JP2013536996A - 太陽光発電装置及びその製造方法 - Google Patents
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- 238000010248 power generation Methods 0.000 title claims abstract description 46
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000031700 light absorption Effects 0.000 claims abstract description 68
- 239000000758 substrate Substances 0.000 claims abstract description 33
- 230000000149 penetrating effect Effects 0.000 claims abstract description 7
- 239000000872 buffer Substances 0.000 claims description 49
- 238000000034 method Methods 0.000 claims description 39
- 238000005530 etching Methods 0.000 claims description 9
- 238000001039 wet etching Methods 0.000 claims description 5
- 230000001681 protective effect Effects 0.000 claims description 2
- 230000001678 irradiating effect Effects 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 7
- 229910052738 indium Inorganic materials 0.000 description 7
- 238000004544 sputter deposition Methods 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
【選択図】図2
Description
Claims (17)
- 基板と、
前記基板の上に配置される裏面電極層と、
前記裏面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置されるウィンドウ層と、を含み、
前記ウィンドウ層の全体及び前記光吸収層の一部を貫通する第3貫通溝が形成されることを特徴とする、太陽光発電装置。 - 前記裏面電極層を貫通し、前記第3貫通溝に隣接する第1貫通溝が形成され、
前記光吸収層を貫通し、前記第1貫通溝及び前記第3貫通溝の間に第2貫通溝が形成されることを特徴とする、請求項1に記載の太陽光発電装置。 - 前記第3貫通溝の内側面は前記ウィンドウ層の上面に対して傾斜することを特徴とする、請求項1に記載の太陽光発電装置。
- 前記ウィンドウ層の上面に垂直な方向に対し、前記第3貫通溝の内側面の角度は約3゜乃至約10゜であることを特徴とする、請求項3に記載の太陽光発電装置。
- 前記光吸収層及び前記ウィンドウ層の間に介されるバッファ層を含み、
前記第3貫通溝は、前記バッファ層の全体を貫通することを特徴とする、請求項1に記載の太陽光発電装置。 - 前記第3貫通溝の底面は前記光吸収層の上面及び下面の間に位置することを特徴とする、請求項1に記載の太陽光発電装置。
- 基板と、
前記基板の上に配置される裏面電極層と、
前記裏面電極層の上に配置される光吸収層と、
前記光吸収層の上に配置され、第3貫通溝が形成されるウィンドウ層と、
前記第3貫通溝及び前記裏面電極層の間に介されるダミー保護部と、
を含むことを特徴とする、太陽光発電装置。 - 前記ダミー保護部は前記光吸収層と一体形成されることを特徴とする、請求項7に記載の太陽光発電装置。
- 前記ダミー保護部は前記第3貫通溝に対応することを特徴とする、請求項7に記載の太陽光発電装置。
- 前記ダミー保護部の上面は前記光吸収層の上面及び下面の間に配置されることを特徴とする、請求項7に記載の太陽光発電装置。
- 前記ダミー保護部は前記裏面電極層の上面を覆うことを特徴とする、請求項7に記載の太陽光発電装置。
- 前記ダミー保護部の上面は前記第3貫通溝の底面と一致することを特徴とする、請求項7に記載の太陽光発電装置。
- 前記光吸収層及び前記ウィンドウ層の間に介されるバッファ層を含み、
前記第3貫通溝は前記バッファ層及び前記光吸収層の一部を貫通することを特徴とする、請求項7に記載の太陽光発電装置。 - 基板の上に裏面電極層を形成するステップと、
前記裏面電極層の上に光吸収層を形成するステップと、
前記光吸収層の上にウィンドウ層を形成するステップと、
前記ウィンドウ層の全体及び前記光吸収層の一部を貫通する第3貫通溝を形成するステップと、
を含むことを特徴とする、太陽光発電装置の製造方法。 - 前記第3貫通溝を形成するステップは、
前記ウィンドウ層の上にマスクパターンを形成するステップと、
前記マスクパターンをエッチングマスクとして使用して、前記ウィンドウ層及び前記光吸収層をエッチングするステップと、
を含むことを特徴とする、請求項14に記載の太陽光発電装置の製造方法。 - 前記第3貫通溝を形成するステップで、
前記ウィンドウ層及び前記光吸収層は湿式エッチング法によりパターニングすることを特徴とする、請求項14に記載の太陽光発電装置の製造方法。 - 前記第3貫通溝を形成するステップは、
前記光吸収層にレーザーを照射するステップを含むことを特徴とする、請求項14に記載の太陽光発電装置の製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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KR1020100085584A KR101172178B1 (ko) | 2010-09-01 | 2010-09-01 | 태양광 발전장치 및 이의 제조방법 |
KR10-2010-0085584 | 2010-09-01 | ||
PCT/KR2011/003119 WO2012030046A1 (ko) | 2010-09-01 | 2011-04-27 | 태양광 발전장치 및 이의 제조방법 |
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JP2013536996A true JP2013536996A (ja) | 2013-09-26 |
JP2013536996A5 JP2013536996A5 (ja) | 2014-06-19 |
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JP2013526987A Pending JP2013536996A (ja) | 2010-09-01 | 2011-04-27 | 太陽光発電装置及びその製造方法 |
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Country | Link |
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US (1) | US20130019943A1 (ja) |
EP (1) | EP2538453A1 (ja) |
JP (1) | JP2013536996A (ja) |
KR (1) | KR101172178B1 (ja) |
CN (1) | CN103069576A (ja) |
WO (1) | WO2012030046A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016540248A (ja) * | 2013-12-03 | 2016-12-22 | セイジ・エレクトロクロミクス,インコーポレイテッド | 電気活性素子および電気活性素子の作製方法 |
Families Citing this family (1)
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MY171609A (en) * | 2012-05-03 | 2019-10-21 | Nexcis | Laser etching a stack of thin layers for a connection of a photovoltaic cell |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS6041266A (ja) * | 1983-08-15 | 1985-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法およびその作製用装置 |
JP2001156320A (ja) * | 1999-11-29 | 2001-06-08 | Canon Inc | 半導体素子の製造方法 |
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
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JP4785827B2 (ja) * | 2007-12-27 | 2011-10-05 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
DE102008060404A1 (de) * | 2008-07-30 | 2010-02-11 | Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh | Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht |
KR20100030944A (ko) * | 2008-09-11 | 2010-03-19 | 엘지이노텍 주식회사 | 태양전지의 제조방법 |
US20100288335A1 (en) * | 2009-10-02 | 2010-11-18 | Sunlight Photonics Inc. | Degradation-resistant photovoltaic devices |
EP2534700A4 (en) * | 2010-02-12 | 2015-04-29 | Solexel Inc | DOUBLE-SIDED REUSABLE SHAPE FOR MANUFACTURING SEMICONDUCTOR SUBSTRATES FOR MANUFACTURING PHOTOVOLTAIC CELLS AND MICROELECTRONIC DEVICES |
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2010
- 2010-09-01 KR KR1020100085584A patent/KR101172178B1/ko active IP Right Grant
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2011
- 2011-04-27 US US13/639,683 patent/US20130019943A1/en not_active Abandoned
- 2011-04-27 JP JP2013526987A patent/JP2013536996A/ja active Pending
- 2011-04-27 CN CN2011800397400A patent/CN103069576A/zh active Pending
- 2011-04-27 WO PCT/KR2011/003119 patent/WO2012030046A1/ko active Application Filing
- 2011-04-27 EP EP11822021A patent/EP2538453A1/en not_active Withdrawn
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6041266A (ja) * | 1983-08-15 | 1985-03-04 | Semiconductor Energy Lab Co Ltd | 半導体装置作製方法およびその作製用装置 |
JP2001156320A (ja) * | 1999-11-29 | 2001-06-08 | Canon Inc | 半導体素子の製造方法 |
JP2001274447A (ja) * | 2000-03-23 | 2001-10-05 | Kanegafuchi Chem Ind Co Ltd | 集積型薄膜太陽電池の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2016540248A (ja) * | 2013-12-03 | 2016-12-22 | セイジ・エレクトロクロミクス,インコーポレイテッド | 電気活性素子および電気活性素子の作製方法 |
US11194211B2 (en) | 2013-12-03 | 2021-12-07 | Sage Electrochromics, Inc. | Methods for producing lower electrical isolation in electrochromic films |
Also Published As
Publication number | Publication date |
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KR101172178B1 (ko) | 2012-08-07 |
EP2538453A1 (en) | 2012-12-26 |
CN103069576A (zh) | 2013-04-24 |
WO2012030046A1 (ko) | 2012-03-08 |
US20130019943A1 (en) | 2013-01-24 |
KR20120022231A (ko) | 2012-03-12 |
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