JP7077017B2 - 太陽電池モジュール - Google Patents
太陽電池モジュール Download PDFInfo
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- JP7077017B2 JP7077017B2 JP2017558059A JP2017558059A JP7077017B2 JP 7077017 B2 JP7077017 B2 JP 7077017B2 JP 2017558059 A JP2017558059 A JP 2017558059A JP 2017558059 A JP2017558059 A JP 2017558059A JP 7077017 B2 JP7077017 B2 JP 7077017B2
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- Prior art keywords
- power generation
- sealing material
- solar cell
- cell module
- generation cell
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- 238000010248 power generation Methods 0.000 claims description 73
- 239000003566 sealing material Substances 0.000 claims description 66
- 239000000758 substrate Substances 0.000 claims description 38
- 230000031700 light absorption Effects 0.000 claims description 27
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920005549 butyl rubber Polymers 0.000 claims description 3
- 239000005038 ethylene vinyl acetate Substances 0.000 claims description 3
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 claims description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 claims description 2
- 238000009751 slip forming Methods 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 claims 2
- 230000035939 shock Effects 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000011787 zinc oxide Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000008393 encapsulating agent Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 239000005083 Zinc sulfide Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000002542 deteriorative effect Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052717 sulfur Inorganic materials 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006059 cover glass Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 description 1
- 239000005341 toughened glass Substances 0.000 description 1
- 150000003752 zinc compounds Chemical class 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Description
図1は、本発明の実施形態に係る太陽電池モジュール10の概略平面図である。図2は、本発明の実施形態に係る太陽電池モジュール10の概略断面図である。なお、図1において、図2に示す封止材14、第二の基板15、シール材16、及び緩衝部材17の図示は省略されている。
図3~図5は、太陽電池モジュールの製造工程を例示する図である。まず、図3に示す工程では、周知の方法により、第一の基板11上に発電セル12、分割溝12x及び12yを形成する。なお、Bは、発電セル12の外縁領域を示している(以降、外縁領域Bとする)。
11 第一の基板
12 発電セル
12x、12y、12z 分割溝
13 配線
14 封止材
15 第二の基板
16 シール材
17 緩衝部材
18 接続用電極
20 孔
121 裏面電極
122 光吸収層
123 透明電極
Claims (4)
- 第一の基板と、
前記第一の基板上に形成された発電部であって、光吸収層、及び前記光吸収層の上部に設けられた電極を含む複数の発電セルと、前記発電セルに接続された接続用電極と、を有する発電部と、
前記接続用電極に接続された配線と、
前記接続用電極上に設けられ、前記発電セルと前記配線との間に位置し、前記発電セルの端部に連続的に形成された緩衝部材と、
前記発電セルを封止する封止材と、
前記封止材上に積層された第二の基板と、
前記封止材の外側面を覆うように形成されたシール材と、を備え、
前記緩衝部材は、前記発電セルと同一の層構成であり、
前記緩衝部材の最上層と、複数の前記発電セルのうち前記緩衝部材に隣接する前記発電セルの最上層は、1つの連続する層から形成され、
前記封止材と前記シール材の界面は前記緩衝部材の最上層上に位置し、
前記界面と連続する前記封止材の端部、及び前記界面と連続する前記シール材の端部は、前記緩衝部材の最上層上に位置する、太陽電池モジュール。 - 前記緩衝部材は非発電セルである、請求項1に記載の太陽電池モジュール。
- 前記封止材はエチレンビニルアセテート樹脂からなり、前記シール材がブチルゴムからなる、請求項1又は2に記載の太陽電池モジュール。
- 前記配線は前記接続用電極の上面に直接形成されている、請求項1乃至3の何れか一項に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015252206 | 2015-12-24 | ||
JP2015252206 | 2015-12-24 | ||
PCT/JP2016/087232 WO2017110620A1 (ja) | 2015-12-24 | 2016-12-14 | 太陽電池モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2017110620A1 JPWO2017110620A1 (ja) | 2018-10-18 |
JP7077017B2 true JP7077017B2 (ja) | 2022-05-30 |
Family
ID=59090182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017558059A Active JP7077017B2 (ja) | 2015-12-24 | 2016-12-14 | 太陽電池モジュール |
Country Status (2)
Country | Link |
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JP (1) | JP7077017B2 (ja) |
WO (1) | WO2017110620A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019214060A1 (zh) * | 2018-05-08 | 2019-11-14 | 北京汉能光伏投资有限公司 | 发电机构及其制备方法、发电装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148496A (ja) | 1999-11-19 | 2001-05-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュールおよびその製造方法 |
WO2007071703A1 (en) | 2005-12-22 | 2007-06-28 | Shell Erneuerbare Energien Gmbh | Photovoltaic device and method for encapsulating |
US20120118357A1 (en) | 2010-11-15 | 2012-05-17 | Lg Electronics Inc. | Solar cell module |
JP2012175079A (ja) | 2011-02-24 | 2012-09-10 | Honda Motor Co Ltd | 太陽電池モジュール |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6438250B2 (ja) * | 2014-09-19 | 2018-12-12 | ソーラーフロンティア株式会社 | 太陽電池モジュール及びその製造方法 |
-
2016
- 2016-12-14 WO PCT/JP2016/087232 patent/WO2017110620A1/ja active Application Filing
- 2016-12-14 JP JP2017558059A patent/JP7077017B2/ja active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001148496A (ja) | 1999-11-19 | 2001-05-29 | Kanegafuchi Chem Ind Co Ltd | 太陽電池モジュールおよびその製造方法 |
WO2007071703A1 (en) | 2005-12-22 | 2007-06-28 | Shell Erneuerbare Energien Gmbh | Photovoltaic device and method for encapsulating |
US20120118357A1 (en) | 2010-11-15 | 2012-05-17 | Lg Electronics Inc. | Solar cell module |
JP2012175079A (ja) | 2011-02-24 | 2012-09-10 | Honda Motor Co Ltd | 太陽電池モジュール |
Also Published As
Publication number | Publication date |
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JPWO2017110620A1 (ja) | 2018-10-18 |
WO2017110620A1 (ja) | 2017-06-29 |
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