SE9500146D0 - Halvledarkomponent i kiselkarbid - Google Patents

Halvledarkomponent i kiselkarbid

Info

Publication number
SE9500146D0
SE9500146D0 SE9500146A SE9500146A SE9500146D0 SE 9500146 D0 SE9500146 D0 SE 9500146D0 SE 9500146 A SE9500146 A SE 9500146A SE 9500146 A SE9500146 A SE 9500146A SE 9500146 D0 SE9500146 D0 SE 9500146D0
Authority
SE
Sweden
Prior art keywords
silicon carbide
pct
junction
conductive
implantation method
Prior art date
Application number
SE9500146A
Other languages
English (en)
Swedish (sv)
Inventor
Lennart Ramberg
Dag Sigurd
Willy Hermansson
Original Assignee
Abb Research Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Abb Research Ltd filed Critical Abb Research Ltd
Priority to SE9500146A priority Critical patent/SE9500146D0/xx
Publication of SE9500146D0 publication Critical patent/SE9500146D0/xx
Priority to US08/716,252 priority patent/US5914499A/en
Priority to JP52220096A priority patent/JP4143120B2/ja
Priority to DE69601981T priority patent/DE69601981T2/de
Priority to PCT/SE1996/000034 priority patent/WO1996022610A1/en
Priority to EP96901171A priority patent/EP0750789B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/7602—Making of isolation regions between components between components manufactured in an active substrate comprising SiC compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66053—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide
    • H01L29/6606—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
SE9500146A 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid SE9500146D0 (sv)

Priority Applications (6)

Application Number Priority Date Filing Date Title
SE9500146A SE9500146D0 (sv) 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid
US08/716,252 US5914499A (en) 1995-01-18 1996-01-17 High voltage silicon carbide semiconductor device with bended edge
JP52220096A JP4143120B2 (ja) 1995-01-18 1996-01-17 シリコンカーバイドにおける半導体デバイス
DE69601981T DE69601981T2 (de) 1995-01-18 1996-01-17 Herstellungsverfahren einer halbleiteranordnung aus siliziumkarbid
PCT/SE1996/000034 WO1996022610A1 (en) 1995-01-18 1996-01-17 Semiconductor device in silicon carbide
EP96901171A EP0750789B1 (en) 1995-01-18 1996-01-17 Method for obtaining a semiconductor device in silicon carbide

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SE9500146A SE9500146D0 (sv) 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid

Publications (1)

Publication Number Publication Date
SE9500146D0 true SE9500146D0 (sv) 1995-01-18

Family

ID=20396853

Family Applications (1)

Application Number Title Priority Date Filing Date
SE9500146A SE9500146D0 (sv) 1995-01-18 1995-01-18 Halvledarkomponent i kiselkarbid

Country Status (6)

Country Link
US (1) US5914499A (ja)
EP (1) EP0750789B1 (ja)
JP (1) JP4143120B2 (ja)
DE (1) DE69601981T2 (ja)
SE (1) SE9500146D0 (ja)
WO (1) WO1996022610A1 (ja)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE512259C2 (sv) * 1998-03-23 2000-02-21 Abb Research Ltd Halvledaranordning bestående av dopad kiselkarbid vilken innefattar en pn-övergång som uppvisar åtminstone en ihålig defekt och förfarande för dess framställning
US6884644B1 (en) * 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
US6803243B2 (en) * 2001-03-15 2004-10-12 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
JP3955396B2 (ja) 1998-09-17 2007-08-08 株式会社ルネサステクノロジ 半導体サージ吸収素子
JP4320810B2 (ja) * 1998-11-30 2009-08-26 株式会社デンソー 炭化珪素半導体装置の製造方法
US6396080B2 (en) 1999-05-18 2002-05-28 Cree, Inc Semi-insulating silicon carbide without vanadium domination
US6218680B1 (en) 1999-05-18 2001-04-17 Cree, Inc. Semi-insulating silicon carbide without vanadium domination
US6373076B1 (en) * 1999-12-07 2002-04-16 Philips Electronics North America Corporation Passivated silicon carbide devices with low leakage current and method of fabricating
US6924215B2 (en) * 2002-05-29 2005-08-02 Taiwan Semiconductor Manufacturing Co., Ltd Method of monitoring high tilt angle of medium current implant
US7157730B2 (en) * 2002-12-20 2007-01-02 Finisar Corporation Angled wafer rotating ion implantation
EP1623467B1 (en) 2003-05-09 2016-12-07 Cree, Inc. LED fabrication via ion implant isolation
US20050194584A1 (en) * 2003-11-12 2005-09-08 Slater David B.Jr. LED fabrication via ion implant isolation
US7592634B2 (en) * 2004-05-06 2009-09-22 Cree, Inc. LED fabrication via ion implant isolation
WO2006058216A2 (en) * 2004-11-24 2006-06-01 Microsemi Corporation Junction terminations structures for wide-bandgap power devices
US7622358B2 (en) * 2005-09-30 2009-11-24 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with semi-insulating substrate portions and method for forming the same
JP5044117B2 (ja) * 2005-12-14 2012-10-10 関西電力株式会社 炭化珪素バイポーラ型半導体装置
DE112009000535B4 (de) * 2008-03-07 2013-08-01 Mitsubishi Electric Corp. Siliziumkarbid-Halbleitervorrichtung und Verfahren zu deren Herstellung
US8106487B2 (en) 2008-12-23 2012-01-31 Pratt & Whitney Rocketdyne, Inc. Semiconductor device having an inorganic coating layer applied over a junction termination extension
CN102570294B (zh) * 2012-01-12 2013-07-10 北京工业大学 一种真空解理大功率半导体激光器腔面氮钝化方法
JP6107430B2 (ja) * 2012-06-08 2017-04-05 豊田合成株式会社 半導体装置
EP2987186B1 (en) 2013-04-19 2020-07-01 Lightspin Technologies, Inc. Integrated avalanche photodiode arrays
US9768211B2 (en) 2015-05-06 2017-09-19 LightSpin Technologies Inc. Integrated avalanche photodiode arrays
WO2016198388A1 (en) 2015-06-09 2016-12-15 Abb Schweiz Ag Method for manufacturing an edge termination for a silicon carbide power semiconductor device
DE102015115173A1 (de) * 2015-09-09 2017-03-09 Infineon Technologies Austria Ag Ein Halbleiterwafer, eine Implantationsvorrichtung zum Implantieren von Protonen und ein Verfahren zum Bilden eines Halbleiterbauelements
JP6557134B2 (ja) * 2015-12-24 2019-08-07 住重アテックス株式会社 半導体装置および半導体装置の製造方法
US10541300B2 (en) 2016-05-26 2020-01-21 General Electric Company Semiconductor device and method of making thereof
US10529884B2 (en) 2017-11-09 2020-01-07 LightSpin Technologies Inc. Virtual negative bevel and methods of isolating adjacent devices
US10608079B2 (en) 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
JP7312616B2 (ja) * 2019-06-14 2023-07-21 日産自動車株式会社 半導体装置及びその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL131898C (ja) * 1965-03-26
US3458779A (en) * 1967-11-24 1969-07-29 Gen Electric Sic p-n junction electroluminescent diode with a donor concentration diminishing from the junction to one surface and an acceptor concentration increasing in the same region
US5270244A (en) * 1993-01-25 1993-12-14 North Carolina State University At Raleigh Method for forming an oxide-filled trench in silicon carbide
US5399883A (en) * 1994-05-04 1995-03-21 North Carolina State University At Raleigh High voltage silicon carbide MESFETs and methods of fabricating same
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
WO1995032524A1 (en) * 1994-05-24 1995-11-30 Abb Research Ltd. Semiconductor device in silicon carbide with passivated surface
US5650654A (en) * 1994-12-30 1997-07-22 International Business Machines Corporation MOSFET device having controlled parasitic isolation threshold voltage

Also Published As

Publication number Publication date
JPH09511103A (ja) 1997-11-04
EP0750789B1 (en) 1999-04-07
US5914499A (en) 1999-06-22
WO1996022610A1 (en) 1996-07-25
DE69601981D1 (de) 1999-05-12
DE69601981T2 (de) 1999-12-02
EP0750789A1 (en) 1997-01-02
JP4143120B2 (ja) 2008-09-03

Similar Documents

Publication Publication Date Title
SE9500146D0 (sv) Halvledarkomponent i kiselkarbid
US5323059A (en) Vertical current flow semiconductor device utilizing wafer bonding
US4269636A (en) Method of fabricating self-aligned bipolar transistor process and device utilizing etching and self-aligned masking
US4103415A (en) Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
US5382535A (en) Method of fabricating performance lateral double-diffused MOS transistor
US6083814A (en) Method for producing a pn-junction for a semiconductor device of SiC
KR970018527A (ko) 반도체 장치 및 그 제조 방법
KR970077625A (ko) 반도체 장치 제조 방법
WO1998002924A3 (en) Sic semiconductor device comprising a pn junction with a voltage absorbing edge
WO1998002923A3 (en) Depletion region stopper for pn junction in silicon carbide
EP1434260B1 (en) Method for forming a doped region in a semiconductor substrate
US4551909A (en) Method of fabricating junction field effect transistors
JPH05198543A (ja) 半導体基板の製造方法および半導体基板
US6727128B2 (en) Method of preparing polysilicon FET built on silicon carbide diode substrate
US4169270A (en) Insulated-gate field-effect transistor with self-aligned contact hole to source or drain
EP0689238A1 (en) MOS-technology power device manufacturing process
CA1269764A (en) Method of fabricating a junction field effect transistor
US4535529A (en) Method of making semiconductor devices by forming an impurity adjusted epitaxial layer over out diffused buried layers having different lateral conductivity types
WO2001065594A3 (en) A method of producing a schottky varicap diode
GB2237930A (en) A semiconductor device and method of manufacturing a semiconductor device
JPH0193159A (ja) ＢｉＣＭＯＳ素子の製造方法
US5512508A (en) Method and apparatus for improvement of interconnection capacitance
JP3454076B2 (ja) 炭化けい素半導体装置
US6306717B1 (en) Method of manufacturing an avalanche diode with an adjustable threshold
JPS6394667A (ja) 半導体集積回路