JP7036738B2 - 光電変換モジュール - Google Patents
光電変換モジュール Download PDFInfo
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- JP7036738B2 JP7036738B2 JP2018556523A JP2018556523A JP7036738B2 JP 7036738 B2 JP7036738 B2 JP 7036738B2 JP 2018556523 A JP2018556523 A JP 2018556523A JP 2018556523 A JP2018556523 A JP 2018556523A JP 7036738 B2 JP7036738 B2 JP 7036738B2
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- 238000006243 chemical reaction Methods 0.000 title claims description 115
- 239000003566 sealing material Substances 0.000 claims description 68
- 239000000758 substrate Substances 0.000 claims description 61
- 239000008393 encapsulating agent Substances 0.000 claims description 20
- 238000010248 power generation Methods 0.000 claims description 15
- 239000000853 adhesive Substances 0.000 claims description 13
- 230000001070 adhesive effect Effects 0.000 claims description 13
- 230000031700 light absorption Effects 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 230000002093 peripheral effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 229920005989 resin Polymers 0.000 description 8
- 239000011347 resin Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 229920000139 polyethylene terephthalate Polymers 0.000 description 5
- 239000005020 polyethylene terephthalate Substances 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 4
- 229920005549 butyl rubber Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052717 sulfur Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 240000002329 Inga feuillei Species 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229910052711 selenium Inorganic materials 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000011593 sulfur Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000005341 toughened glass Substances 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 238000012217 deletion Methods 0.000 description 1
- 230000037430 deletion Effects 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000012943 hotmelt Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 239000013464 silicone adhesive Substances 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0481—Encapsulation of modules characterised by the composition of the encapsulation material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/049—Protective back sheets
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02S—GENERATION OF ELECTRIC POWER BY CONVERSION OF INFRARED RADIATION, VISIBLE LIGHT OR ULTRAVIOLET LIGHT, e.g. USING PHOTOVOLTAIC [PV] MODULES
- H02S30/00—Structural details of PV modules other than those related to light conversion
- H02S30/10—Frame structures
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Description
図1は、第1の実施の形態に係る光電変換モジュールを例示する平面図である。図2は、第1の実施の形態に係る光電変換モジュールを例示する部分拡大断面図であり、図1のA-A線に沿う断面を示している。図3は、第1の実施の形態に係る光電変換モジュールを例示する部分拡大断面図であり、図1のB-B線に沿う断面を示している。図4は、図3のD部の部分拡大断面図である。図5は、第1の実施の形態に係る光電変換モジュールを例示する部分拡大断面図であり、図1のC-C線に沿う断面を示している。図6は、図5のE部の部分拡大断面図である。
第1の実施の形態の変形例では、第1の実施の形態とは形状の異なるシール材を用いる例を示す。なお、第1の実施の形態の変形例において、既に説明した実施の形態と同一構成部についての説明は省略する場合がある。
20 光電変換パネル
21 第1の基板
22、22X 光電変換層
23 配線
24 表面封止材
25 第2の基板
26 シール材
27 裏面封止材
40 フレーム
50 短辺フレーム
60 長辺フレーム
Claims (7)
- 光電変換パネルと、前記光電変換パネルの外縁に取り付けられたフレームと、を備えた光電変換モジュールであって、
前記光電変換パネルは、
第1の基板と、
前記第1の基板上に設けられた光電変換層と、
前記光電変換層を覆う第2の基板と、
前記第1の基板及び前記第2の基板の周縁部において、前記第1の基板と前記第2の基板との間をシールし、かつ、前記光電変換層の一部を覆うシール材と、を有し、
前記シール材は、前記第1の基板の前記光電変換層が設けられた面側から、前記第1の基板の前記光電変換層が設けられた面の反対側の面に回り込むように形成され、
前記シール材と前記フレームとの間に、前記シール材とは異なる材料からなる絶縁性部材が設けられていることを特徴とする、光電変換モジュール。 - 前記光電変換パネルは、前記第1の基板の前記光電変換層が設けられた面とは反対側の面を覆う封止部材を更に有し、
前記絶縁性部材と前記封止部材は同一部材で形成されている、請求項1に記載の光電変換モジュール。 - 前記絶縁性部材の前記シール材側とは反対側の面を被覆するバックシートと、
前記バックシートと前記フレームとを固定する接着剤と、を有し、
前記接着剤は、前記フレームの下鍔の先端まで設けられている、請求項1又は2に記載の光電変換モジュール。 - 前記第1の基板は、前記光電変換層で発生した電力を外部に取り出すための配線が設けられた配線領域と、前記配線が設けられていない非配線領域と、を備え、
前記非配線領域では、前記第1の基板の前記光電変換層が設けられた面の端部の表面が前記光電変換層から露出し、
前記シール材は、前記光電変換層から露出した前記端部の表面を覆うように設けられている、請求項1乃至3の何れか一項に記載の光電変換モジュール。 - 前記光電変換層は、前記第1の基板側から裏面電極、光吸収層、及び透明電極が順に積層された構造であり、
前記非配線領域の前記端部側では、前記裏面電極の表面が前記光吸収層及び前記透明電極から露出し、
前記シール材は、前記光吸収層及び前記透明電極から露出した前記裏面電極の表面を覆うように設けられている、請求項4に記載の光電変換モジュール。 - 前記シール材は、前記光電変換層の周縁部を覆うように設けられている、請求項4に記載の光電変換モジュール。
- 前記第1の基板の前記光電変換層が設けられた面には、前記光電変換層の受光面側を封止する表面封止材が設けられ、
前記光電変換層の外縁部には、非発電領域が設けられ、
前記表面封止材と前記シール材の界面は前記非発電領域上に位置する、請求項1乃至6の何れか一項に記載の光電変換モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016244739 | 2016-12-16 | ||
JP2016244739 | 2016-12-16 | ||
PCT/JP2017/041689 WO2018110213A1 (ja) | 2016-12-16 | 2017-11-20 | 光電変換モジュール |
Publications (2)
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JPWO2018110213A1 JPWO2018110213A1 (ja) | 2019-10-24 |
JP7036738B2 true JP7036738B2 (ja) | 2022-03-15 |
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JP2018556523A Active JP7036738B2 (ja) | 2016-12-16 | 2017-11-20 | 光電変換モジュール |
Country Status (3)
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US (1) | US10930805B2 (ja) |
JP (1) | JP7036738B2 (ja) |
WO (1) | WO2018110213A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2023092257A1 (en) * | 2021-11-23 | 2023-06-01 | China Triumph International Engineering Co., Ltd. | Method for producing a photovoltaic module with edge protection and a photovoltaic module with edge protection |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008150558A1 (en) | 2007-06-08 | 2008-12-11 | Robert Stancel | Edge mountable electrical connection assembly |
JP2011253836A (ja) | 2010-05-31 | 2011-12-15 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2015096492A1 (zh) | 2013-12-27 | 2015-07-02 | 深圳市比亚迪汽车研发有限公司 | 光伏电池组件 |
WO2016043137A1 (ja) | 2014-09-19 | 2016-03-24 | ソーラーフロンティア株式会社 | 太陽電池モジュール |
JP2016063125A (ja) | 2014-09-19 | 2016-04-25 | ソーラーフロンティア株式会社 | 太陽電池モジュール及びその製造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3337286B2 (ja) * | 1993-11-10 | 2002-10-21 | シャープ株式会社 | 太陽電池モジュール |
JP6022949B2 (ja) | 2013-01-10 | 2016-11-09 | 京セラ株式会社 | 光電変換モジュール |
JP6505507B2 (ja) * | 2015-06-01 | 2019-04-24 | ソーラーフロンティア株式会社 | 太陽電池モジュール |
-
2017
- 2017-11-20 WO PCT/JP2017/041689 patent/WO2018110213A1/ja active Application Filing
- 2017-11-20 US US16/468,048 patent/US10930805B2/en active Active
- 2017-11-20 JP JP2018556523A patent/JP7036738B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008150558A1 (en) | 2007-06-08 | 2008-12-11 | Robert Stancel | Edge mountable electrical connection assembly |
JP2011253836A (ja) | 2010-05-31 | 2011-12-15 | Sanyo Electric Co Ltd | 太陽電池モジュール |
WO2015096492A1 (zh) | 2013-12-27 | 2015-07-02 | 深圳市比亚迪汽车研发有限公司 | 光伏电池组件 |
WO2016043137A1 (ja) | 2014-09-19 | 2016-03-24 | ソーラーフロンティア株式会社 | 太陽電池モジュール |
JP2016063125A (ja) | 2014-09-19 | 2016-04-25 | ソーラーフロンティア株式会社 | 太陽電池モジュール及びその製造方法 |
Also Published As
Publication number | Publication date |
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US20200020818A1 (en) | 2020-01-16 |
JPWO2018110213A1 (ja) | 2019-10-24 |
WO2018110213A1 (ja) | 2018-06-21 |
US10930805B2 (en) | 2021-02-23 |
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