KR101055019B1 - 태양광 발전장치 및 이의 제조방법 - Google Patents
태양광 발전장치 및 이의 제조방법 Download PDFInfo
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- KR101055019B1 KR101055019B1 KR1020090027876A KR20090027876A KR101055019B1 KR 101055019 B1 KR101055019 B1 KR 101055019B1 KR 1020090027876 A KR1020090027876 A KR 1020090027876A KR 20090027876 A KR20090027876 A KR 20090027876A KR 101055019 B1 KR101055019 B1 KR 101055019B1
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 7
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000010297 mechanical methods and process Methods 0.000 claims 1
- 239000000463 material Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 229910052733 gallium Inorganic materials 0.000 description 8
- 229910052738 indium Inorganic materials 0.000 description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- 238000010248 power generation Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 239000011669 selenium Substances 0.000 description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 3
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- YNLHHZNOLUDEKQ-UHFFFAOYSA-N copper;selanylidenegallium Chemical compound [Cu].[Se]=[Ga] YNLHHZNOLUDEKQ-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- -1 electrode Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0463—PV modules composed of a plurality of thin film solar cells deposited on the same substrate characterised by special patterning methods to connect the PV cells in a module, e.g. laser cutting of the conductive or active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
- H01L31/0465—PV modules composed of a plurality of thin film solar cells deposited on the same substrate comprising particular structures for the electrical interconnection of adjacent PV cells in the module
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0749—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type including a AIBIIICVI compound, e.g. CdS/CulnSe2 [CIS] heterojunction solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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Abstract
Description
Claims (9)
- 기판 상에 배치되며, 제 1 관통홈이 형성된 전극층;상기 전극층 상에 배치되며, 상기 제 1 관통홈에 인접하여 형성되는 제 2 관통홈이 형성된 광 흡수층;상기 광 흡수층 상에 배치되며, 상기 제 2 관통홈에 중첩하는 제 3 관통홈이 형성된 윈도우층; 및상기 제 2 관통홈에 배치되며, 상기 윈도우층으로부터 연장되여, 상기 전극층에 직접 접속되는 접속부를 포함하고,상기 전극층은 몰리브덴을 포함하고,상기 광 흡수층은 구리-인듐-갈륨-셀레나이드계 화합물을 포함하고,상기 윈도우층은 알루미늄이 도핑된 징크 옥사이드를 포함하고,상기 제 3 관통홈 전체는 상기 제 2 관통홈에 중첩되고,상기 윈도우층 및 상기 접속부는 일체로 형성되는 태양광 발전장치.
- 제 1 항에 있어서, 상기 제 2 관통홈의 일 내측면은 상기 제 3 관통홈의 일 내측면과 동일한 평면에 배치되는 태양광 발전장치.
- 삭제
- 제 1 항에 있어서, 상기 제 2 관통홈의 폭은 상기 제 3 관통홈의 폭보다 더 큰 태양광 발전장치.
- 제 1 항에 있어서, 상기 제 2 관통홈 및 상기 제 3 관통홈은 상기 전극층의 상면을 노출하는 태양광 발전장치.
- 기판 상에 전극층을 형성하는 단계;상기 전극층의 일부를 제거하여 제 1 관통홈을 형성하는 단계;상기 전극층 상에 광 흡수층을 형성하는 단계;상기 광 흡수층의 일부를 제거하여, 상기 제 1 관통홈에 인접하는 제 2 관통홈을 형성하는 단계;상기 광 흡수층 상에 윈도우층을 형성하는 단계; 및상기 윈도우층의 일부를 제거하여, 상기 제 2 관통홈에 중첩하는 제 3 관통홈을 형성하는 단계를 포함하고,상기 전극층은 몰리브덴을 포함하고,상기 광 흡수층은 구리-인듐-갈륨-셀레나이드계 화합물을 포함하고,상기 윈도우층은 알루미늄이 도핑된 징크 옥사이드를 포함하고,상기 제 3 관통홈 전체는 상기 제 2 관통홈에 중첩되고,상기 윈도우층을 형성하는 단계에서, 상기 제 2 관통홈의 내측에 상기 윈도우층과 동일한 도전물질이 채워지고,상기 제 3 관통홈을 형성하는 단계에서, 상기 도전물질의 일부가 기계적인 방식에 의해서 제거되어, 상기 전극층의 상면이 노출되는 태양광 발전장치의 제조방법.
- 삭제
- 기판 상에 전극층을 형성하는 단계;상기 전극층의 일부를 제거하여 제 1 관통홈을 형성하는 단계;상기 전극층 상에 광 흡수층을 형성하는 단계;상기 광 흡수층의 일부를 제거하여, 상기 제 1 관통홈에 인접하는 제 2 관통홈을 형성하는 단계;상기 광 흡수층 상에 윈도우층을 형성하는 단계; 및상기 윈도우층의 일부를 제거하여, 상기 제 2 관통홈에 중첩하는 제 3 관통홈을 형성하는 단계를 포함하고,상기 전극층은 몰리브덴을 포함하고,상기 광 흡수층은 구리-인듐-갈륨-셀레나이드계 화합물을 포함하고,상기 윈도우층은 알루미늄이 도핑된 징크 옥사이드를 포함하고,상기 제 3 관통홈의 일부는 상기 제 2 관통홈에 중첩되고,상기 윈도우층을 형성하는 단계에서, 상기 제 2 관통홈의 내측에 상기 윈도우층과 동일한 도전물질이 채워지고,상기 제 3 관통홈을 형성하는 단계에서, 상기 도전물질의 일부 및 상기 광 흡수층의 일부가 동시에 제거되어, 상기 전극층의 상면이 노출되고,상기 제 2 관통홈은상기 제 1 관통홈에 인접하는 제 1 측면; 및상기 제 1 측면에 대향하고, 상기 제 1 관통홈으로부터 상기 제 1 측면보다 더 멀리 떨어지는 제 2 측면을 포함하고,상기 광 흡수층의 일부가 제거되는 단계에서, 상기 제 2 측면이 제거되는 태양광 발전장치의 제조방법.
- 제 6 항에 있어서, 상기 제 2 관통홈의 일 내측면은 상기 제 3 관통홈의 일 내측면과 동일한 평면에 배치되는 태양광 발전장치의 제조방법.
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
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KR1020090027876A KR101055019B1 (ko) | 2009-03-31 | 2009-03-31 | 태양광 발전장치 및 이의 제조방법 |
JP2012503326A JP2012522393A (ja) | 2009-03-31 | 2010-03-30 | 太陽光発電装置及びその製造方法 |
PCT/KR2010/001953 WO2010114294A2 (ko) | 2009-03-31 | 2010-03-30 | 태양광 발전장치 및 이의 제조방법 |
US13/262,413 US20120186634A1 (en) | 2009-03-31 | 2010-03-30 | Solar cell apparatus and method of fabricating the same |
EP10759019.2A EP2416376A4 (en) | 2009-03-31 | 2010-03-30 | Solar photovoltaic power generation apparatus and manufacturing method thereof |
CN201080023970.3A CN102449780B (zh) | 2009-03-31 | 2010-03-30 | 太阳能电池装置及其制造方法 |
US14/060,184 US20140041725A1 (en) | 2009-03-31 | 2013-10-22 | Solar cell apparatus and method of fabricating the same |
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KR1020090027876A KR101055019B1 (ko) | 2009-03-31 | 2009-03-31 | 태양광 발전장치 및 이의 제조방법 |
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KR101405639B1 (ko) * | 2012-07-27 | 2014-06-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
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KR101168810B1 (ko) | 2010-10-29 | 2012-07-25 | 엘지이노텍 주식회사 | 태양광 발전장치 및 이의 제조방법 |
KR101349571B1 (ko) * | 2012-04-26 | 2014-01-17 | 엘지이노텍 주식회사 | 태양광 발전장치 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11195795A (ja) | 1998-01-05 | 1999-07-21 | Kanegafuchi Chem Ind Co Ltd | 集積型シリコン系薄膜光電変換装置とその製造方法 |
JP2007005345A (ja) * | 2005-06-21 | 2007-01-11 | Mitsubishi Heavy Ind Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
WO2008065970A1 (fr) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Module de cellule solaire et procédé de fabrication de module de cellule solaire |
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Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH11195795A (ja) | 1998-01-05 | 1999-07-21 | Kanegafuchi Chem Ind Co Ltd | 集積型シリコン系薄膜光電変換装置とその製造方法 |
JP2007005345A (ja) * | 2005-06-21 | 2007-01-11 | Mitsubishi Heavy Ind Ltd | 太陽電池モジュール及び太陽電池モジュールの製造方法 |
WO2008065970A1 (fr) * | 2006-11-30 | 2008-06-05 | Sanyo Electric Co., Ltd. | Module de cellule solaire et procédé de fabrication de module de cellule solaire |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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KR101405639B1 (ko) * | 2012-07-27 | 2014-06-11 | 엘지이노텍 주식회사 | 태양전지 및 이의 제조 방법 |
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