JPH09511103A - シリコンカーバイドにおける半導体デバイス - Google Patents
シリコンカーバイドにおける半導体デバイスInfo
- Publication number
- JPH09511103A JPH09511103A JP8522200A JP52220096A JPH09511103A JP H09511103 A JPH09511103 A JP H09511103A JP 8522200 A JP8522200 A JP 8522200A JP 52220096 A JP52220096 A JP 52220096A JP H09511103 A JPH09511103 A JP H09511103A
- Authority
- JP
- Japan
- Prior art keywords
- junction
- wafer
- silicon carbide
- region
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 80
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 73
- 238000002513 implantation Methods 0.000 claims abstract description 37
- 238000002161 passivation Methods 0.000 claims abstract description 19
- 238000005468 ion implantation Methods 0.000 claims abstract description 9
- 150000002500 ions Chemical class 0.000 claims description 13
- 230000005855 radiation Effects 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 11
- 239000013078 crystal Substances 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 11
- 239000010703 silicon Substances 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 6
- 230000001678 irradiating effect Effects 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 14
- 238000002347 injection Methods 0.000 abstract description 8
- 239000007924 injection Substances 0.000 abstract description 8
- 239000010410 layer Substances 0.000 description 62
- 239000000463 material Substances 0.000 description 26
- 235000012431 wafers Nutrition 0.000 description 22
- 230000005684 electric field Effects 0.000 description 16
- 230000015556 catabolic process Effects 0.000 description 8
- 239000007943 implant Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- -1 argon ions Chemical class 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
- H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/931—Silicon carbide semiconductor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Thyristors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.ドープされたシリコンカーバイドのウェーハ(W)において高抵抗領域( 5)を得るための方法であって、 領域(5)の電気導電率特性が導電性から抵抗性に変化するように、照射され た領域内のシリコンカーバイドの結晶構造を変える、使用されたイオンエネルギ によって与えられた、シリコンウェーハ(W)内の範囲の深さをカバーする抵抗 性領域(5)を得るための注入方法で、領域(5)をエネルギーの変化するイオ ンで照射することを特徴とする方法。 2.ウェーハ(5)を照射するイオンが、好ましくはプロトンから成ることを 特徴とする請求項1記載の方法。 3.ウェーハ(5)を照射するイオンが、好ましくはHe2+またはD+から成 ることを特徴とする請求項1記載の方法。 4.所望の層の厚みの抵抗性領域(5)を得るために、工程ごとにイオンエネ ルギを変える複数の工程で注入を実行することを特徴とする請求項1記載の方法 。 5.注入中の放射線エネルギーが変化しないイオン源によりウェーハ(W)を 照射し、ウェーハに供給されるエネルギーを変える装置によりウェーハ(W)に 対する変化した放射エネルギーを得ることを特徴とする請求項1記載の方法。 6.放射エネルギーを変えるよう放射線源とウェーハ(W)との間に、厚みが 変化するプレート状をしたマスク(11)を挿入し、ウェーハ(W)を通る中心 軸線を中心としてマスクまたは放射線源を回転することを特徴とする請求項5記 載の方法。 7.p−n接合部(3)の領域(7)がマスクされたp−n接合部(3)を含 むシリコンカーバイドウェーハ(W)に対しイオン注入を行い、よってマスクさ れた領域を囲む層(5)を半絶縁特性を有するように再構成し、パッシベーショ ン層を形成することを特徴とする請求項1記載の方法。 8.p−n接合部(3)の領域(7)がマスクされたp−n接合部(3)を含 むシリコンカーバイドウェーハ(W)に対しイオン注入を行い、よってマスクさ れた領域を囲む層(5)を半絶縁特性を有するように再構成し、よって半絶縁 (5)がp−n接合部(3)の領域の境界を定めることを特徴とする請求項1記 載の方法。 9.p−n接合部(3)の領域(7)がマスクされたp−n接合部(3)を含 むシリコンカーバイドウェーハ(W)に対しイオン注入を行い、よってマスクさ れた領域を囲む層(5)を半絶縁特性を有するように再構成し、よって半絶縁層 (5)がp−n接合部(3)のエッジ(E)のエッジターミネーションを構成す ることを特徴とする請求項1記載の方法。 10.p−n接合部(3)のエッジターミネーションを正のエッジ角度で実行す ることを特徴とする請求項9記載の方法。 11.ウェーハ(W)を通る垂直軸線を中心としてウェーハ(W)を回転するか 、または放射線源を回転することによりウェーハ(W)に注入を実行することを 特徴とする、先の請求項のいずれかに記載の方法。 12.請求項1記載の方法によって製造された、少なくとも1つのp−n接合部 (3)を含むシリコンカーバイドにおける半導体デバイスにおいて、p−n接合 部(3)のエッジ(E)に隣接する領域(5)をイオン注入により高抵抗シリコ ンカーバイド構造に再構成したことを特徴とする半導体デバイス。 13.プレーナ状シリコンカーバイドウェーハ(W)にて、注入により半導体デ バイスを製造したことを特徴とする請求項12記載の半導体デバイス。 14.p−n接合部(3)のエッジ(E)を正のエッジ角度としたことを特徴と する請求項12記載の半導体デバイス。 15.p−n接合部(3)に隣接する再構成された高抵抗層(5)がp−n接合 部(3)の欠損層の限界を構成する高さよりも深い深さまで延びていることを特 徴とする請求項12記載の半導体デバイス。 16.ダイオード、MOSFETトランジスタ、バイポーラトランジスタ、サイ リスタ、IGBTトランジスタまたは別のBiMOSのいずれかにp−n接合部 (3)が設けられていることを特徴とする請求項12記載の半導体デバイス。 17.請求項1記載の方法により、少なくともいくつかのp−またはn−ドープ された層または領域をパッシベートする、シリコンカーバイドにおける半導体デ バイス。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE9500146-7 | 1995-01-18 | ||
SE9500146A SE9500146D0 (sv) | 1995-01-18 | 1995-01-18 | Halvledarkomponent i kiselkarbid |
PCT/SE1996/000034 WO1996022610A1 (en) | 1995-01-18 | 1996-01-17 | Semiconductor device in silicon carbide |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH09511103A true JPH09511103A (ja) | 1997-11-04 |
JP4143120B2 JP4143120B2 (ja) | 2008-09-03 |
Family
ID=20396853
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52220096A Expired - Lifetime JP4143120B2 (ja) | 1995-01-18 | 1996-01-17 | シリコンカーバイドにおける半導体デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US5914499A (ja) |
EP (1) | EP0750789B1 (ja) |
JP (1) | JP4143120B2 (ja) |
DE (1) | DE69601981T2 (ja) |
SE (1) | SE9500146D0 (ja) |
WO (1) | WO1996022610A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164525A (ja) * | 1998-11-30 | 2000-06-16 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
WO2009110229A1 (ja) * | 2008-03-07 | 2009-09-11 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP2017117939A (ja) * | 2015-12-24 | 2017-06-29 | 住重試験検査株式会社 | 半導体装置および半導体装置の製造方法 |
JP2018521503A (ja) * | 2015-06-09 | 2018-08-02 | アーベーベー・シュバイツ・アーゲー | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
JP2020205309A (ja) * | 2019-06-14 | 2020-12-24 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
SE512259C2 (sv) * | 1998-03-23 | 2000-02-21 | Abb Research Ltd | Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning |
US6884644B1 (en) * | 1998-09-16 | 2005-04-26 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
US6803243B2 (en) * | 2001-03-15 | 2004-10-12 | Cree, Inc. | Low temperature formation of backside ohmic contacts for vertical devices |
JP3955396B2 (ja) | 1998-09-17 | 2007-08-08 | 株式会社ルネサステクノロジ | 半導体サージ吸収素子 |
US6218680B1 (en) | 1999-05-18 | 2001-04-17 | Cree, Inc. | Semi-insulating silicon carbide without vanadium domination |
US6396080B2 (en) | 1999-05-18 | 2002-05-28 | Cree, Inc | Semi-insulating silicon carbide without vanadium domination |
US6373076B1 (en) * | 1999-12-07 | 2002-04-16 | Philips Electronics North America Corporation | Passivated silicon carbide devices with low leakage current and method of fabricating |
US6924215B2 (en) * | 2002-05-29 | 2005-08-02 | Taiwan Semiconductor Manufacturing Co., Ltd | Method of monitoring high tilt angle of medium current implant |
US7157730B2 (en) * | 2002-12-20 | 2007-01-02 | Finisar Corporation | Angled wafer rotating ion implantation |
CN1802755B (zh) | 2003-05-09 | 2012-05-16 | 克里公司 | 通过离子注入进行隔离的led制造方法 |
US20050194584A1 (en) * | 2003-11-12 | 2005-09-08 | Slater David B.Jr. | LED fabrication via ion implant isolation |
US7592634B2 (en) * | 2004-05-06 | 2009-09-22 | Cree, Inc. | LED fabrication via ion implant isolation |
CN101405871A (zh) * | 2004-11-24 | 2009-04-08 | 美高森美公司 | 用于宽禁带功率器件的结终端结构 |
US7622358B2 (en) * | 2005-09-30 | 2009-11-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device with semi-insulating substrate portions and method for forming the same |
JP5044117B2 (ja) * | 2005-12-14 | 2012-10-10 | 関西電力株式会社 | 炭化珪素バイポーラ型半導体装置 |
US8106487B2 (en) | 2008-12-23 | 2012-01-31 | Pratt & Whitney Rocketdyne, Inc. | Semiconductor device having an inorganic coating layer applied over a junction termination extension |
CN102570294B (zh) * | 2012-01-12 | 2013-07-10 | 北京工业大学 | 一种真空解理大功率半导体激光器腔面氮钝化方法 |
JP6107430B2 (ja) * | 2012-06-08 | 2017-04-05 | 豊田合成株式会社 | 半導体装置 |
WO2014172697A1 (en) | 2013-04-19 | 2014-10-23 | Lightspin Technologies, Inc. | Integrated avalanche photodiode arrays |
US9768211B2 (en) | 2015-05-06 | 2017-09-19 | LightSpin Technologies Inc. | Integrated avalanche photodiode arrays |
DE102015115173A1 (de) * | 2015-09-09 | 2017-03-09 | Infineon Technologies Austria Ag | Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements |
US10541300B2 (en) | 2016-05-26 | 2020-01-21 | General Electric Company | Semiconductor device and method of making thereof |
US10529884B2 (en) | 2017-11-09 | 2020-01-07 | LightSpin Technologies Inc. | Virtual negative bevel and methods of isolating adjacent devices |
US10608079B2 (en) | 2018-02-06 | 2020-03-31 | General Electric Company | High energy ion implantation for junction isolation in silicon carbide devices |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL131898C (ja) * | 1965-03-26 | |||
US3458779A (en) * | 1967-11-24 | 1969-07-29 | Gen Electric | Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region |
US5270244A (en) * | 1993-01-25 | 1993-12-14 | North Carolina State University At Raleigh | Method for forming an oxide-filled trench in silicon carbide |
US5399883A (en) * | 1994-05-04 | 1995-03-21 | North Carolina State University At Raleigh | High voltage silicon carbide MESFETs and methods of fabricating same |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
WO1995032524A1 (en) * | 1994-05-24 | 1995-11-30 | Abb Research Ltd. | Semiconductor device in silicon carbide with passivated surface |
US5650654A (en) * | 1994-12-30 | 1997-07-22 | International Business Machines Corporation | MOSFET device having controlled parasitic isolation threshold voltage |
-
1995
- 1995-01-18 SE SE9500146A patent/SE9500146D0/xx unknown
-
1996
- 1996-01-17 EP EP96901171A patent/EP0750789B1/en not_active Expired - Lifetime
- 1996-01-17 DE DE69601981T patent/DE69601981T2/de not_active Expired - Fee Related
- 1996-01-17 JP JP52220096A patent/JP4143120B2/ja not_active Expired - Lifetime
- 1996-01-17 WO PCT/SE1996/000034 patent/WO1996022610A1/en active IP Right Grant
- 1996-01-17 US US08/716,252 patent/US5914499A/en not_active Expired - Lifetime
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000164525A (ja) * | 1998-11-30 | 2000-06-16 | Denso Corp | 炭化珪素半導体装置及びその製造方法 |
WO2009110229A1 (ja) * | 2008-03-07 | 2009-09-11 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
DE112009000535T5 (de) | 2008-03-07 | 2011-01-20 | Mitsubishi Electric Corp. | Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung |
JPWO2009110229A1 (ja) * | 2008-03-07 | 2011-07-14 | 三菱電機株式会社 | 炭化珪素半導体装置およびその製造方法 |
US8350270B2 (en) | 2008-03-07 | 2013-01-08 | Mitsubishi Electric Corporation | Silicon carbide semiconductor device and method for manufacturing the same |
JP5182359B2 (ja) * | 2008-03-07 | 2013-04-17 | 三菱電機株式会社 | 炭化珪素半導体装置 |
JP2018521503A (ja) * | 2015-06-09 | 2018-08-02 | アーベーベー・シュバイツ・アーゲー | 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 |
JP2017117939A (ja) * | 2015-12-24 | 2017-06-29 | 住重試験検査株式会社 | 半導体装置および半導体装置の製造方法 |
JP2020205309A (ja) * | 2019-06-14 | 2020-12-24 | 日産自動車株式会社 | 半導体装置及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP0750789B1 (en) | 1999-04-07 |
EP0750789A1 (en) | 1997-01-02 |
US5914499A (en) | 1999-06-22 |
DE69601981D1 (de) | 1999-05-12 |
WO1996022610A1 (en) | 1996-07-25 |
SE9500146D0 (sv) | 1995-01-18 |
DE69601981T2 (de) | 1999-12-02 |
JP4143120B2 (ja) | 2008-09-03 |
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