruthenium etching composition and method

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB953288A (en) * 1961-10-28 1964-03-25 Canadian Ind Inhibition of corrosion by chlorinated solvents
US20020060202A1 (en) * 2000-11-22 2002-05-23 Akira Fukunaga Method and apparatus for etching ruthenium films
CN102652188A (zh) * 2009-12-17 2012-08-29 昭和电工株式会社 钌类金属的蚀刻用组合物及其配制方法
WO2013101907A1 (en) * 2011-12-28 2013-07-04 Advanced Technology Materials, Inc. Compositions and methods for selectively etching titanium nitride
CN104145324A (zh) * 2011-12-28 2014-11-12 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
TW201447042A (zh) * 2013-01-24 2014-12-16 昭和電工股份有限公司 蝕刻液
CN105683336A (zh) * 2013-06-06 2016-06-15 高级技术材料公司 用于选择性蚀刻氮化钛的组合物和方法
CN105378901A (zh) * 2013-07-05 2016-03-02 和光纯药工业株式会社 蚀刻剂、蚀刻方法和蚀刻剂制备液
JP2019054121A (ja) * 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液

Also Published As

Publication number Publication date
JP7735233B2 (ja) 2025-09-08
JPWO2022030627A1 (https=) 2022-02-10
JP7375032B2 (ja) 2023-11-07
US20220298416A1 (en) 2022-09-22
KR20230048318A (ko) 2023-04-11
US12195658B2 (en) 2025-01-14
JP2022153481A (ja) 2022-10-12
TW202208323A (zh) 2022-03-01
WO2022030627A1 (ja) 2022-02-10

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Application publication date: 20230502