JP5901656B2 - 太陽電池およびその製造方法{solarcellandmanufacturingmethodofthesame} - Google Patents
太陽電池およびその製造方法{solarcellandmanufacturingmethodofthesame} Download PDFInfo
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- JP5901656B2 JP5901656B2 JP2013550372A JP2013550372A JP5901656B2 JP 5901656 B2 JP5901656 B2 JP 5901656B2 JP 2013550372 A JP2013550372 A JP 2013550372A JP 2013550372 A JP2013550372 A JP 2013550372A JP 5901656 B2 JP5901656 B2 JP 5901656B2
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- 238000004519 manufacturing process Methods 0.000 title description 14
- 230000004888 barrier function Effects 0.000 claims description 58
- 230000031700 light absorption Effects 0.000 claims description 51
- 239000000758 substrate Substances 0.000 claims description 49
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 15
- 229910052708 sodium Inorganic materials 0.000 claims description 15
- 239000011734 sodium Substances 0.000 claims description 15
- MHWZQNGIEIYAQJ-UHFFFAOYSA-N molybdenum diselenide Chemical compound [Se]=[Mo]=[Se] MHWZQNGIEIYAQJ-UHFFFAOYSA-N 0.000 claims description 5
- 229910016001 MoSe Inorganic materials 0.000 claims description 3
- 238000009792 diffusion process Methods 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 2
- 229910004283 SiO 4 Inorganic materials 0.000 claims description 2
- 238000000034 method Methods 0.000 description 9
- 239000011669 selenium Substances 0.000 description 9
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 238000000224 chemical solution deposition Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- HUAUNKAZQWMVFY-UHFFFAOYSA-M sodium;oxocalcium;hydroxide Chemical compound [OH-].[Na+].[Ca]=O HUAUNKAZQWMVFY-UHFFFAOYSA-M 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
- H01L31/0392—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate
- H01L31/03923—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including thin films deposited on metallic or insulating substrates ; characterised by specific substrate materials or substrate features or by the presence of intermediate layers, e.g. barrier layers, on the substrate including AIBIIICVI compound materials, e.g. CIS, CIGS
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (13)
- 基板と、
前記基板上に形成される背面電極層と、
前記背面電極層上に形成され、第2貫通溝を含む光吸収層と、
前記光吸収層上に形成されるウィンドウ層と、
前記背面電極層の内部に前記基板と前記背面電極層が接触する界面に形成されたバリア層と、
前記背面電極層の内部に前記背面電極層と前記光吸収層が接触する界面に形成されるオーミック層と、を含み、
前記バリア層と前記オーミック層は一部重なって配置される太陽電池。 - 前記オーミック層は、二セレン化モリブデン(MoSe2)を含む請求項1に記載の太陽電池。
- 前記オーミック層は、前記第2貫通溝が形成されていない領域に対応して形成される請求項1に記載の太陽電池。
- 前記バリア層はナトリウム拡散を防止する請求項1に記載の太陽電池。
- 前記バリア層は、前記第2貫通溝に対応する領域に形成された請求項1に記載の太陽電池。
- 前記バリア層の幅は前記背面電極層の幅の1/3〜2/3である請求項1に記載の太陽電池。
- 前記バリア層の厚さは前記背面電極層の厚さの1/5〜1/3である請求項1に記載の太陽電池。
- 前記バリア層はSiO2またはSiO4を含む請求項1に記載の太陽電池。
- 基板上に配置され、第1貫通溝を含む背面電極層と、
前記背面電極層上に配置され、第2貫通溝を含む光吸収層と、
前記光吸収層上に配置されるウィンドウ層と、
前記背面電極層の内部に前記基板と前記背面電極層が接触する界面に形成されたバリア層と、
前記背面電極層の内部に前記背面電極層と前記光吸収層が接触する界面に形成されたオーミック層とを含む太陽電池セルを、多数個含み、
前記バリア層と前記オーミック層は一部重なって配置される太陽電池モジュール。 - 前記太陽電池セルのそれぞれは、第3貫通溝によって分離される請求項9に記載の太陽電池モジュール。
- 前記バリア層は、前記第2貫通溝と前記第3貫通溝の間に対応して形成される請求項10に記載の太陽電池モジュール。
- 前記基板は、
前記太陽電池セルが配置される活性領域と、
前記活性領域の間に配置される非活性領域と、
を含む請求項9に記載の太陽電池モジュール。 - 前記バリア層は前記非活性領域に対応して配置され、
前記オーミック層は前記活性領域に対応して配置される請求項12に記載の太陽電池モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020110006989A KR101173401B1 (ko) | 2011-01-24 | 2011-01-24 | 태양전지 및 그의 제조방법 |
KR10-2011-0006989 | 2011-01-24 | ||
PCT/KR2011/007397 WO2012102451A1 (en) | 2011-01-24 | 2011-10-06 | Solar cell and manufacturing method of the same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2014503127A JP2014503127A (ja) | 2014-02-06 |
JP2014503127A5 JP2014503127A5 (ja) | 2014-11-13 |
JP5901656B2 true JP5901656B2 (ja) | 2016-04-13 |
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Application Number | Title | Priority Date | Filing Date |
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JP2013550372A Expired - Fee Related JP5901656B2 (ja) | 2011-01-24 | 2011-10-06 | 太陽電池およびその製造方法{solarcellandmanufacturingmethodofthesame} |
Country Status (6)
Country | Link |
---|---|
US (1) | US20130000700A1 (ja) |
EP (1) | EP2656395A4 (ja) |
JP (1) | JP5901656B2 (ja) |
KR (1) | KR101173401B1 (ja) |
CN (1) | CN103098231B (ja) |
WO (1) | WO2012102451A1 (ja) |
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US8763018B2 (en) | 2011-08-22 | 2014-06-24 | Solarflare Communications, Inc. | Modifying application behaviour |
US9391840B2 (en) | 2012-05-02 | 2016-07-12 | Solarflare Communications, Inc. | Avoiding delayed data |
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US9246039B2 (en) * | 2012-10-12 | 2016-01-26 | International Business Machines Corporation | Solar cell with reduced absorber thickness and reduced back surface recombination |
CN103904233B (zh) * | 2012-12-25 | 2016-04-20 | 海洋王照明科技股份有限公司 | 一种有机电致发光器件及其制备方法 |
US10742604B2 (en) | 2013-04-08 | 2020-08-11 | Xilinx, Inc. | Locked down network interface |
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KR20140141791A (ko) * | 2013-05-30 | 2014-12-11 | 삼성에스디아이 주식회사 | 태양전지 및 이의 제조방법 |
EP2809033B1 (en) | 2013-05-30 | 2018-03-21 | Solarflare Communications Inc | Packet capture in a network |
US10394751B2 (en) | 2013-11-06 | 2019-08-27 | Solarflare Communications, Inc. | Programmed input/output mode |
US20150206994A1 (en) * | 2014-01-23 | 2015-07-23 | Tsmc Solar Ltd. | Solar cell front contact with thickness gradient |
US9876049B2 (en) | 2014-12-05 | 2018-01-23 | Seiko Epson Corporation | Photoelectric conversion device, method for manufacturing photoelectric conversion device, and electronic apparatus |
CN106024937A (zh) * | 2016-06-23 | 2016-10-12 | 盐城普兰特新能源有限公司 | 一种cigs基薄膜太阳能电池及其制备方法 |
KR102089558B1 (ko) * | 2018-07-11 | 2020-03-16 | 주식회사 프런티어에너지솔루션 | 페로브스카이트 태양 전지 모듈 |
KR102182618B1 (ko) * | 2018-07-12 | 2020-11-24 | (주)프런티어에너지솔루션 | 페로브스카이트 태양 전지 모듈 및 페로브스카이트 태양 전지 모듈 제조 방법 |
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DE4442824C1 (de) * | 1994-12-01 | 1996-01-25 | Siemens Ag | Solarzelle mit Chalkopyrit-Absorberschicht |
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JP4730740B2 (ja) * | 2006-01-30 | 2011-07-20 | 本田技研工業株式会社 | 太陽電池およびその製造方法 |
US8389852B2 (en) * | 2006-02-22 | 2013-03-05 | Guardian Industries Corp. | Electrode structure for use in electronic device and method of making same |
KR101047941B1 (ko) * | 2007-10-31 | 2011-07-11 | 주식회사 엘지화학 | Ci(g)s 태양전지 후면 전극의 제조방법 |
KR20100006205A (ko) * | 2008-07-09 | 2010-01-19 | (주)텔리오솔라코리아 | Cigs 태양전지 모듈 및 그 제조방법 |
EP2200097A1 (en) * | 2008-12-16 | 2010-06-23 | Saint-Gobain Glass France S.A. | Method of manufacturing a photovoltaic device and system for patterning an object |
JP4782855B2 (ja) * | 2009-03-12 | 2011-09-28 | 昭和シェル石油株式会社 | 化合物系薄膜太陽電池、及びその製造方法 |
TWI520367B (zh) * | 2010-02-09 | 2016-02-01 | 陶氏全球科技公司 | 具透明導電阻擋層之光伏打裝置 |
JP5667027B2 (ja) * | 2010-11-02 | 2015-02-12 | 富士フイルム株式会社 | 太陽電池サブモジュール及びその製造方法、電極付き基板 |
-
2011
- 2011-01-24 KR KR1020110006989A patent/KR101173401B1/ko not_active IP Right Cessation
- 2011-10-06 US US13/634,440 patent/US20130000700A1/en not_active Abandoned
- 2011-10-06 CN CN201180042768.XA patent/CN103098231B/zh not_active Expired - Fee Related
- 2011-10-06 WO PCT/KR2011/007397 patent/WO2012102451A1/en active Application Filing
- 2011-10-06 EP EP11855921.0A patent/EP2656395A4/en not_active Withdrawn
- 2011-10-06 JP JP2013550372A patent/JP5901656B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
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JP2014503127A (ja) | 2014-02-06 |
EP2656395A1 (en) | 2013-10-30 |
US20130000700A1 (en) | 2013-01-03 |
CN103098231B (zh) | 2016-08-03 |
EP2656395A4 (en) | 2017-06-21 |
KR101173401B1 (ko) | 2012-08-10 |
KR20120085573A (ko) | 2012-08-01 |
CN103098231A (zh) | 2013-05-08 |
WO2012102451A1 (en) | 2012-08-02 |
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