JP2018521503A - 炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 - Google Patents
炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法 Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 88
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 85
- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000000034 method Methods 0.000 title claims description 23
- 230000009467 reduction Effects 0.000 claims abstract description 179
- 150000002500 ions Chemical class 0.000 claims abstract description 53
- 238000002513 implantation Methods 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000000137 annealing Methods 0.000 claims abstract description 11
- 239000002184 metal Substances 0.000 claims description 42
- 239000001257 hydrogen Substances 0.000 claims description 14
- 229910052739 hydrogen Inorganic materials 0.000 claims description 14
- 229910052734 helium Inorganic materials 0.000 claims description 11
- 239000001307 helium Substances 0.000 claims description 11
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 11
- 230000007423 decrease Effects 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 20
- 230000005684 electric field Effects 0.000 description 19
- 239000007943 implant Substances 0.000 description 18
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 9
- 230000007547 defect Effects 0.000 description 5
- 238000002347 injection Methods 0.000 description 5
- 239000007924 injection Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- LBDSXVIYZYSRII-IGMARMGPSA-N alpha-particle Chemical compound [4He+2] LBDSXVIYZYSRII-IGMARMGPSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
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- 230000009977 dual effect Effects 0.000 description 1
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- 230000002265 prevention Effects 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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Abstract
Description
本発明は、パワーエレクトロニクスの分野に関し、より特定的には、炭化ケイ素パワー半導体デバイスのエッジ終端構造を製造する方法、このようなエッジ終端構造を有する炭化ケイ素パワー半導体デバイスを製造する方法、および炭化ケイ素パワー半導体デバイスそれ自体に関する。
本発明の目的は、製造が容易であり、終端領域におけるいかなる電界ピークも効率的に防止し、または少なくとも低下させ、それによってデバイスの絶縁破壊特性を向上させる、炭化ケイ素パワー半導体デバイスのエッジ終端部を製造する方法を提供することである。
添付の図面を参照して、以下の本文において本発明の主題をより詳細に説明する。
Claims (12)
- 炭化ケイ素パワー半導体デバイスのエッジ終端構造を製造する方法であって、前記炭化ケイ素パワー半導体デバイスは、第1の主要側(14)と前記第1の主要側(14)とは反対側の第2の主要側(16)との間に中央領域(10)とエッジ領域(12)とを有し、前記方法は、製造ステップを実行し、前記製造ステップは、
a)前記第2の主要側(16)を一方の主要側として有するnドープ炭化ケイ素基板(1)を設け、
b)前記基板(1)よりも低いドーピング濃度を有する炭化ケイ素nドープドリフト層(2)を前記第2の主要側(16)とは反対側にエピタキシャル成長させ、前記炭化ケイ素基板(1)が配置される側とは反対側の前記ドリフト層(2)の側は、前記第1の主要側(14)を形成し、
c)最大終端層深さ(32)まで第2のイオンを注入し、前記第1の主要側(14)でアニーリングを行うことによって、少なくとも1つのpドープ終端層(3)を作製し、
d)前記第1の主要側(14)の下方のドーピング低減層(4)のドーピング濃度最小部(40)の深さから最大ドーピング低減層深さ(42)までのドーピング低減層深さ範囲(44)を有する(n−−)ドープドーピング低減層(46)を形成し、前記ドーピング低減層(4)のドーピング濃度最小部(40)の深さは、前記最大終端層深さ(32)よりも深く、前記ドーピング低減層(4)は、少なくとも1つのドーピング低減領域(46)を含み、各ドーピング低減領域(46)の作製のために、
少なくとも前記エッジ領域(12)における前記第1の主要側(14)に第1のイオンをある注入エネルギで注入し、前記第1のイオンは、前記第1の主要側(14)の下方の前記ドーピング低減領域のドーピング濃度最小部(460)の深さから最大ドーピング低減領域深さ(462)までのドーピング低減領域深さ範囲(464)に注入され、
前記第1のイオンおよび前記少なくとも1つの注入エネルギは、前記ドーピング低減層深さ範囲(44)が10μm未満であるように選択され、
e)前記ドーピング低減層(4)をアニーリングし、
ステップd)は、前記ドリフト層(2)の前記ドーピング濃度が前記ドーピング低減層(4)において低下するように実行される、方法。 - ステップd)において、少なくとも2つまたは3つ〜10または3つ〜6つの異なる注入エネルギで前記第1のイオンを注入することを特徴とする、請求項1に記載の方法。
- ステップd)において、異なる注入エネルギで複数のドーピング低減領域(46)を形成し、前記複数のドーピング低減領域(46)は、連続的なドーピング低減層(4)を形成するように互いに重なり合っていることを特徴とする、請求項1または2に記載の方法。
- ステップd)において、前記少なくとも1つの注入エネルギは、前記少なくとも1つのドーピング低減領域深さ範囲(464)が1μm未満または0.6μm未満または0.2〜0.5μmであるように選択されることを特徴とする、請求項1〜3のいずれか1項に記載の方法。
- 前記ドーピング低減層(4)における前記ドーピング濃度は、前記ドリフト層(2)の前記ドーピング濃度の25〜75%または40〜75%であることを特徴とする、請求項1〜4のいずれか1項に記載の方法。
- ステップd)において、前記第1のイオンが前記エッジ領域(12)にのみ適用されるように前記第1の主要側(14)の前記中央領域(10)上にマスク(5)またはマスク(5)としての金属電極(50)を適用することを特徴とする、請求項1〜5のいずれか1項に記載の方法。
- 前記第1のイオンは水素であり、100〜1000keVおよび300〜800keVの少なくとも1つの注入エネルギ、ならびに、5*109cm−2〜1*1014cm−2および1*1010cm−2〜1*1013cm−2の注入ドーズ量で前記第1のイオンを注入することを特徴とする、請求項1〜6のいずれか1項に記載の方法。
- 前記第1のイオンはヘリウムであり、500〜2500keVおよび300〜1500keVの少なくとも1つの注入エネルギ、ならびに、3*109cm−2〜1*1013cm−2または5*109cm−2〜1*1012cm−2の注入ドーズ量で前記第1のイオンを注入することを特徴とする、請求項1〜6のいずれか1項に記載の方法。
- 前記エッジ領域(12)における前記第1の主要側(14)に、前記少なくとも1つの終端層(3)を作製し、前記少なくとも1つの終端層(3)は、
接合終端拡張部(36)、
1つのガードリング、および
互いを取り囲み、前記ドリフト層(2)によって互いから分離されている少なくとも2つまたは少なくとも5つまたは少なくとも10のガードリング(38)、のうちの少なくとも1つであることを特徴とする、請求項1〜8のいずれか1項に記載の方法。 - エッジ終端構造を有するパワー半導体デバイスを製造する方法であって、前記エッジ終端構造は、請求項1〜9のいずれか1項に従って製造される、方法。
- 第1の主要側(14)と前記第1の主要側(14)とは反対側の第2の主要側(16)との間に中央領域(10)とエッジ領域(12)とを有する炭化ケイ素パワー半導体デバイスであって、
前記第2の主要側(16)には、nドープ炭化ケイ素基板層(1)が配置され、
前記第1の主要側(14)には、前記炭化ケイ素基板層(1)よりも低くドープされたn−ドープ炭化ケイ素ドリフト層(2)が配置され、前記第1の主要側(14)の前記エッジ領域(10)には、少なくとも1つのpドープ終端層(3)と前記ドリフト層(2)よりも低いドーピング濃度を有する(n−−)ドープドーピング低減層(4)とが配置され、前記ドーピング低減層(4)は、前記第1の主要側(14)の下方の前記ドーピング低減層(4)のドーピング濃度最小部(40)の深さから最大ドーピング低減層深さ(42)までのドーピング低減層深さ範囲(44)に配置され、前記ドーピング低減層(4)の前記ドーピング濃度最小部(40)の前記深さは、最大終端層深さ(32)よりも深く、前記ドーピング低減層深さ範囲(44)は、10μm未満である、パワー半導体デバイス。 - 前記終端層(3)は、
接合終端拡張部(36)、
1つのガードリング、および
互いを取り囲み、前記ドリフト層(2)によって互いから分離されている少なくとも2つまたは少なくとも5つまたは少なくとも10のガードリング(38)、であることを特徴とする、請求項11に記載のパワー半導体デバイス。
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CN107482052B (zh) * | 2017-07-21 | 2021-01-29 | 泰科天润半导体科技(北京)有限公司 | 隐埋n型沟道的碳化硅功率器件及其制造方法 |
JP7248962B2 (ja) * | 2017-08-24 | 2023-03-30 | 株式会社Flosfia | 半導体装置 |
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JP2019054170A (ja) * | 2017-09-15 | 2019-04-04 | 株式会社東芝 | 半導体装置 |
US10615274B2 (en) * | 2017-12-21 | 2020-04-07 | Cree, Inc. | Vertical semiconductor device with improved ruggedness |
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