JP7375032B2 - 半導体ウエハ用処理液 - Google Patents

半導体ウエハ用処理液 Download PDF

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Publication number
JP7375032B2
JP7375032B2 JP2021551588A JP2021551588A JP7375032B2 JP 7375032 B2 JP7375032 B2 JP 7375032B2 JP 2021551588 A JP2021551588 A JP 2021551588A JP 2021551588 A JP2021551588 A JP 2021551588A JP 7375032 B2 JP7375032 B2 JP 7375032B2
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Japan
Prior art keywords
ion
bromide
ions
solution
treatment liquid
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JP2021551588A
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English (en)
Japanese (ja)
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JPWO2022030627A1 (https=
JPWO2022030627A5 (https=
Inventor
由樹 吉川
伴光 佐藤
享史 下田
貴幸 根岸
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Tokuyama Corp
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Tokuyama Corp
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Publication of JPWO2022030627A1 publication Critical patent/JPWO2022030627A1/ja
Priority to JP2022113534A priority Critical patent/JP7735233B2/ja
Publication of JPWO2022030627A5 publication Critical patent/JPWO2022030627A5/ja
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/40—Alkaline compositions for etching other metallic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
    • C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
    • C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
    • C23F11/14—Nitrogen-containing compounds
    • C23F11/141—Amines; Quaternary ammonium compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/66—Wet etching of conductive or resistive materials
    • H10P50/663—Wet etching of conductive or resistive materials by chemical means only
    • H10P50/667—Wet etching of conductive or resistive materials by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
    • H10W20/48—Insulating materials thereof

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • ing And Chemical Polishing (AREA)
  • Weting (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP2021551588A 2020-08-07 2021-08-06 半導体ウエハ用処理液 Active JP7375032B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2022113534A JP7735233B2 (ja) 2020-08-07 2022-07-14 半導体ウエハ用処理液

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2020134514 2020-08-07
JP2020134514 2020-08-07
JP2021054202 2021-03-26
JP2021054202 2021-03-26
PCT/JP2021/029371 WO2022030627A1 (ja) 2020-08-07 2021-08-06 半導体ウエハ用処理液

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2022113534A Division JP7735233B2 (ja) 2020-08-07 2022-07-14 半導体ウエハ用処理液

Publications (3)

Publication Number Publication Date
JPWO2022030627A1 JPWO2022030627A1 (https=) 2022-02-10
JPWO2022030627A5 JPWO2022030627A5 (https=) 2022-07-19
JP7375032B2 true JP7375032B2 (ja) 2023-11-07

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JP2021551588A Active JP7375032B2 (ja) 2020-08-07 2021-08-06 半導体ウエハ用処理液
JP2022113534A Active JP7735233B2 (ja) 2020-08-07 2022-07-14 半導体ウエハ用処理液

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JP2022113534A Active JP7735233B2 (ja) 2020-08-07 2022-07-14 半導体ウエハ用処理液

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US (1) US12195658B2 (https=)
JP (2) JP7375032B2 (https=)
KR (1) KR20230048318A (https=)
CN (1) CN116057208A (https=)
WO (1) WO2022030627A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6874231B1 (ja) * 2019-09-27 2021-05-19 株式会社トクヤマ ＲｕＯ４ガスの発生抑制剤及びＲｕＯ４ガスの発生抑制方法
WO2022024636A1 (ja) * 2020-07-31 2022-02-03 富士フイルム株式会社 薬液、薬液収容体、基板の処理方法
US12444617B2 (en) * 2020-08-07 2025-10-14 Tokuyama Corporation Semiconductor wafer processing liquid containing hypobromite ions and PH buffering agent
KR20230128967A (ko) * 2022-02-28 2023-09-05 동우 화인켐 주식회사 루테늄 식각액 조성물, 이를 이용한 패턴의 형성 방법 및 어레이 기판의 제조방법, 및 이에 따라 제조된 어레이 기판
US20250084309A1 (en) * 2022-10-03 2025-03-13 Tokuyama Corporation Semiconductor processing solution
CN116606002A (zh) * 2023-04-24 2023-08-18 西安热工研究院有限公司 一种抑制直接空冷机组空冷岛运行腐蚀的方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
WO2018181896A1 (ja) 2017-03-31 2018-10-04 関東化學株式会社 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法
JP2019054121A (ja) 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液

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NL284777A (https=) * 1961-10-28
JP4510979B2 (ja) 2000-02-23 2010-07-28 ルネサスエレクトロニクス株式会社 ルテニウム又は酸化ルテニウム除去液の使用方法、及びルテニウム又は酸化ルテニウムの除去方法
JP3585437B2 (ja) 2000-11-22 2004-11-04 株式会社荏原製作所 ルテニウム膜のエッチング方法
JP4355201B2 (ja) 2003-12-02 2009-10-28 関東化学株式会社 タングステン金属除去液及びそれを用いたタングステン金属の除去方法
KR102102792B1 (ko) * 2011-12-28 2020-05-29 엔테그리스, 아이엔씨. 티타늄 나이트라이드의 선택적인 에칭을 위한 조성물 및 방법
KR102069158B1 (ko) 2012-05-10 2020-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 배선의 형성 방법, 반도체 장치, 및 반도체 장치의 제작 방법
WO2014055281A1 (en) * 2012-10-01 2014-04-10 Dow Global Technologies Llc Compositions and processes for mesoporous silicas having large pores with narrow diameter distributions
WO2014115758A1 (ja) * 2013-01-24 2014-07-31 昭和電工株式会社 エッチング液
KR102338550B1 (ko) * 2013-06-06 2021-12-14 엔테그리스, 아이엔씨. 질화 티타늄의 선택적인 에칭을 위한 조성물 및 방법
SG11201510744VA (en) * 2013-07-05 2016-01-28 Wako Pure Chem Ind Ltd Etching agent, etching method and etching agent preparation liquid
WO2016068183A1 (ja) 2014-10-31 2016-05-06 富士フイルム株式会社 ルテニウム除去組成物、及び、磁気抵抗メモリの製造方法
JP6501492B2 (ja) * 2014-10-31 2019-04-17 関東化學株式会社 フォトレジスト残渣および／またはポリマー残渣を除去するための組成物
JP6747432B2 (ja) * 2015-04-13 2020-08-26 三菱瓦斯化学株式会社 ウェハを再生するための炭素含有シリコン酸化物を含む材料の洗浄液および洗浄方法
CN111684570B (zh) 2018-01-16 2024-02-27 株式会社德山 含有次氯酸根离子的半导体晶圆的处理液
US11346008B2 (en) * 2018-12-14 2022-05-31 Entegris, Inc. Ruthenium etching composition and method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011074601A1 (ja) 2009-12-17 2011-06-23 昭和電工株式会社 ルテニウム系金属のエッチング用組成物およびその調製方法
WO2018181896A1 (ja) 2017-03-31 2018-10-04 関東化學株式会社 チタン層またはチタン含有層のエッチング液組成物およびエッチング方法
JP2019054121A (ja) 2017-09-15 2019-04-04 攝津製油株式会社 エッチング液

Also Published As

Publication number Publication date
JP7735233B2 (ja) 2025-09-08
JPWO2022030627A1 (https=) 2022-02-10
CN116057208A (zh) 2023-05-02
US20220298416A1 (en) 2022-09-22
KR20230048318A (ko) 2023-04-11
US12195658B2 (en) 2025-01-14
JP2022153481A (ja) 2022-10-12
TW202208323A (zh) 2022-03-01
WO2022030627A1 (ja) 2022-02-10

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