JPWO2009110229A1 - 炭化珪素半導体装置およびその製造方法 - Google Patents
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 149
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 149
- 239000004065 semiconductor Substances 0.000 title claims description 41
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 239000010410 layer Substances 0.000 claims abstract description 86
- 239000000758 substrate Substances 0.000 claims abstract description 36
- 239000002344 surface layer Substances 0.000 claims abstract description 18
- 239000012535 impurity Substances 0.000 claims description 33
- 150000002500 ions Chemical class 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 9
- 230000001747 exhibiting effect Effects 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract description 8
- 238000002513 implantation Methods 0.000 description 25
- 238000010586 diagram Methods 0.000 description 17
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000010936 titanium Substances 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 229910052723 transition metal Inorganic materials 0.000 description 3
- 150000003624 transition metals Chemical class 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 1
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
- H01L21/0455—Making n or p doped regions or layers, e.g. using diffusion
- H01L21/046—Making n or p doped regions or layers, e.g. using diffusion using ion implantation
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Abstract
Description
このようなドレイン電流のオーバーシュートは、特許文献1のようにチャネル領域にp層を設けてオン時とオフ時のゲート・ドレイン間容量の差を大きくしたMOSFETに限らず、チャネル領域にp層を設けない一般的なMOSFETにも発生してMOSFETが破壊することがある。
図1は、この発明を実施するための実施の形態1における、炭化珪素半導体装置である炭化珪素MOSFETを示す断面模式図である。本実施の形態においては、第1導電型をn型、第2導電型をp型として説明する。
オン状態の場合には、ソース電極70とドレイン電極80との間には高電圧はかからない。また、本実施の形態によるベース領域30下方に隣接する領域が半絶縁領域90であるので、ベース領域30と炭化珪素基板10の間に容量が発生する。
次に、図3に示すように、炭化珪素ドリフト層20の表面に多結晶珪素で構成される第1注入マスク100を形成し、表面に第1注入マスク100が形成された炭化珪素ドリフト層21に不純物である遷移金属のVをイオン注入する。このとき、Vのイオン注入の深さは炭化珪素ドリフト層21の厚さ程度とする。また、イオン注入されたVの不純物濃度は、4×1015cm―3程度とする。第1炭化珪素ドリフト層21のうちVがイオン注入された領域が半絶縁領域90となる。
つづいて、図4に示すように第1注入マスク100を除去する。
次に、ゲート絶縁膜51の上に、導電性を有する多結晶珪素膜を減圧CVD法により形成し、これをパターニングすることによりゲート電極60を形成する。その後、図9に示すように、ゲート絶縁膜51およびゲート電極60の上に二酸化珪素で構成される層間絶縁膜52を形成し、ゲート絶縁膜51およびに層間絶縁膜52に開口する。
さらに、ベース領域30を形成するために注入する不純物は、p型不純物であればよく、Alイオン以外に硼素(B)イオンなどであってもよい。ソース領域を形成するために注入する不純物は、p型不純物であればよく、Nイオン以外の燐(P)イオンなどであってもよい。また、注入不純物濃度は例示でありここに示した濃度に限るものではない。
図11は、この発明を実施するための実施の形態2における、炭化珪素半導体装置である炭化珪素MOSFETを示す断面模式図である。本実施の形態においても、第1導電型をn型、第2導電型をp型として説明する。
次に、図13に示すように、第5注入マスク111を形成後、基板を180°回転させて30°の斜め方向からVイオンを斜め注入する。第5注入マスク111を除去後は、実施の形態1の図4から図10に示した工程と同様である。
なお、ゲート電極60の縦横の長さがほぼ同じ場合には、図16に示すように基板を90°ずつ回転させた4方向からVイオンを注入してもよい。この場合、オン電流が流れる炭化珪素ドリフト層内の経路を十分に確保できるため、よりオン電流を大きくすることができる。
また、本実施の形態においては、半絶縁領域90が炭化珪素基板10にまで達するように形成した場合を示したが、半絶縁領域90は図17に示すように炭化珪素基板10にまで達しないで、炭化珪素ドリフト層20内に全て形成されていても同様の効果を奏する。
Claims (5)
- 第1導電型の炭化珪素基板と、
前記炭化珪素基板の主面上に設けられた第1導電型の炭化珪素ドリフト層と、
前記炭化珪素ドリフト層の表層部に離間して設けられ第2導電型を示す一対のベース領域と、
一対の前記ベース領域の表層部の内部に設けられ第1導電型を示す一対のソース領域と、
前記炭化珪素基板と一対の前記ベース領域との間に設けられた一対の半絶縁領域と、
前記炭化珪素ドリフト層の表面上にゲート絶縁膜を介して設けられたゲート電極と、
前記ソース領域および前記ベース領域に接して設けられたソース電極と、
前記炭化珪素基板の主面の反対側の面上に設けられたドレイン電極と
を備えたことを特徴とする炭化珪素半導体装置。 - 一対の半絶縁領域の間隔は、上端より下端で大きいことを特徴とする請求項1に記載の炭化珪素半導体装置。
- 一対の半絶縁領域の上端の間隔は、一対のベース領域の間隔より大きく一対のソース領域の間隔より小さいことを特徴とする請求項1または2に記載の炭化珪素半導体装置。
- 炭化珪素基板上に第1導電型の第1炭化珪素ドリフト層を形成する工程と、
前記第1炭化珪素ドリフト層の表層の一部に所定の間隔をおいて半絶縁性となる不純物イオンを注入する工程と、
前記第1炭化珪素ドリフト層上に第2炭化珪素ドリフト層を形成する工程と、
前記第2炭化珪素ドリフト層の表層の一部に第2導電型の不純物をイオン注入する工程と、
前記第2炭化珪素ドリフト層の表層の一部に第1導電型の不純物をイオン注入する工程とを備えたことを特徴とする炭化珪素半導体装置の製造方法。 - 半絶縁性となる不純物イオンを注入する工程は、前記不純物イオンを炭化珪素基板表面に対して傾斜して注入することを特徴とする請求項4に記載の炭化珪素半導体装置の製造方法。
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JP2012104568A (ja) | 2010-11-08 | 2012-05-31 | Sumitomo Electric Ind Ltd | 半導体装置およびその製造方法 |
JP2012169384A (ja) * | 2011-02-11 | 2012-09-06 | Denso Corp | 炭化珪素半導体装置およびその製造方法 |
JP5699055B2 (ja) * | 2011-08-16 | 2015-04-08 | 新電元工業株式会社 | 炭化珪素半導体装置 |
US9257283B2 (en) * | 2012-08-06 | 2016-02-09 | General Electric Company | Device having reduced bias temperature instability (BTI) |
SE1430022A1 (sv) * | 2013-07-01 | 2015-01-02 | Billiga semi-isolerande SiC-substrat | |
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JP6696499B2 (ja) * | 2015-11-24 | 2020-05-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
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DE102019120692A1 (de) * | 2019-07-31 | 2021-02-04 | Infineon Technologies Ag | Leistungshalbleitervorrichtung und Verfahren |
EP4231358B1 (en) * | 2022-02-17 | 2024-05-22 | Hitachi Energy Ltd | Transistor, power electronic switching device and method for manufacturing a transistor |
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JP2000164855A (ja) * | 1998-11-30 | 2000-06-16 | Nippon Telegr & Teleph Corp <Ntt> | 絶縁ゲート型半導体装置及びその製法 |
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US20110012133A1 (en) | 2011-01-20 |
DE112009000535T5 (de) | 2011-01-20 |
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US8350270B2 (en) | 2013-01-08 |
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