WO2011001962A1 - 光電変換素子の製造方法、光電変換素子の製造装置および光電変換素子 - Google Patents
光電変換素子の製造方法、光電変換素子の製造装置および光電変換素子 Download PDFInfo
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- WO2011001962A1 WO2011001962A1 PCT/JP2010/061030 JP2010061030W WO2011001962A1 WO 2011001962 A1 WO2011001962 A1 WO 2011001962A1 JP 2010061030 W JP2010061030 W JP 2010061030W WO 2011001962 A1 WO2011001962 A1 WO 2011001962A1
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- photoelectric conversion
- conversion element
- electrode
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/5313—Means to assemble electrical device
Definitions
- the present invention relates to a photoelectric conversion element, a manufacturing method thereof, and a photoelectric conversion element manufacturing apparatus.
- a photoelectric conversion element composed of a chalcopyrite semiconductor layer and an amorphous silicon semiconductor layer represented by CIS (copper indium selenide) is relatively low in cost and can easily increase the area of the photoelectric conversion module. Therefore, research and development is underway.
- This chalcopyrite photoelectric conversion element has semiconductor layers such as a light absorption layer and a buffer layer. Since such a light absorption layer and a buffer layer are several micrometers in thickness, the location where the film
- amorphous silicon-based photoelectric conversion elements may similarly decrease.
- a reverse bias voltage is applied to the photoelectric conversion element, and the heat generation point at that time is observed with an infrared camera to identify the leak current generation point.
- a repair method is known in which a laser beam is irradiated to the leak current generation portion and an electrode in the portion is removed (see Patent Document 1).
- the semiconductor layer of amorphous silicon and chalcopyrite is irradiated with laser light to the part where the physical properties are abnormal in order to remove a part of the semiconductor layer, the semiconductor layer is melted and further irradiated with laser light.
- the film quality deteriorates due to an increase in the temperature of the film, resulting in a decrease in photoelectric conversion efficiency.
- the copper-based compound contained therein may short-circuit the upper electrode and the lower electrode.
- An object of the present invention is to provide a highly efficient photoelectric conversion element by satisfactorily separating portions having abnormal physical properties generated in the photoelectric conversion element.
- One embodiment according to the method for producing a photoelectric conversion element of the present invention includes a specifying step of specifying a physical property abnormality point for a structure having a photoelectric conversion body including a semiconductor layer between a pair of first and second electrodes, A separation step of separating the abnormal physical property portion by machining.
- One embodiment of the photoelectric conversion element manufacturing apparatus of the present invention is a photoelectric conversion element having a mechanism that separates abnormal physical properties of a structure having a photoelectric conversion body including a semiconductor layer between a pair of first and second electrodes. And a voltage applying unit that applies a bias voltage to the structure, and a detection unit that detects the intensity of electromagnetic waves emitted from the structure. Furthermore, in one embodiment of the photoelectric conversion element manufacturing apparatus of the present invention, the specific unit that identifies the physical property abnormality location by the intensity of the electromagnetic wave, and machining the structural body, the physical property abnormality location And a machining unit for separation.
- One embodiment according to the photoelectric conversion element of the present invention includes a structure having a photoelectric conversion body including a semiconductor layer between a pair of first and second electrodes, and the structure has an abnormality in physical properties by machining. Is separated.
- the method for manufacturing a photoelectric conversion element and the apparatus for manufacturing a photoelectric conversion element of the present invention by separating the abnormal physical property part of the structure of the photoelectric conversion element using machining, The temperature rise in the periphery can be suppressed. And in this embodiment, since the physical property abnormality location is isolate
- FIG. 1 It is sectional drawing which shows an example of the structure of the photoelectric conversion element which concerns on this invention. It is a block diagram explaining an example of the manufacturing method of the photoelectric conversion element which concerns on this invention. An example of the manufacturing apparatus of the photoelectric conversion element which concerns on this invention is shown. It is a perspective view which shows one implementation state of the machining which concerns on this invention.
- (A)-(c) is the perspective view which showed an example of the photoelectric conversion element after giving a machining in a isolation
- (A)-(c) is a top view which shows various embodiment of the front-end
- FIG. 2 shows an example of a photoelectric conversion element after machining in a separation step, where (a) is a plan view viewed from the window layer side, and (b) to (d) are cross-sectional views. (A) And (b) is a perspective view which shows various embodiment of the front-end
- Embodiments of the photoelectric conversion element of the present invention will be described. In the following embodiments, description will be made using a form of a photoelectric conversion element having a chalcopyrite semiconductor layer.
- the chalcopyrite photoelectric conversion element has a structure including a photoelectric conversion body including a chalcopyrite compound semiconductor layer and a pair of electrodes (first and second electrodes).
- This photoelectric converter may include a buffer layer heterojunction to the semiconductor layer of the chalcopyrite compound.
- the electrodes include those made of a semiconductor layer, and also include what is called a window layer.
- a photoelectric conversion element 1 shown in FIG. 1 includes a substrate 2, a back electrode 3 as a first electrode, a semiconductor layer 4 of a chalcopyrite compound, a buffer layer 5, and a window layer 6 as a second electrode.
- the photoelectric conversion body 1 a is configured by the semiconductor 4 and the buffer layer 5.
- the structure 1b is comprised from the back surface electrode 3, the photoelectric conversion body 1a, and the 2nd electrode.
- the substrate 2 is made of, for example, blue plate glass (soda lime glass) having a thickness of about 1 to 3 mm.
- the back electrode 3 is made of, for example, a metal such as molybdenum, titanium, or tantalum having a thickness of about 0.2 to 1 ⁇ m, or a metal laminate thereof.
- the semiconductor layer 4 of the chalcopyrite compound has a role as a light absorption layer.
- the semiconductor layer 4 is a semiconductor thin film having a chalcopyrite structure having a p-type conductivity and having a thickness of about 1 to 3 ⁇ m. Copper indium diselenide, indium diselenide / gallium, indium diselenide / indium copper sulfide. It is a multi-component compound semiconductor thin film such as gallium, copper indium disulfide, gallium or thin film selenium, copper indium sulfide, copper indium selenide, and gallium layer as a surface layer.
- the buffer layer 5 is a mixed crystal compound semiconductor such as cadmium sulfide (CdS), indium sulfide (In 2 S 3 ), and zinc sulfide (ZnS).
- CdS cadmium sulfide
- In 2 S 3 indium sulfide
- ZnS zinc sulfide
- the window layer 6 is made of, for example, zinc oxide (ZnO) or aluminum, boron, gallium, indium, fluorine, etc. having a forbidden band width having an n-type conductivity, a transparent, low resistance, and a thickness of about 1 to 2 ⁇ m. It is a semiconductor thin film made of a metal oxide made of a compound with zinc oxide, tin-containing indium tin oxide (ITO), tin oxide (SnO 2 ), or the like.
- the window layer 6 can be regarded as one electrode (second electrode) constituting the photoelectric conversion element 1.
- a transparent conductive film may be further formed in addition to the window layer 6, and the window layer 6 and the transparent conductive film may be combined and regarded as the second electrode.
- the back electrode 3 is formed on substantially the entire surface of the cleaned substrate 2 using a sputtering method or the like.
- the rear electrode 3 is patterned by forming a dividing groove on the formed rear electrode 3 using a YAG laser or the like.
- a chalcopyrite compound semiconductor layer 4 is formed on the back electrode 3 on which this pattern is formed by using a sputtering method, a vapor deposition method, a printing method, or the like.
- the buffer layer 5 is formed using a solution growth method (CBD method) or the like.
- Separation grooves are formed and patterned by mechanical scribing in the chalcopyrite compound semiconductor layer 4 and the buffer layer 5 formed on substantially the entire surface of the back electrode 3. Thereafter, the window layer 6 is formed on substantially the entire surface of the buffer layer 5 by sputtering, metal organic chemical vapor deposition (MOCVD), etc., and separation grooves are formed by mechanical scribing and patterned.
- the grid electrode may be formed by printing a silver paste or the like on the window layer 6 to reduce the resistance.
- the photoelectric conversion element 1 has a structure in which the substrate 2, the back electrode 3, the chalcopyrite compound semiconductor layer 4, the buffer layer 5, and the window layer 6 are laminated in this order from the back side, and each layer is patterned.
- a forward bias voltage is applied between the electrodes of the photoelectric conversion element 1 by forward bias voltage applying means A (voltage application unit).
- EL electroluminescence
- the current density distribution in the photoelectric conversion element when the forward bias voltage is applied can be determined. From the non-uniformity of the current density distribution, the physical property abnormality portion in the photoelectric conversion element 1 can be identified. I can know. That is, in a portion where the EL intensity is not emitted or a portion where the emission intensity is small compared to other portions, a portion having a high pn junction defect, the presence of microcracks, a composition shift, a defect density that is likely to cause recombination, each layer, electrode and semiconductor It can be seen that there is a failure event such as an abnormality in contact resistance between layers.
- the abnormal location specifying means C (specific unit) observes the state of EL emission on the observation surface of the photoelectric conversion element 1 to identify an abnormal physical property location (hereinafter, sometimes simply referred to as an abnormal location).
- the coordinates of the location are stored in the abnormal location storage means D.
- the photoelectric conversion element 1 includes a separation step of separating a physical property abnormality portion of the photoelectric conversion element 1 by machining.
- the step of identifying the physical property abnormality location of the photoelectric conversion element 1 by using the EL light emission detector B, not only the location where the leakage current is generated due to the film physical property abnormality but also the presence of a pn junction defect and a micro crack.
- the means for identifying the physical property abnormality location is not limited to the EL light emission detection, and may detect infrared rays generated when a forward bias voltage or a reverse bias voltage is applied to the photoelectric conversion element 1. As described above, by detecting the intensity distribution of electromagnetic waves such as EL and infrared rays, it is possible to identify an abnormality in physical properties of the photoelectric conversion element 1.
- the photoelectric conversion element manufacturing apparatus in the present embodiment includes a mounting table 9, a voltage application unit 10, an observation camera 11 that forms part of a detection unit, a computer 12 that is a specific unit, and a display 13. ing. Further, the photoelectric conversion element manufacturing apparatus according to the present embodiment includes a machining unit X including a sequencer 14, a servo motor 15, a scriber up-and-down means 16, and a scriber 17.
- the mounting table 9 is made of, for example, a stainless steel flat plate having a thickness of about 10 mm, and a plurality of through holes (not shown) are provided at a substantially central portion thereof. Then, the pressure reducing means such as a vacuum pump arranged in the vicinity of the mounting table 9 allows the photoelectric conversion element 1 mounted on the mounting table 9 to be fixed at a predetermined position through the through hole. It is. Further, the mounting table 9 can be moved freely in the XY directions by being driven by two servo motors 15 controlled by the sequencer 14.
- the scriber 17 is moved up and down by a scriber up-and-down means 16 controlled by a sequencer 14 such as an air cylinder.
- the photoelectric conversion element 1 mounted and fixed at a predetermined position on the mounting table 9 applies a forward bias voltage between its electrodes (between the back electrode 3 and the window layer 6) by the voltage application unit 10. Is done. That is, the voltage application unit has a role of applying a bias voltage to the structure 1b including the photoelectric conversion body 1a and the pair of electrodes.
- the applied bias voltage value in the photoelectric conversion element 1 is suitably about 0.2 to 1 V per unit cell connected in series in the photoelectric conversion element 1, and the actually applied voltage value is This is multiplied by the number of series in the photoelectric conversion element 1.
- the photoelectric conversion element 1 Since the photoelectric conversion element 1 emits EL light at an abnormal physical property when a bias voltage is applied, the EL light emission state is imaged by the observation camera 11 and the image signal is sent to the computer 12. That is, the detection unit including the observation camera 11 has a role of detecting the intensity of electromagnetic waves such as EL emission emitted from the structure 1 b that forms part of the photoelectric conversion element 1.
- the sent image signal is displayed on the display 13, and the computer 12 A / D converts the EL light emission state of the photoelectric conversion element 1, and the obtained multi-valued image having a predetermined gray level is obtained. Binarization is performed using a threshold value, a dark part is specified, this dark part is determined as a physical property abnormality location, and the two-dimensional coordinates are stored.
- the imaging by the observation camera 11 in the EL light emission state is performed in a dark room or a dark box in order to avoid the influence of stray light.
- the servo motor 15 is controlled by the sequencer 14, and the placement table 9 on which the photoelectric conversion element 1 is placed is moved to a scribing position where mechanical properties are separated, and further, as shown in FIG. An abnormal portion of the photoelectric conversion element 1 is brought to a position immediately below the scriber 17. Thereafter, by combining the raising and lowering of the scriber 17 by the scriber raising / lowering means 16 and the movement of the mounting table 9 (photoelectric conversion element 1), mechanical scribing is performed on the film around the abnormal part of the photoelectric conversion element 1, and the film of the abnormal part is obtained. Is separated from the normal part by electrically separating or removing from the periphery.
- the photoelectric conversion element 1 after mechanical scribe has an abnormal portion 19 formed of a groove 20 or a groove 21 formed by mechanical scribe from another normal portion. It is separated.
- FIG. 5C shows an example in which the groove 22 is formed so as to remove the abnormal part from the structure 1 b of the photoelectric conversion element 1.
- a part where the abnormal part 19 is removed from the structure 1 b is referred to as a first part 22.
- the abnormal portion is electrically separated from the peripheral portion by removing a part of the structure 1b in a linear manner so as to surround the abnormal portion.
- the part is defined as a second part. That is, in this embodiment, the groove 20 or the groove 21 corresponds to the second part.
- Examples of the machining unit used in the separation process for separating such abnormal portions by machining include a diamond scriber having a sharp diamond piece fixed to the scriber 17 or a tungsten carbide carbide blade. Used. Then, as shown in FIG. 5 (a), a groove 20 is formed by mechanical scribe so as to surround the abnormal portion 19, and the back electrode 3, chalcopyrite compound semiconductor layer 4, buffer layer 5 and window of this portion are formed. This is done by electrically separating the layer 6, grid electrodes (not shown), etc. from the peripheral portion.
- peripheral portion 21 of the abnormal portion 19 is removed in a circular shape as shown in FIG. 5B using a scriber 17 with a surface diamond file, sandpaper, or a metal brush attached thereto. Is also possible. Thereby, in addition to the effect peculiar to the mechanical scribe described above, the separation (repair) of the abnormal portion 19 in a relatively large area can be efficiently performed.
- the back electrode 3, the chalcopyrite compound semiconductor layer 4, the buffer layer 5, the window layer 6, and the grid electrode (not shown) constituting the photoelectric conversion element 1 are all removed. Since it is only necessary to suppress the contact between the back electrode 3 and the window layer 6 in the separation step, the window layer 6 alone may be removed, or the window layer 6 and the grid electrode may be removed.
- the separation step is performed with the back electrode 3 left on the one main surface of the substrate 2. Is preferred. In this case, a scratch caused by the contact of the tip of the scriber 17 is formed on the back electrode 3 having a relatively higher elastic modulus than that of the glass substrate 2, so that a crack grows starting from the scratch. Can be suppressed.
- the groove-shaped first portion 22 for removing the abnormal portion as shown in FIG. 5C from the structure 1b of the photoelectric conversion element 1 is formed, it is mixed in the photoelectric conversion element 1. Since it is possible to suppress the occurrence of a problem such that an abnormal location and a normal location are in contact with each other through a conductive material or the like, the reliability of the photoelectric conversion element 1 can be further improved.
- the scriber 17 has, for example, a flat plate shape with a thickness of about 0.1 to 0.5 mm.
- the width of the scriber 17 is, for example, about 0.2 to 3.0 mm.
- the scriber 17 is provided so as to rotate about the rotation shaft 23.
- the tip of the scriber 17 shown in FIG. 6A has a shape having a horizontal portion 24a and an inclined portion 24b, and has a flat plate shape as a whole.
- the size of the horizontal portion 24a is, for example, about 1/10 to 1/5 of the width of the tip portion of the scriber 17.
- the other end of the scriber 17 is connected to a motor or the like.
- the horizontal portion 24 a is rotated at a speed of about 10 to 100 revolutions per second while the rotating shaft 23 of the scriber 17 is aligned with the substantially central portion of the abnormal portion 19, and the back electrode 3 of the photoelectric conversion element 1.
- the scriber 17 is pushed down until it comes into contact.
- the semiconductor layer 4, the buffer layer 5, and the window layer 6 corresponding to the abnormal portion 19 can be separated from normal portions by the rotation of the horizontal portion 24 a.
- the tip portion thereof may be a rectangular shape 25 having a constant thickness and width as shown in FIG. 6B, for example.
- the thickness of the tip portion of the scriber 17 may be a shape such that the thickness gradually decreases toward the tip.
- the scriber 17 may have a shape in which the surface of the tip portion is recessed in an arc shape 26 as shown in FIG.
- the cross-sectional area is reduced from the window layer 6 side toward the back electrode 3 side. If it is such a form, the internal peripheral surface of the structure 1b which faces the 1st site
- part 22 is not restricted to the taper shape shown in FIG.7 (b), The form that a cross-sectional area becomes small in steps may be sufficient.
- a hole provided along the stacking direction of the back electrode 3, the photoelectric conversion body 1a, and the window layer 6 is formed as the first portion 22.
- the first hole 22a when viewed from the front surface side of the back electrode 3 by the first hole 22a penetrating the back electrode 3 and the photoelectric converter 1a and the second hole 22b penetrating the window layer 6. Is preferably formed so as to be located inside the second hole 22b. In such a form, the distance between the back electrode 3 exposed on the inner peripheral surface of the structure 1b and the window layer 6 can be made longer, so that the occurrence of the short circuit as described above can be further reduced. it can.
- the first part 22 or the grooves 20 and 21 (second part) formed in the structure 1b is preferable to cover the first part 22 or the grooves 20 and 21 (second part) formed in the structure 1b with a resin. If it has such a process, it can control that moisture and oxygen enter into photoelectric conversion object 1a from the repaired 1st part or 2nd part, and photoelectric conversion object 1a deteriorates, and decline in photoelectric conversion efficiency can be carried out. Can be suppressed.
- the resin described above may be colored so that it looks the same as the other parts when the photoelectric conversion element 1 is viewed from the light receiving surface side.
- a resin a resin having high insulation and adhesiveness and excellent weather resistance is suitable.
- an epoxy resin, a phenol resin, a polyurethane resin, a polyimide resin, a melamine resin, or the like can be used.
- the tip portion of the scriber 17 is formed into a semicircular shape 27 as shown in FIG. What is necessary is just to select suitably the shape of the front-end
- a reverse bias voltage is applied to the photoelectric conversion element 1 to generate heat at the leaked part, and infrared rays emitted therefrom are observed with an infrared camera to identify the leaked part. It is also possible to perform mechanical scribing at the leak location as described above. At this time, it is preferable to apply a reverse bias voltage after frequency modulation. Thereby, it can suppress that the photoelectric conversion body 1a containing the chalcopyrite type compound semiconductor layer of the circumference
- the EL light emission detection means B having different resolutions may be used a plurality of times. As a result, it is possible to detect a defective portion of several ⁇ m level from a large photoelectric conversion element substrate having a side of 1 m or more.
- the photoelectric conversion element 1 includes the chalcopyrite semiconductor layer 4.
- the photoelectric conversion element 1 can be applied to a photoelectric conversion element including an amorphous silicon semiconductor layer, for example.
- the first electrode is formed of aluminum or nickel
- the photoelectric conversion body 1a is formed of an amorphous silicon semiconductor layer stacked in the order of n-type, i-type, and p-type.
- the two electrodes may be formed of indium tin oxide (ITO) containing tin or the like.
- ITO indium tin oxide
- the first electrode may be formed to a thickness of 200 to 500 nm by vapor deposition or sputtering.
- n-type, i-type, and p-type amorphous silicon may be sequentially formed on the first electrode by plasma CVD or the like. Thereafter, ITO can be formed on the photoelectric converter with a thickness of 100 to 600 nm by sputtering or the like and patterned by using a laser or the like as shown in FIG.
- the amorphous silicon semiconductor layer described above may further contain microcrystalline silicon or polycrystalline silicon.
- Photoelectric conversion element 1a Photoelectric conversion body 1b; Structure 1b ′: Projection 1b 2: Substrate 3: Back electrode 4: Semiconductor layer 5: Buffer layer 6: Window layer 9: Mounting table 10: Voltage application unit 11: Camera for observation (detection unit) 12: Computer (specific unit) 13: Display 14: Sequencer 15: Servo motor 16: Scriber up / down means 17: Scriber 19: Physical property abnormality location (abnormal location) 20, 21: Groove (second part) 22: First part
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Abstract
Description
前記物性異常箇所を機械加工で分離する分離工程とを具備する。
1a:光電変換体
1b;構造体
1b’:凸部1b
2:基板
3:裏面電極
4:半導体層
5:バッファ層
6:窓層
9:載置テーブル
10:電圧印加ユニット
11:観察用カメラ(検出ユニット)
12:コンピューター(特定ユニット)
13:ディスプレー
14:シーケンサー
15:サーボモーター
16:スクライバー上下手段
17:スクライバー
19:物性異常箇所(異常箇所)
20、21:溝(第2部位)
22:第1部位
Claims (13)
- 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体について物性異常箇所を特定する特定工程と、
前記物性異常箇所を機械加工で分離する分離工程と
を具備することを特徴とする光電変換素子の製造方法。 - 前記分離工程は、前記構造体に、前記物性異常箇所を除去された部位である第1部位を形成する工程であることを特徴とする請求項1記載の光電変換素子の製造方法。
- 前記分離工程は、前記物性異常箇所を取り囲むように、線状に前記構造体の一部を除去することによって、前記物性異常箇所が周辺部分から電気的に分断された部位である第2部位を形成する工程であることを特徴とする請求項1記載の光電変換素子の製造方法。
- 前記第1部位として、前記第1電極、前記光電変換体および前記第2電極の積層方向に沿って設けられた孔部を、前記第2電極側から前記第1電極側に向かって断面積が小さくなっているように形成することを特徴とする請求項2に記載の光電変換素子の製造方法。
- 前記第1部位として、前記第1電極、前記光電変換体および前記第2電極の積層方向に沿って設けられた孔部を、前記第1電極および前記光電変換体を貫通する第1孔部と、前記第2電極を貫通する第2孔部とによって、前記第1電極の表面側から平面視したとき、前記第1孔部が前記第2孔部の内側に位置しているように形成することを特徴とする請求項2に記載の光電変換素子の製造方法。
- モリブデンを含む前記第1電極をガラス基板の一主面上に形成し、
カルコパイライト系化合物を含む前記半導体層を形成し、
前記分離工程を、前記第1電極を前記ガラス基板の前記一主面上に残した状態で行なうことを特徴とする請求項1乃至請求項5のいずれかに記載の光電変換素子の製造方法。 - 前記分離工程後に、前記第1部位または前記第2部位を樹脂で覆う工程をさらに具備することを特徴とする請求項2または請求項3に記載の光電変換素子の製造方法。
- 前記分離工程は、前記第1部位または前記第2部位に対向する前記構造体の表面に凸部を設けるように行なうことを特徴とする請求項7に記載の光電変換素子の製造方法。
- 前記特定工程は、前記構造体に順バイアス電圧を印加したときの前記構造体のエレクトロルミネッセンスによる発光強度によって前記物性異常箇所を特定する工程であることを特徴とする請求項1乃至請求項8のいずれかに記載の光電変換素子の製造方法。
- 前記特定工程は、前記構造体に順バイアス電圧または逆バイアス電圧を印加したときの前記構造体から発せられる赤外線強度によって前記物性異常箇所を特定する工程であることを特徴とする請求項1乃至請求項8のいずれかに記載の光電変換素子の製造方法。
- 前記逆バイアス電圧を、周波数変調して印加することを特徴とする請求項10記載の光電変換素子の製造方法。
- 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体について物性異常箇所を分離する機構を有する光電変換素子の製造装置であって、
前記構造体にバイアス電圧を印加する電圧印加ユニットと、
前記構造体から発せられる電磁波の強度を検出する検出ユニットと、
前記電磁波の強度によって前記物性異常箇所を特定する特定ユニットと、
前記構造体に対して機械加工を施し、前記物性異常箇所を分離する機械加工ユニットと
を具備することを特徴とする光電変換素子の製造装置。 - 半導体層を含む光電変換体を一対の第1および第2電極間に有する構造体を備えており、前記構造体は、機械加工によって物性異常箇所が分離されてなる光電変換素子。
Priority Applications (4)
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EP10794131A EP2450960A1 (en) | 2009-06-29 | 2010-06-29 | Method for manufacturing photoelectric conversion elements, device for manufacturing photoelectric conversion elements, and photoelectric conversion element |
JP2011520923A JP5295369B2 (ja) | 2009-06-29 | 2010-06-29 | 光電変換素子の製造方法 |
US13/256,902 US20120006389A1 (en) | 2009-06-29 | 2010-06-29 | Method of Manufacturing Photoelectric Conversion Device, Apparatus for Manufacturing Photoelectric Conversion Device, and Photoelectric Conversion Device |
CN2010800092446A CN102334193A (zh) | 2009-06-29 | 2010-06-29 | 光电转换元件的制造方法、光电转换元件的制造装置及光电转换元件 |
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US (1) | US20120006389A1 (ja) |
EP (1) | EP2450960A1 (ja) |
JP (1) | JP5295369B2 (ja) |
CN (1) | CN102334193A (ja) |
WO (1) | WO2011001962A1 (ja) |
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Also Published As
Publication number | Publication date |
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JPWO2011001962A1 (ja) | 2012-12-13 |
CN102334193A (zh) | 2012-01-25 |
EP2450960A1 (en) | 2012-05-09 |
JP5295369B2 (ja) | 2013-09-18 |
US20120006389A1 (en) | 2012-01-12 |
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