JPWO2011001962A1 - 光電変換素子の製造方法、光電変換素子の製造装置および光電変換素子 - Google Patents
光電変換素子の製造方法、光電変換素子の製造装置および光電変換素子 Download PDFInfo
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- 229910021417 amorphous silicon Inorganic materials 0.000 description 8
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 6
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
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- WWXUFHOOUHIVGV-UHFFFAOYSA-N [S].[In]=S Chemical compound [S].[In]=S WWXUFHOOUHIVGV-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
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- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- LCUOIYYHNRBAFS-UHFFFAOYSA-N copper;sulfanylideneindium Chemical compound [Cu].[In]=S LCUOIYYHNRBAFS-UHFFFAOYSA-N 0.000 description 1
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- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- SIXIBASSFIFHDK-UHFFFAOYSA-N indium(3+);trisulfide Chemical compound [S-2].[S-2].[S-2].[In+3].[In+3] SIXIBASSFIFHDK-UHFFFAOYSA-N 0.000 description 1
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- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
Abstract
Description
前記物性異常箇所を機械加工で分離する分離工程とを具備する。
1a:光電変換体
1b;構造体
1b’:凸部1b
2:基板
3:裏面電極
4:半導体層
5:バッファ層
6:窓層
9:載置テーブル
10:電圧印加ユニット
11:観察用カメラ(検出ユニット)
12:コンピューター(特定ユニット)
13:ディスプレー
14:シーケンサー
15:サーボモーター
16:スクライバー上下手段
17:スクライバー
19:物性異常箇所(異常箇所)
20、21:溝(第2部位)
22:第1部位
Claims (13)
- 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体について物性異常箇所を特定する特定工程と、
前記物性異常箇所を機械加工で分離する分離工程と
を具備することを特徴とする光電変換素子の製造方法。 - 前記分離工程は、前記構造体に、前記物性異常箇所を除去された部位である第1部位を形成する工程であることを特徴とする請求項1記載の光電変換素子の製造方法。
- 前記分離工程は、前記物性異常箇所を取り囲むように、線状に前記構造体の一部を除去することによって、前記物性異常箇所が周辺部分から電気的に分断された部位である第2部位を形成する工程であることを特徴とする請求項1記載の光電変換素子の製造方法。
- 前記第1部位として、前記第1電極、前記光電変換体および前記第2電極の積層方向に沿って設けられた孔部を、前記第2電極側から前記第1電極側に向かって断面積が小さくなっているように形成することを特徴とする請求項2に記載の光電変換素子の製造方法。
- 前記第1部位として、前記第1電極、前記光電変換体および前記第2電極の積層方向に沿って設けられた孔部を、前記第1電極および前記光電変換体を貫通する第1孔部と、前記第2電極を貫通する第2孔部とによって、前記第1電極の表面側から平面視したとき、前記第1孔部が前記第2孔部の内側に位置しているように形成することを特徴とする請求項2に記載の光電変換素子の製造方法。
- モリブデンを含む前記第1電極をガラス基板の一主面上に形成し、
カルコパイライト系化合物を含む前記半導体層を形成し、
前記分離工程を、前記第1電極を前記ガラス基板の前記一主面上に残した状態で行なうことを特徴とする請求項1乃至請求項5のいずれかに記載の光電変換素子の製造方法。 - 前記分離工程後に、前記第1部位または前記第2部位を樹脂で覆う工程をさらに具備することを特徴とする請求項2または請求項3に記載の光電変換素子の製造方法。
- 前記分離工程は、前記第1部位または前記第2部位に対向する前記構造体の表面に凸部を設けるように行なうことを特徴とする請求項7に記載の光電変換素子の製造方法。
- 前記特定工程は、前記構造体に順バイアス電圧を印加したときの前記構造体のエレクトロルミネッセンスによる発光強度によって前記物性異常箇所を特定する工程であることを特徴とする請求項1乃至請求項8のいずれかに記載の光電変換素子の製造方法。
- 前記特定工程は、前記構造体に順バイアス電圧または逆バイアス電圧を印加したときの前記構造体から発せられる赤外線強度によって前記物性異常箇所を特定する工程であることを特徴とする請求項1乃至請求項8のいずれかに記載の光電変換素子の製造方法。
- 前記逆バイアス電圧を、周波数変調して印加することを特徴とする請求項10記載の光電変換素子の製造方法。
- 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体について物性異常箇所を分離する機構を有する光電変換素子の製造装置であって、
前記構造体にバイアス電圧を印加する電圧印加ユニットと、
前記構造体から発せられる電磁波の強度を検出する検出ユニットと、
前記電磁波の強度によって前記物性異常箇所を特定する特定ユニットと、
前記構造体に対して機械加工を施し、前記物性異常箇所を分離する機械加工ユニットと
を具備することを特徴とする光電変換素子の製造装置。 - 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体を備えており、前記構造体は、機械加工によって物性異常箇所が分離されてなる光電変換素子。
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JP2011520923A JP5295369B2 (ja) | 2009-06-29 | 2010-06-29 | 光電変換素子の製造方法 |
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PCT/JP2010/061030 WO2011001962A1 (ja) | 2009-06-29 | 2010-06-29 | 光電変換素子の製造方法、光電変換素子の製造装置および光電変換素子 |
JP2011520923A JP5295369B2 (ja) | 2009-06-29 | 2010-06-29 | 光電変換素子の製造方法 |
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US (1) | US20120006389A1 (ja) |
EP (1) | EP2450960A1 (ja) |
JP (1) | JP5295369B2 (ja) |
CN (1) | CN102334193A (ja) |
WO (1) | WO2011001962A1 (ja) |
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JP2012109421A (ja) * | 2010-11-18 | 2012-06-07 | Mitsuboshi Diamond Industrial Co Ltd | 薄膜太陽電池用の欠陥修復用ツール、欠陥修復用装置及び欠陥修復方法 |
JP2013030507A (ja) * | 2011-07-26 | 2013-02-07 | Kyocera Corp | 光電変換装置 |
JP5804999B2 (ja) * | 2012-03-30 | 2015-11-04 | 三星ダイヤモンド工業株式会社 | 溝加工ツールおよびこれを用いた薄膜太陽電池の溝加工方法ならびに溝加工装置 |
JP6005571B2 (ja) * | 2013-03-28 | 2016-10-12 | 三星ダイヤモンド工業株式会社 | 金属膜積層セラミックス基板溝加工用ツール |
EP2985542A4 (en) * | 2013-04-30 | 2017-04-05 | Daikin Industries, Ltd. | Decorative panel and air-conditioner in-room unit provided with same |
JP6327896B2 (ja) * | 2014-03-18 | 2018-05-23 | シャープ株式会社 | 化合物半導体太陽電池セルおよび化合物半導体太陽電池セルの製造方法 |
JP6600670B2 (ja) * | 2017-09-15 | 2019-10-30 | 株式会社東芝 | 光電変換素子、その製造方法、およびその製造装置 |
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2010
- 2010-06-29 CN CN2010800092446A patent/CN102334193A/zh active Pending
- 2010-06-29 WO PCT/JP2010/061030 patent/WO2011001962A1/ja active Application Filing
- 2010-06-29 EP EP10794131A patent/EP2450960A1/en not_active Withdrawn
- 2010-06-29 US US13/256,902 patent/US20120006389A1/en not_active Abandoned
- 2010-06-29 JP JP2011520923A patent/JP5295369B2/ja not_active Expired - Fee Related
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EP2450960A1 (en) | 2012-05-09 |
JP5295369B2 (ja) | 2013-09-18 |
US20120006389A1 (en) | 2012-01-12 |
CN102334193A (zh) | 2012-01-25 |
WO2011001962A1 (ja) | 2011-01-06 |
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