JP6505263B2 - 炭化珪素半導体装置およびその製造方法 - Google Patents
炭化珪素半導体装置およびその製造方法 Download PDFInfo
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- JP6505263B2 JP6505263B2 JP2017566527A JP2017566527A JP6505263B2 JP 6505263 B2 JP6505263 B2 JP 6505263B2 JP 2017566527 A JP2017566527 A JP 2017566527A JP 2017566527 A JP2017566527 A JP 2017566527A JP 6505263 B2 JP6505263 B2 JP 6505263B2
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- silicon carbide
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- insulating film
- electrode
- semiconductor device
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 126
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 126
- 239000004065 semiconductor Substances 0.000 title claims description 43
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000012535 impurity Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 19
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
- 238000010438 heat treatment Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- 239000000460 chlorine Substances 0.000 claims description 6
- 239000011669 selenium Substances 0.000 claims description 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims description 5
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 5
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 5
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 5
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- 229910052801 chlorine Inorganic materials 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 239000011630 iodine Substances 0.000 claims description 5
- 229910052740 iodine Inorganic materials 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011593 sulfur Substances 0.000 claims description 5
- 229910052717 sulfur Inorganic materials 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 150000002500 ions Chemical class 0.000 claims description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 3
- 229910052785 arsenic Inorganic materials 0.000 claims description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 3
- 239000002019 doping agent Substances 0.000 claims description 3
- 229910052698 phosphorus Inorganic materials 0.000 claims description 3
- 239000011574 phosphorus Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 25
- 230000005684 electric field Effects 0.000 description 14
- 230000015556 catabolic process Effects 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
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Description
以下、図面に基づいて本発明の実施の形態について説明する。なお、以下の図面において同一または相当する部分には同一の参照番号を付しその説明は繰り返さない。
ΔΦS=NS 2/2ε0εSND
と表される。ここで、ε0は真空誘電率、εSはゲート電極7の比誘電率、NDはゲート電極7における異元素のドーピング密度である。
Claims (10)
- 炭化珪素層と、
前記炭化珪素層内に設けられた第1導電型のドリフト層と、
前記炭化珪素層の上層部に選択的に設けられ、前記第1導電型とは異なる第2導電型の複数のウェル領域と、
前記複数のウェル領域内に設けられた前記第1導電型のソース領域と、
前記複数のウェル領域に挟まれた前記ドリフト層の部分であり、前記炭化珪素層の上面に達するJFET領域と、
前記ソース領域と前記JFET領域に挟まれたウェル領域内に設けられるチャネル領域と、
前記炭化珪素層上に設けられ、少なくとも前記JFET領域を覆う絶縁膜と、
前記絶縁膜を介して前記JFET領域上に設けられた電極と、を備え、
前記絶縁膜および前記電極は、前記絶縁膜および前記電極を構成する元素とは異なる異元素を含む領域を含み、
前記異元素を含む領域は、前記JFET領域の上方に設けられており、チャネル領域の上方には設けられていない
炭化珪素半導体装置。 - 前記異元素は、前記電極を構成する元素のいずれよりも電気陰性度が高い
請求項1に記載の炭化珪素半導体装置。 - 前記電極は、珪素から構成され、不純物ドーパントとして燐、砒素、アンチモン、硼素、ガリウムのいずれかを含み、
前記異元素は、炭素、窒素、フッ素、硫黄、塩素、セレン、臭素、ヨウ素のいずれかである
請求項1または請求項2に記載の炭化珪素半導体装置。 - 前記異元素の面密度は、1×1013cm−2以上、1×1015cm−2以下である
請求項1から請求項3のいずれか一項に記載の炭化珪素半導体装置。 - 前記異元素の濃度ピークは、前記絶縁膜と前記電極との境界から上下に100nm以下の範囲内に位置している
請求項1から請求項4のいずれか一項に記載の炭化珪素半導体装置。 - 炭化珪素層に第1導電型のドリフト層を形成する工程と、
前記炭化珪素層の上層部に、前記第1導電型とは異なる第2導電型の複数のウェル領域を選択的に形成する工程と、
前記複数のウェル領域に挟まれた前記ドリフト層の部分であるJFET領域を覆うように、前記炭化珪素層上に絶縁膜を形成する工程と、
前記絶縁膜上に、前記JFET領域を覆うように電極を形成する工程と、
前記電極に対し、前記絶縁膜および前記電極を構成する元素とは異なる異元素をイオン注入する工程と、を備え、
前記異元素は、炭素、窒素、フッ素、硫黄、塩素、セレン、臭素、ヨウ素のいずれかである
炭化珪素半導体装置の製造方法。 - 炭化珪素層に第1導電型のドリフト層を形成する工程と、
前記炭化珪素層の上層部に、前記第1導電型とは異なる第2導電型の複数のウェル領域を選択的に形成する工程と、
前記複数のウェル領域内に前記第1導電型のソース領域を選択的に形成する工程と、
前記複数のウェル領域に挟まれた前記ドリフト層の部分であるJFET領域を覆うように、前記炭化珪素層上に絶縁膜を形成する工程と、
前記絶縁膜上に、前記JFET領域を覆うように電極を形成する工程と、
前記電極に対し、前記絶縁膜および前記電極を構成する元素とは異なる異元素をイオン注入する工程と、を備え、
前記異元素は、前記電極における前記JFET領域の上方にイオン注入され、チャネル領域の上方にはイオン注入されない
炭化珪素半導体装置の製造方法。 - 前記異元素をイオン注入する工程の後に、熱処理により前記異元素を拡散させる工程をさらに備える
請求項7に記載の炭化珪素半導体装置の製造方法。 - 前記異元素は、炭素、窒素、フッ素、硫黄、塩素、セレン、臭素、ヨウ素のいずれかである
請求項7または請求項8に記載の炭化珪素半導体装置の製造方法。 - 前記異元素をイオン注入する工程において、前記電極にイオン注入される前記異元素のドーズ量は、1×1013cm−2以上、1×1015cm−2以下である
請求項6から請求項9のいずれか一項に記載の炭化珪素半導体装置の製造方法。
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